非結晶碳 的英文怎麼說

中文拼音 [fēijiējīngtàn]
非結晶碳 英文
agraphitic carbon
  • : Ⅰ名詞1 (錯誤) mistake; wrong; errors 2 (指非洲) short for africa 3 (姓氏) a surname Ⅱ動詞1 ...
  • : 結動詞(長出果實或種子) bear (fruit); form (seed)
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 名詞[化學] (非金屬元素) carbon (c)
  • 結晶 : 1 (析出晶體) crystallize2 (晶體) crystal 3 (成果) crystallization; fruit; product; quintess...
  1. It is shown from results that increasing carburizing time further in the normal technology can not obviously deep the carburizing layer, but can cause nonmartensite microstructure at the bottom of the gear and coarse grain across the gear, these will heavily decrease the fatigue life of the gear

    果表明:在正常滲淬火工藝基礎上再延長滲淬火1小時,齒輪滲層深度變化不大,但其齒根局部表面處有馬組織,且粒尺寸易產生異常長大現象,從而致使臺架疲勞壽命明顯下降。
  2. In addition, it is generally accepted that the compensation of carbon acceptor by el2 donors is a main factor, which determines the semi - insulation property of undoped lec si - gaas single crystal

    另外,目前普遍認為摻si - gaas單的半絕緣特性是淺受主和深施主el2相互補償的果。
  3. The main research progresses of this thesis are shown as follow : 1. the a - c films with notably different surface micro - morphology were successfully fabricated by adjusting the sputtering process. there features change from smooth to a fractal - like structure with abounding holes and complicated gofers

    本論文的主要的研究工作進展如下: 1 .通過調控濺射工藝成功制備具有顯著差異的表面形貌的薄膜,其表面特徵為從光滑平坦過渡到具有豐富的孔隙和極其復雜的皺褶的分形構。
  4. Non - isothermal crystallization kinetics of poly dodecamethylene dicarboxydiphenyl sulfone amides

    聚聯苯碸二甲酰十二二胺的等溫動力學
  5. Apart from geochemists from western countries, which paid a particular attention on amorphous iron - manganese oxides extracted by enzyme or 0. 1 ~ 0. 25m nh2oh ? hc1, our results show that the extraction of metals adsorbed by clay and bound to the carbonate in soil is most useful to identify the concealed mineralizations in the semiarid and loess covered terrains, northern china

    但與國外重點關注質鐵錳氧化物如酶、鹽酸羥氨提取果不同,在我國北方半乾旱黃土覆蓋景觀區,粘土吸附和酸鹽合態金屬元素的提取為最有效的提取步驟。而游離態、有機合態的提取效果則受景觀控制變化較大。
  6. Finally, some efforts were employed to eliminate the support al2o3, which is very difficult to remove after the crystallization of al2o3 during the synthesis process. it is proved that hydrothermal process is an effective method to remove al2o3

    由於a12o :在管生長期間從變為體,十分難去除,因而提純過程相對復雜,最終果顯示水熱法對氧化鋁的去除是比較有效的,可作為進一步優化提純的基礎。
  7. Especially, it also registered a lower wear rate of the polymer counterpart compared with ti6a14v alloy. the worn surfaces of the tested samples were observed with a scanning electron microscope, as an effort to analyze the wear mechanisms

    Dlc膜的減摩機理與其表面高硬度含氫構和成分有關,磨損形式主要是輕微的磨粒磨損。
  8. The seemingly mcnt content in pt can be controlled by repeating the coatings of the film and increasing the mcnt doped concentration of the sol. the heterogeneous nucleation at the interface between mcnt and pt was induced by the doption of mcnt. the films which were calcined at 500 ? had formed perovskite and large crystal content, means that perovskite formed at the lower temperature, in conclusion, the crystalline ability of pt was improved by the doption of tb and mcnt

    納米管的引入,使得體系在納米管和pt之間的界面產生均態核化,隨pt薄膜成核勢壘的降低,摻納米管的pt薄膜在較低溫度下即可形成鈣鈦礦相,在500的較低溫度,就可獲得完整且己具有很大量的薄膜。
  9. The results show that amorphous carbon films have high etching resistance against oxygen plasma, and etch rates of the films correlated not only with etching processing parameters, also with deposition conditions

    果表明膜對于氧離子體具有高的抗刻蝕性,其刻蝕率不僅與刻蝕的過程參量有關,而且決定於膜的沉積條件。
  10. Structure and properties of ta - c films deposited by filtered cathodic vacuum arc technology as a function of substrate bias

    襯底偏壓對四面體構和性能的影響
  11. An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding

    根據熱解中間相、 cvi - pip系sic基體相的組織構成與外貌特徵,通過對熱解中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析,提出了基於層生長模式的緻密化過程理論,解釋了熱解中間相、 cvi - pip系sic基體相以及釘扎誘導構多重界面的形成: ( 1 )在1150下, cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積,以8f型? sic為主,同時還會有少量4h型? sic ,無游離si和游離c存在; ( 2 ) pip - sic亞基體相由態sic以及彌散分佈的- sic微、 si - o - c和游離c組成; ( 3 )熱解中間相與纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎構過渡界面, pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導構過渡界面。
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