飽和延遲時間 的英文怎麼說

中文拼音 [bǎohéyánchíshíjiān]
飽和延遲時間 英文
saturation delay time
  • 飽 : Ⅰ形容詞1 （吃足） have eaten one s fill; be full 2 （充實; 飽滿） full; plump Ⅱ副詞（充足; 充分）...
  • 和 : 和動詞（在粉狀物中加液體攪拌或揉弄使有黏性） mix （powder） with water, etc. : 和點兒灰泥 prepare some plaster
  • 遲 : Ⅰ形容詞1. （緩慢） slow; tardy; dilatory 2. （晚） late; delayed 3. （遲鈍） slow; obtuseⅡ名詞（姓氏） a surname
  • 時 : shí］Ⅰ名1 （比較長的一段時間）time; times; days:當時at that time; in those days; 古時 ancient tim...
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 飽和 : （在一定溫度壓力下, 溶液可含溶質的量達到最大限度, 不能再溶解, 泛指事物達到最高限度） saturation; saturated
  • 時間 : time; hour; 北京時間十九點整19 hours beijing time; 上課時間school hours; 時間與空間 time and spac...
  1. Time delay was chosen by using autocorrelation function method and mutual information method, while reconstruct dimension was obtained by g - p saturation correlation dimension method and false nearest neighbor percentage method. furthermore, initial neighborhood radius was computed by the estimated noise level based on the g - p saturation correlation dimension method. secondly, a noise reduction of the inflow time series was carried out by chaotic nonlinear local projection noise reduction method, and the effects on noise to chaotic characteristics and state reconstruction parameters were discussed

    採用g - p關聯維法計算關聯維數； rosenstein法和kantz法計算最大lyapunov指數；重構相空間的延遲時間採用了自相關函數法和互信息量法；嵌入維數採用了飽和關聯維法和偽鄰近點法；初始領域半徑的選取採用了基於g - p關聯維法的噪聲水平的初始估計方法。
  2. Also, the degradations of n - mosfet and p - mosfet are compared and the increase of delay - time induced by device degradation is represented by introducing " time - index ", and the saturation effect and temperature characteristics of device degradation are described

    另外，比較討論了p溝和n溝mosfet的退化，對器件退化導致的電路延遲增加則引入了「時間因子」的概念來加以明確的表徵；對器件退化的飽和效應和溫度特性也作了分析概述。
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