電阻率分佈 的英文怎麼說
中文拼音 [diànzǔlǜfēnbù]
電阻率分佈
英文
resistivity distribution- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 阻 : 動詞(阻擋; 阻礙) block; hinder; impede; obstruct
- 率 : 率名詞(比值) rate; ratio; proportion
- 分 : 分Ⅰ名詞1. (成分) component 2. (職責和權利的限度) what is within one's duty or rights Ⅱ同 「份」Ⅲ動詞[書面語] (料想) judge
- 電阻 : (物質阻礙電流通過的性質) resistance; electric resistance (電路中兩點間在一定壓力下決定電流強度...
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For this purpos, from the point of the log geology, aimed at the actuality of the current fractured reservoir log geology interpretation and evaluation, based on synthetical analysis of the current domestic and foreign fruit of fractal dimension investigation of reservoir fracture, using the method and technique of fractal dimension, through the further discussion of the fractal dimension characteristics of m index and n index in the log interpretation archie model in a sample way and through the theoretic reasoning to the fractal dimension dfa and m index of fractured reservoir interval ' s log curve, according to the geophysical signification of the fractal dimension dfa of fractured reservoir interval ' s log curve shape : the more complicated the change of the curve shape is, the larger the its dfa value is, then the more complicated space structure of fracture and pore, then the higher value of m index of space structure of fracture and pore, and so on, the text propounds an improved method, based on box dimension, of covering log curve with scale grid, and by programming computes the dfa and its m index value of fractured reservoir interval ' s log curve, for instance, ac and rt curve, ect, then further puts this technique into application investigation, and makes analysis of application effects in the reservoirs located in l area of qx oil field from three aspects : 1. the dfa and its m index value of fractured reservoir interval ' s log curve, for instance, ac and rt curve, ect, which are derived from computing, is used to identify reservoir type by crossplotting m index with the product df _ acrt of fractal dimension of acoustical wave log curve and restivity log curve and by experiential discriminance plate of reservoir type in l area of qx oil field
因此,對該區裂縫性儲集層的類型識別、孔滲特徵的測井地質解釋以及儲層裂縫的發育和分佈規律進行深入的研究便成為本文研究的出發點。為此,本文從測井地質的角度,針對當前裂縫性儲層測井地質解釋與評價的現狀,在綜合分析當前國內外儲層裂縫的分形分維研究成果的基礎上,利用分形分維方法和技術,通過對archie測井解釋模型中的m指數、 n指數的分形分維特性的深入淺出的論述以及裂縫性儲層段測井曲線分維d _ ( fa )與m指數的理論推導,根據裂縫性儲層測井曲線形態分維值的地球物理意義? ?曲線變化越復雜,則其分維值d _ ( fa )越大、裂縫孔隙空間結構越復雜、裂縫孔隙空間結構指數m值越高等特徵,提出了改進的基於盒維數的測井曲線網格覆蓋法,編程計算了裂縫性儲層段常規測井曲線(如聲波和電阻率曲線)上分形分維值及其m指數值,進而從以下三個方面對qx油田l區塊的裂縫油藏進行應用研究,效果十分理想: 1將計算得到的可變的m指數與聲波和電阻率分維之積df _ acrt進行交繪,採用儲層分維值分類技術統計分析這些參數變化的規律,並結合qx油田l區塊儲層類型經驗判別圖版,從而實現qx油田l區塊下白堊統的裂縫性儲層的類型識別。The le - an oil field is located on the southern slope of dong - ying sag. there are two sets of ek basalt in its western block. depending on the drilling, the logging and the seismic date, tha ek basalt has the characteristics of high resistancs, the low sound wave defferance and faradic conductance, the smooth curve of self potential
樂安油田位於東營窪陷南斜坡上,其西區發育了兩套孔店組玄武巖,根據鉆井、測井、地震資料,孔店組玄武巖具有電阻率高、聲波時差值和感應電導率值低、自然電位曲線平直的特點,地震波呈板狀強反射;沉積期該區有有二次火山活動,玄武巖平面分佈比較穩定,噴發方式為「裂隙式噴溢」 ,火山口分別位於草12和草31井附近。The processing and graphical representation of aeroelectromagnetic data of over 30000 traverse kilometers demonstrate the effectiveness of the techniques, and the apparent resistivity images obtained reflect characteristics of shallow electric distrbution, thus providing new data for geological mapping
通過對3萬多測線公里航空電磁數據的處理與圖示,證明了方法的有效性,取得的視電阻率圖像反映了各測區淺層電性分佈特徵,為地質填圖提供了新的數據。A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一個價帶附近的界面態分佈模型,用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線;分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響;論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性,分別模擬了室溫下和300時sicpmos器件的輸出特性,分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。It creates the model of layer soil by using the cdegs software, analyses the resistance error which is measured by traditional three - poles way, measures the grounding grids resistance and soil resistance rate of hejin power plant, creates the electromagnetic model of layer soil and grounding grids model of hejin power plant, calculates the step voltage > touch voltage n voltage distribution of earth surface in fault of hejin power plant. in the end, it compares the measuring value and calculating value of grounding grids resistance in hejin power plant
本文利用cdegs軟體建立分層土壤接地模型,對傳統三極法測量接地電阻誤差進行分析;對河津電廠接地網接地電阻和土壤電阻率進行測量;建立河津電廠分層土壤電磁模型和接地網模型;計算河津電廠接地網電阻和事故狀態下跨步電壓、接觸電壓和地表電位分佈;最後對河津電廠接地網電阻實測值與計算值進行比較分析。And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown
而計算分析和二維數值模擬分析結果表明:梳狀集電結(基區)結構在不增加器件本徵集電結面積的條件下,增大了器件的本徵散熱面積和基區周長,改進了每個子器件單元內的散熱方式,提高了單元內結溫和電流分佈的均勻性,降低了器件的熱阻,增大了器件的耗散功率和輸出功率,較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾,並有利於改善器件抗二次擊穿的性能。With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon
隨著單晶生長技術的發展,通過退火,由於si - gaas中理論化學配比偏離, el2濃度可被控制在1 1 . 5 10 ~ ( 16 ) cm ~ ( - 3 ) ,且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以,研究碳微區均勻性就顯得非常重要。The simulated results indicate that the non - uniformity is further intensified due to the bitumen sand base ; soil resistivity in the position where auxiliary anodes are placed has significant effect on potential distribution ; there is a buried depth of anode for optimal potential distribution under different geological conditions
結果表明:罐底瀝青砂基礎會加大電位分佈的不均勻性;陽極理深處的土壤電阻率時整個罐底的電位均有顯著影響;在不同地質條件下進行深井陽極保護時,存在一個使電位分佈效果最佳的陽極埋深點。By analyzing parameters of the model, we find out that shale distribution largely affects water saturation calculated by the model, the less the resistivities of sand grains or clay grains, the more largely the resistivities of grains affect the relation between ct and swt, the effect of m on the relation between ct and swt is increased with swt
通過對該模型的影響因素分析,發現泥質分佈形式對模型計算的含水飽和度有很大影響;砂巖顆粒或粘土顆粒的電阻率越小,顆粒電阻率對c _ t與sw關系影響越大; m ( m = n )對c _ t與s _ ( wt )關系曲線的影響隨s _ ( wt )的增大而增大。This dessertation systematically researched dislocation and ab microdefects etched by molten koh and by ab etching respectively in gaas substrate, which were provided by merchants from home and overseas, as well as their influence on electrical parameters
本文系統地研究了國內外各生產廠家提供的gaas襯底中用熔融koh腐蝕的位錯、 ab腐蝕液腐蝕出的ab微缺陷的密度和分佈情況以及它們對襯底電參數(電阻率、遷移率、載流子濃度)的影響。The doping of in of cdznte wafers was also achieved through annealing by adding in in the annealing sources. the specific parameters were established according to the thermodynamic principles of multi - component system. the properties of the wafers, including composition distribution, optical and electronical properties, were tested before and after annealing
將退火與摻雜過程結合起來,根據多組分熱力學原理制定了退火摻雜的工藝參數,對比研究了摻雜退火前後成分分佈、 in摻入量、紅外透過率以及電阻率的變化情況。Fem simulating logging with axial - symmetric resistivity distribution
電性軸對稱分佈電阻率測井的有限元法模擬The effect of soil resistivity on cathodic protection potential distribution outside of tank bottom
土壤電阻率對罐底外側陰極保護電位分佈的影響The effect of soil resistivity change along vertical direction on potential distribution was studied through numerical simulation
利用數值模擬方法研究了罐底土壤電阻率沿垂直方向變化對電位分佈的影響。Based the basic principle of the accumulation of induced electric charges across the resistivity discontinuities and the induction current channeling inside the conductive bodies inspirited by the mt field, we set up the relation between the measured field on the earth surface and the distribution of the induced source underground by means of the defining the electric charge occurrence probability function and the electric dipole occurrence probability function and the spacial distributing of the " correlation probability ". the " image " of the field sources underground, or the distributing graphy of the induced electric charges and the induced current in the mesuring area can be drawed, from which we can get the outline of the geological anomaly on the meaning of the probability
大地電磁場概率成像方法是一種新的地球物理成像反演方法,它是根據在大電磁波場的激勵下,地下介質電阻率間斷處產生感應電荷積累和導體內部產生感應電流,從而產生感應電磁場的原理,相應地定義了感應電荷發生概率函數和感應電偶極子發生概率函數,通過「相關概率」發生的大小的空間分佈,建立了地表觀測場與地下場源空間分佈的內在聯系。地下場源分佈概率的「像」 ,即測區的感應電荷和感應電流的概率的分布圖像,就是測區內地質體在概率意義下地質異常體的分佈輪廓。The forward calculation shown that when providing current through whole casing pipe, the electrical potential on surface is mainly effected by shallow resistivity anomaly, whereas when providing current only at gun perforation position, the electrical potential is on surface mainly effected by corresponding resistivity of gun perforation position
正演結果表明:在全井套管供電時,地表觀測電位主要受淺層電阻率不均勻性的影響;在射孔段供電時,地表觀測電位主要反映射孔段的電阻率分佈。By measuring the resistance ratio, level construction and distribution of the organic film, explain the electronic and optical property of the device. wu caiyun directed by fan shuping and zhou yongdong
同時測試了有機層膜的電阻率參數,研究了有機層能級結構和分佈等這些物理量與器件的電學性能和光學性能間的關系。In inverse problem of ert, the linear back projection algorithm based on sensitivity field is used to reconstruct the qualitative image. assume that the change of conductance is slight, so the sensitivity can be approximately
在電阻層析成像的成像演算法方面,論文中使用了基於敏感場的線性反投影演算法,假設電導率分佈的變化不是很大,則場內敏感場系數的分佈可近似的認為不變,這樣就可利用敏感場矩陣直接求取多幅圖像。According to basic theories for distributing regular of electric field about surface single spot current source and high density resistivity prospecting method in this paper. put forward an installation which use one current electrode or dipole current electrodes and the others prospecting at the same time to realize high density resistivity method by office date processing, such as wenner pole - dipole a, wenner pole - dipole b, wenner alpha, wenner beta, wenner gamma and pole - pole array
摘要運用地面點電流源電場的分佈規律和高密度電阻率法的基本思想,提出了分別利用單極供電、偶極子供電,其餘電極同時測量,通過室內數據整理實現高密度電阻率法的溫納對稱四機、溫納偶極、溫納微分、溫納三極a 、溫極三極b和二極等裝置。The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab - epd in gaas substrate was not uniform ; secondly, the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly, mesfet devices performance correlated with ab microdefects ; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices
實驗結果表明, lecsi - gaas的電阻率、遷移率、載流子濃度、位錯密度和ab微缺陷分佈都不是均勻的,且電參數的分佈與ab - epd 、位錯密度分佈有關。製作的mesfet器件的性能參數分佈與ab微缺陷有明顯聯系。從plmapping測量結果可以看出材料的襯底參數好,則pl譜的強度高, pl譜均勻性也好,器件參數也好,就有可能製作出良好的器件與電路。分享友人