電阻漂移 的英文怎麼說

中文拼音 [diànzǔbiāoyí]
電阻漂移 英文
resistor drift
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  1. A serious problem with thermistors is that they tend to drift.

    熱能電阻的一個嚴重問題是容易漂移。
  2. In general, a precise resistor is in series with one of the resistors in wheatstone bridge to compensate the zero offset, and the other one is in parallel with another arm of the wheatstone bridge to compensate thermal zero drift. based on this principle, in this paper, a compensation method based on virtual instrument technology has been put forward. actuated by current source, a good calculation method of compensation resistors and their position in the bridge is deduced

    本文基於串並聯電阻補償法的原理，提出了一種基於虛擬儀器的誤差補償方案，推導了在恆流源供電下可以精確的計算出補償電阻大小和補償位置的演算法，並且在虛擬儀器軟體平臺labview上完成了數據採集、處理、顯示等軟體的設計，經過實驗的驗證，對傳感器的零點溫度漂移補償取得較好的效果，而對靈敏度溫度漂移的工藝補償亦有一定的效果。
  3. The models currently used are either modified from low voltage mos models or based on macro model of simple polynomial established dddmos drift region resistance, both of which are limited and cannot provide a globally accurate physical model

    業界目前使用的模型只是在低壓mos模型基礎上作一些修改，或者通過用簡單多項式的形式建立dddmos漂移區電阻的宏模型以建模。
  4. In the model of on - resistance, we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region. then we provide the explicit dependence between on - resistance and doping distribution parameter

    導通電阻模型考慮了ldmos的溝道橫向雜質分佈和漂移區雜質縱向分佈的結構特點，給出了導通電阻與雜質分佈參數的明確函數關系。
  5. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  6. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  7. The specific resistance change produces a zero shift.

    電阻的這一特殊變化造成零點漂移。
  8. The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer

    模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。
  9. The results show that the electron mean drift velocity is affected by the cathode radius, the impedance of the load diode, the inner radius of vanes and the input voltage

    結果表明電子平均漂移速度決定於陰極桿半徑、負載二極體阻抗、陽極慢波葉片內徑和輸入電壓。
  10. The basic principle, main properties, typical parameters, technical characteristics and general situation of klystron are introduced. the electron beam prebunching in the modulated cavity and shift tube of relativistic klystron amplifer ( rka ) is studied analytically, a self - consistent equation of radiation generated by the prebunched electron beam in the radiation cavity is derived using the field method of particle ? wave interaction instead of the electrical circuit method, and in terms of it, the gain in the linear regime calculated, a field analysis method is proposed. the theory analysis shows that the characteristic parameters, such as resonance frequency, real part of gap - impedance, external quality fadtor in all kinds of klystron output circuits including single - beam, multi - beam, single - gap, multi - gap, single - beammulti - gap, multi - beam multi - gap klystron output circuit, can be calculated by the field analysis method

    本文系統的介紹了速調管的工作原理、主要特點、發展概況、主要性能指標和技術特點，解析的研究了電子束在相對論速調管放大器的調制腔和漂移管中的預群聚;用粒子波互作用的場方法導出了在輻射腔中預群聚電子束產生輻射的自洽方程，同時對線性區的增益進行了計算。理論分析表明，場分析法可用於計算單注單間隙、多注多間隙、單注多間隙和多注多間隙速調管輸出迴路的諧振頻率、間隙阻抗實部和外觀品質因數等特性參數。
  11. The accurate calculation of the input voltage and the compensation for the dc - offset error and the variation of the stator resistance are important factors in practical implementation of the integration since they can cause a drift in the stator flux linkage trajectory and furthermore deteriorate the quality of torque control

    因此，輸入電壓的準確計算、直流漂移量的補償以及定子電阻變化的補償都是影響積分計算準確性的重要因素，這些誤差會導致定子磁鏈軌跡的偏移，進而降低系統轉矩控制的性能。
  12. A resolution method in software is applied to calibrate zero point and full scale of the circuit. software approach to nonlinear correction for sensor and circuit is presented. therefore system error is eliminated, and measurement accuracy of temperature is improved. the signal of acidity electrode is detected by a differential amplifier circuit, which consists of operational amplifiers tlc2254 with high input impedance and low drift

    採用橋路和單運放差動放大電路對溫度傳感器信號檢測放大，軟體校正溫度傳感器和測量電路的非線性，軟體校準測量電路的零點和滿度，消除測量電路的系統誤差，提高補償溫度的測量精度；採用高阻、低漂移運放tlc2254組成高阻差動放大電路用於酸度電極信號測量。
  13. Pic simulations are performed to determine gap scaling in a high density pegs. comparisons of simulation results with simply theory results and experiment results, indicate that the pegs gap is always equal to the critical gap for magnetic insulted electron flow. it is important to note that, the vacuum electron flow to the anode causes current loss and the

    另外，根據模擬結果還得到了兩個重要結論：電流損失是由真空漂移電子的出現所造成的，電流損失的大小與負載阻抗成近似正比關系；負載阻抗等於peos的流阻抗時，負載獲得功率最大。
  14. Firstly, the temperature varies in a large range in the place where the gap sensor works, so this paper analyzes the temperature drift of gap sensor, and finds out that the main reasons which result in temperature drift are the resistance of detecting coil and demodulating circuit parameters. to resolve this problem, a practical design of detecting coil is given, and a compensative measure considering the detecting coil and demodulation circuit is proposed to improve the temperature stability of gap sensor

    首先，針對間隙傳感器工作環境溫度變化較大的情況，本文對間隙傳感器溫度漂移現象進行了分析，認為檢測線圈電阻和檢波電路參數變化是造成傳感器溫漂的主要原因，建立了檢測線圈的數學模型，提出了檢測線圈和檢波電路綜合補償方法，解決了間隙傳感器的輸出信號溫度穩定性的問題。
  15. Specific issues examined are : compensation for the variation of the stator resistance, the offset error of the dc bus voltage, the voltage error generated by the forward voltage drop the dead time of the switches, improvement of the steady state performance, and the speed sensorless control for the pmsm dtc drive system are of major concern in this thesis

    定子電阻變化，直流母線電壓漂移，開關器件反向相電壓降、逆變器死區時間引起的電壓誤差的補償，提高系統穩態運行性能以及永磁同步電機直接轉矩控制的無速度傳感器運行方案等問題都是本文研究的重點。轉矩的快速響應是直接轉矩控制演算法的一個卓越的性能。
  16. The sensor offset is governed by its thermal drift, electric drift and time drift, so eliminating the offset thermal drift in the measurement of sensor needs to keep the values of resistance and temperature coefficient for different resistor strips to be equal each other

    壓力傳感器的零點存在熱漂移、電漂移和時間漂移，減小壓力傳感器的熱零點漂移的措施是各力敏電阻的電阻值及其溫度系數的相等性。
  17. The sensor offset is governed by its thermal drift, electric drift and time drift, so eliminating the offset thermal drift in the measurement of sensors requires to keep the values of resistance and temperature coefficient for different resistor strips to be equal each other

    壓力傳感器的零點存在熱漂移、電漂移和時間漂移，減小壓力傳感器的熱零點漂移的措施是各力敏電阻的電阻值及其溫度系數的相等性。
  18. The traditional level measuring methods can n ' t meet our demand because the subjective investigated is in such a poor systemic condition that the temperature is a little high and there ' s so many mill dust and steam there. in this article we perform systemic discuss and research against the dynamic level measuring method under special working condition on the basis of analyzing kinds of level measuring technique in and abroad. first we establish the pressure distribution mathematic model in storage bin and then deduce the mathematic relation between level height and the uniform stress on the bottom of the bin and designed a resistance compressive stress sensor used for the special condition and put forward a resoivement according to its zero excursion existing in practical use

    由於本研究系統被測對象環境溫度較高且潮濕，同時料倉中有大量粉塵及蒸汽，因此傳統的料位檢測方法不能滿足本測試要求。本文在分析國內外各種物位檢測技術的基礎上，針對特殊工況下動態物料高度的檢測進行了系統的探討與研究。首先建立了料倉中的壓力分佈數學模型，推導出料位高度與倉底均布壓力間的數學關系式，並據此設計了中溫電阻應變式壓力傳感器，同時對它在實際應用中存在的零點漂移等問題提出了改進措施，提高了傳感器性能，解決了上述特殊工況下動態物料檢測的技術難題。
  19. Both ends of the shield are a " floating " ground in most cases, and this creates a complex circuit network consisting of the complex impedance to ground of the output circuit at one end, the complex input circuit impedance at the other end, and the resistance, capacitance, and inductance of the cable in between

    大多數情況下屏蔽線兩端是「漂移」的接地端，這就形成了復雜的電路，這個電路的一端相對輸出端的接地點有復雜的阻抗，另一端又有復雜的輸入阻抗以及連接線的電阻，電容和電感。
  20. Glasses and pastes comprising influence on components resistance fluctuating was studied, and least shift rate of resistance is 0. 9 % for 1m chip resistor with no. 4 glass component

    分析了玻璃組成和漿料配方對元件電阻值漂移的影響，並對其保護機理進行了探討。
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