高溫等離子體 的英文怎麼說

中文拼音 [gāowēnděnglízitǐ]
高溫等離子體 英文
high-temperature piston
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 溫 : Ⅰ形容詞（不冷不熱） warm; lukewarm; hot; gentle; mild Ⅱ名詞1 （溫度） temperature 2 （瘟） acute ...
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 體 : 體構詞成分。
  • 高溫 : high temperature; elevated temperature; hyperthermia; megatemperature; inferno
  • 離子 : [物理學] ion
  1. Plasma cyro - etching of high aspect ratio silicon crystal structures

    等離子體低溫刻蝕單晶硅高深寬比結構
  2. The direct application of eftl is flat panel displays. it has several preferences, emissive, wide view angle, quick response, wide working temperature range, high pixel resolution, anti - strike, long life, less number of fabrication process etc. all these properties are better than plasma display fed and lc

    它的主動顯示、平板化、視角大、反應快、工作溫度范圍寬、像素鑒別率高、抗震動、壽命長、工序少等特點，都勝過液晶、等離子體、 lc等顯示技術：第一章介紹了無機電致發光及有機電致發光的發展現狀和存在問題。
  3. Impulse heavy current technology, as one of the important researches of pulse power techniques, is also widely applied to technology of high - temperature plasma, strong magnetic field, mechanics effects and so on

    沖擊大電流技術是脈沖功率技術的重要研究內容之一，廣泛的用於高溫等離子體、強磁場、力學效應等研究領域。
  4. Al - doped zno thin films are emerging as an alternative potential candidate for ito flims recently. al doped zno thin films also can obtain a tunable band gap. especially, zno : al thin films with high c - axis orientated crystalline structure along ( 002 ) plane are potential device applications in broadband ultra - violet

    Al摻雜的zno薄膜不僅具有與傳統ito薄膜相比擬的光電性質，而且原材料豐富、價格低、無毒、沉積溫度低、熱穩定性高，在氫等離子體環境中具有很高的化學穩定性，不易導致太陽能電池材料活性降低。
  5. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  6. By film thickness measured, fourier transformed infrared spectrometer ( ftir ) analysis, x - ray photoelectron spectroscopy ( xps ) analysis and relative irradiance measurement, the effect of microwave input powers on deposition rates, f / c ratios, bonding configurations of ct - c : f films and the radicals in plasma originating from source gases dissociation is analyzed

    由於微波功率的改變會導致等離子體中電子溫度和等離子體密度發生變化，從而造成不同的源氣體分解過程，結果微波功率的升高導致了薄膜沉積速率的提高、 f / c比的降低，同時也導致薄膜中cf和cf _ 3基團密度的降低，而保持cf _ 2基團密度接近常數。
  7. Spectral line shifts of h - like neon in hot and dense plasmas

    類氫氖在高溫高密度等離子體中的光譜漂移
  8. In the thermal fusion device, the materials of the plasma facing components are expected to have high thermal resistance and outstanding heat conductivity. using a single kind of material, however, can not meet the above two requirements at one time. therefore, the joining technique is regarded as a proper approach to improve the properties of the conventional materials

    在熱核聚變反應裝置中關鍵結構件「面向等離子體」元件要求材料具備良好的耐高溫性和導熱性，而現有的單一材料不能同時滿足該要求，因此，通過連接技術將現有材料進行改善是合適的。
  9. This paper studies the application of inductively coupled plasma ( icp ) technology to the etching compound semiconductor insb - in film. by means of single probe and double probe, the ion density and electron temperature of chamber ( 30mm and 50mm in height respectively ) under varied process condition were diagnosed. the spatial distribution of the axial position of the two parameters and the varied curve that the two parameters varies with the power and air pressure are obtained

    利用單探針和雙探針診斷30mm高反應室和50mm高反應室在各種工藝條件下的離子密度和電子溫度，得到這兩個參數在反應室軸向位置的空間分佈、隨功率和氣壓的變化曲線、頂蓋接地和反應室體積對它們的影響，結果表明離子密度為10 ~ 8 10 ~ （ 10 ） cm ~ （ - 3 ） ，電子溫度在4 10ev之間；當頂蓋接地時，該處的等離子體密度明顯大於不接地；在同樣條件下， 50mm高反應室內的離子密度明顯大於30mm高反應室。
  10. The main research contents of the technical design include : analyzing the necessary parts of the solar x - euv telescope and the method of imaging x and euv ray ; developing the optic, electronic and mechanical design of this instrument ; computing solar x - euv imaging telescope ' s response to different temperature plasma, analyzing combination application of telescope filters for reconstructing the plasma paramaters and apprasing the telescope ' s response to the solar activities

    技術設計的主要內容包括：分析瞭望遠鏡的系統組成及成像方式選擇；完成太陽x - euv成像望遠鏡光學、電子學、機械等方面的技術設計：計算分析了太陽x - euv成像望遠鏡對不同溫度的等離子體響應、反演高低溫等離子體參數的最佳過濾片組合利用及望遠鏡對不同太陽活動現象的響應。
  11. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  12. The result shows that argon gas can not only promote the excitation of plasma at low pressure, but also improve discharge state, increase the density and activation of reaction radical and improve the quality of diamond films. on the other side, argon can cool the plasma and maintain low temperature of substrate due to its big ionization section and high collision probability with gas molecules

    結果表明，氣體系統中引入氬氣一方面不僅有利於維持低壓放電，而且改善放電狀態，提高反應活性基濃度和活性，提高低溫沉積金剛石膜的質量；另一方面，由於其大的電離截面使其和電子碰撞的幾率大大提高，對等離子體進行冷卻，有利於基片溫度的降低。
  13. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  14. This paper discusses the surface etching of polyester thread through application of plasma and alkali deweighting to enhance the size adhesion to polyester thread and improve the abrasion - resistance of the sized polyester thread

    摘要探索了應用堿減量、低溫等離子體處理方法對滌綸股線表面進行刻蝕處理，以改善上漿前滌綸表面界面，增強漿液對滌綸股線的黏附性，提高上漿后滌綸股線的耐磨性的研究。
  15. High temperature plasma dynamics

    高溫等離子體動力學
  16. With the furthermore development of ultra thin film technology, soft x - ray multilayer mirrors was applied in many fields, such as astronomy, microscope technology, euv lithogrphy, x - ray laser, icf diagnosis and so on

    隨著軟x射線超薄膜制備技術的不斷發展，軟x射線多層膜反射鏡已在多個領域中投入研究與應用，如天文學、生物醫學顯微鏡、極紫外投影光刻技術、 x射線激光、高溫等離子體診斷等等。
  17. Plasma / photocatalysis system which combines the advantage of non - thermal plasma with that of photocatalysis with synergetic effect is a high effective technology for decomposition of vocs with low energy consumption

    摘要低溫等離子體光催化協同凈化技術集成了低溫等離子體和光催化的優勢，兩者相互協同，優勢互補，是一種非常高效、節能的降解有機廢氣的方法。
  18. The poor adhesion of ultra - high molecular weight polyethylene fibres to epoxy resin due to the characteristics of their surface structure makes it difficult to develop light compsite materials with good mechanical properties

    給高性能輕型復合材料的研製帶來困難，本論文根據低溫等離子體在其表面處理的中所面臨的實際問題展開了深入的研究。
  19. Using the best parameters of the treatment, the treatment of the fibers surfaces show that the fibres can be wetted very well by resin, and that the adhesion strength of the treated fibres to resin increases significantly to 7. 4mpa

    2 ）通過優化參數的低溫等離子體表面處理后， uhmw - pe纖維與環氧樹脂界面粘接強度成倍提高，最優化參數條件下達到了7 4mpa 。
  20. High density non - thermal plasma generated by pulsed high - voltage discharge is a new advanced oxidative technology in water treatment, which combines electronic, chemical oxidation and light into one process to degrade organic substances in wastewater and kill bacteria

    摘要利用高壓脈沖放電在水中產生高密度的低溫等離子體來降解水中有機物、殺滅水中病毒細菌，是集電、化學氧化、光於一體的水處理高級氧化技術。
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