電離層頂 的英文怎麼說

中文拼音 [diànlícéngdǐng]
電離層頂 英文
ionopause
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  • 頂 : i 名詞（人體或物體的最上部） crown; peak; top Ⅱ動詞1 （用頭支承） carry on the head 2 （從下面拱...
  1. In section one, by using fice scheme and time - gcm, a model of trace gases and oh airglow affected by gravity wave is set up, then the propagation of nonlinear gravity wave and the effect on trace gases and oh airglow are analyzed. the result shows gravity wave excited by tropospause forcing can propagate stably to the mesosphere through the stratosphere so that energy and momentum can be transferred from one region to another. in this process, gravity wave undergoes growth, overturning, convection and breaking

    在第一部分的工作中，利用全隱歐拉格式和全球熱層-電離層-中間層-電動力學環流耦合模式（ time - gcm ） ，對重力波的非線性傳播及其在傳播過程中對中高層大氣中氧族和氫族成分和與之密切相關的oh氣輝輻射的影響進行了數值模擬，結果表明，從對流層向上傳播的重力波經歷了產生、發展、飽和、對流產生直至破碎的非線性演化，大氣的非等溫結構加速了重力波在中層頂區的破碎，重力波的非線性傳播是小尺度對流和湍流產生的一個重要的源。
  2. According to the present status of studying the solar flare using gps, a new algorithm of processing gps data studying the solar flare is brought forward : after the instrumental bias has been determined, with the data of dual - frequency gps code and phase and navigation message, the vtec at the satellite ' s epp can be worked out

    根據現在研究太陽耀斑的實際情況，提出了利用gps研究太陽耀斑的數據處理方法：利用雙頻觀測值確定出儀器偏差后，再利用碼和相位觀測值，結合導航電文就可以求出電離層交叉點的沿天頂方向上的電子總量vtec值。
  3. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  4. After optimizing the epitaixal condition, low temperature bonding, splitting and removing of porous silicon, soi material has been successfully fabricated for the first time in china with the epitaxial layer transfer of porous silicon ( eltran ) the eltran - soi has been characterized and the results indicate that the top si layer is perfect single crystal, and its thickness is uniform

    優化了外延條件，結合低溫鍵合與多孔硅的剝離技術，在國內首次用多孔硅外延層轉移技術成功地制備出了soi材料。分析表明， eltran - soi的頂層硅厚度均勻，單晶質量優良；界面清晰、陡直；電學特性優異。
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