高能電子衍射 的英文怎麼說

中文拼音 [gāonéngdiànziyǎnshè]
高能電子衍射 英文
high energy electron diffraction
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 能 : 能名詞（姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 衍 : [書面語]Ⅰ動詞（開展; 發揮） spread out; develop; amplifyⅡ形容詞（多餘） redundant; superfluousⅢ名...
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 高能 : high energy高能等離子體 energetic plasma; 高能點火 [航空] high energy ignition; 高能電池（組） hi...
  • 電子 : [物理學] [電學] electron
  1. Pilsenite is a rare mineral and its information is deficient. the first found pilsenite in china is in gaozhuang, henan province. pilsenite, associated with pyrrhotite, pyrite, hessite, gold, produced in pyrrhotite - polymetallic stage. three bismuth - tellurides produced in gaozhuang are well concordant with the standard pilsenite in composition, and other three are different from any of known bismuth - tellurium minerals. single crystal diffraction were made on a larger mineral grain of pilsenite. au growth and decline together with bi and te in ores and wall - rocks, which suggests that bi and te play a important role in migration and enrichment of au

    經電子探針分析，高莊金礦有多種鉍碲化物，有三粒礦物的成分與標準葉碲鉍礦完全一致。對一較大顆粒的葉碲鉍礦做了單晶x射線衍射分析。 au與bi在礦石和圍巖中的含量呈共消長關系， te與bi可能對au ag的遷移富集起了重要作用。
  2. The composite roll of high speed steel has the synthetical life of over ten times more than traditional high cr cast iron roll. now the research and production of the high speed steel for roll are very drastic. in this thesis, the microstructure, heat treatment and performance of high speed steel fe - 2 % c - 4 % v - 4 % mo - 5 % cr - x % w ( wt ) are studied systematically by using metallograph, method of lattice, xrd, sem, eds and hardness

    本文利用金相法（包括黑白金相和彩色金相） 、 x射線衍射（ xrd ） 、掃描電子顯微鏡（ sem ） 、能譜（ eds ）及洛氏硬度分析儀等手段，對復合軋輥用高速鋼fe - 2 c - 4 v - 4 mo - 5 cr - x w （其它部分如未作特殊註明均為質量分數）合金系的顯微組織、熱處理工藝及性能進行了系統地分析。
  3. The epitaxial growths of ingaas / gaas / algaas fundamental material and the fabrication of 45 - deflector are extensively studied in our work. some measuring methods are used to evaluate the growth quality of our grown structure by pl, cv, x - ray double crystal diffraction, sem etc. property analysis are provided for it

    利用高能電子衍射、電化學c - v 、掃描電鏡（ sem ） 、 x射線雙晶衍射儀、光熒光譜儀（ pl ） 、原子力顯微鏡等多種方法對制備的器件進行了檢測，同時對實驗結果進行了必要的分析。
  4. Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or

    此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。
  5. High electron energy diffractometer hee

    高能電子衍射儀
  6. Effects of oxygen pressure on microstructure of lno conductive thin film has been studied by in situ reflection high energy diffraction ( rheed ) and ex situ x - ray photoelectron spectroscopy ( xps ). in the relatively low oxygen pressure, lno film displays spotty rheed pattern

    首先，通過原位高能電子衍射（ rheed ）及x光電子能譜（ xps ）研究了氧分壓對lno導電薄膜微結構的影響，並進一步提出了氧分壓對lno薄膜微結構的影響的機理。
  7. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  8. Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed

    本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。
  9. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  10. Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )

    通過矽片在800到1200各個溫度和各種氮氣氣氛下的氮化處理的實驗結果，報道了不同與其他研究者的氮化條件，矽片在氮氣保護的熱處理中的氮化條件為：高於1100的溫度和高純氮的氣氛條件，同時對該氮化硅薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧化性等測試和分析。
  11. The morphologies of powder were observed by using high - resolution transmission electron microscopy ( hrtem ) ; x - ray diffraction ( xrd ) pattern was used to analyze the phases of the powder ; energy dispersive x - ray spectroscopy ( edx ) was used to analyze the component of composite powder

    用高分辨電鏡觀察復合粉體的形貌，進行電子衍射分析；用d / 3ax3b型x射線衍射儀作復合粉體的物相分析；用pv9900型能譜儀作復合粉末的成分分析。
  12. At the s ame time, an exceptional structure has been found in the sample annealed for one hour at 800. it appears the single crystal lattice irradiated by high - energy electron beam within a few seconds and then becomes amorphous structure quickly

    同時在800退火1小時的薄膜中發現一種異常結構，在短時間高能電子束照射下呈現明晰的單晶衍射斑點，但時間一長，非晶化現象嚴重。
  13. Saed ( selected area electron diffraction ), hrem ( high resolution electron microscopy ) and eds ( energy dispersive spectrum ) experiments confirmed that both the porous layer and lamellar layer are composed of nano - crystalline ha ( hydroxyapatite )

    實驗中採用了選區電子衍射、高分辨觀察和x - ray能譜等實驗手段，分析了羥基磷灰石各層的形態、成分與微結構。
  14. More recent studies show nanowires products with narrow dismeter distribution around 5 - 10mn and lengths ranging from several hundred nanometers to several micrometers can be obtained if the mixture solution of naoh and koh was replaced by koh solution. the nanowires were analyzed by a range of methods including powder x - ray diffraction ( xrd ), high resolution electron microscopy ( hrem ), selected area electron diffraction ( saed ), electron energy loss spectroscopy ( eels ), xrd and hrem image simulations. the structure of nanowires is determinded to be of the type of k2ti6oi3

    利用x射線衍射（ xri ） ） 、高分辨電子顯微鏡（ hrtem ） 、選區電子衍射（ saed ） 、電子能量損失譜（ eels ）以及x射線衍射和高分辨像模擬等分析測試手段，初步分析了這種納米線的生長機理，探討了她的結構和光學性能，實驗結果顯示這種納米線具有kzti6o ; 3的結構，紫外一可見光吸收光譜顯示， kzti6ol3納米線禁帶寬度約為3 . 45ev 。
  15. The thesis mainly investigated the bati _ 4o _ 9 ( bt _ 4 ), which has the lowest dielectric loss in ba - ti system, and ( ba, sr ) tio _ 3, the a position substitute compound of batio _ 3. the dielectric properties of bt _ 4 / bst with different preparation way and different elements doping were investigated. a archimedes method, xrd, sem, impedance analyzer, network analyzer and hakki - coleman method were used to investigate the density, phase formation, microstructure, dielectric properties and doping mechanisms

    本論文以在ba - ti系中具有最低介電損耗的bati _ 4o _ 9 （ bt _ 4 ）高頻介質陶瓷和batio _ 3a位sr取代而得的（ ba ， sr ） tio _ 3 （ bst ）高頻介質陶瓷作為研究對象，對不同粉體制備方法制備的bt _ 4 / bst高頻電介質材料進行不同元素的摻雜，運用阿基米德方法， x射線衍射分析儀，掃描電子顯微鏡和阻抗分析儀，網路分析儀， hakki - coleman法等方法手段和測試儀器測試燒成樣品的密度，相組成情況，微觀結構和介電性能，探討造成介電性能起伏的形成機理。
  16. The relationship between sputtering conditions and the depositional speed shows : with working pressure 1. 2 pa, sputtering power 180w, the depositional speed of tio2 thin film is 40nm / h, and increases with the increasing of sputtering power. it can be also founded that the depositional speed is nearly proportional to the working pressure : within the range of 0. 3pa to 1. 6pa, the depositional speed increases linearly with the increase of ar pressure. with the enhancement of the substrate ' s temperature of sputtering or annealing, the resulted thin films show a tendency of decreasing in thickness, and increasing in refractivity

    本實驗是採用磁控濺射方法，在不同的溫度下制備了tio _ 2薄膜，並對薄膜進行了不同溫度和時間的退火處理，通過原子力顯微鏡（ afm ） 、 x射線衍射（ xrd ） 、掃描電鏡（ sem ）等檢測手段對薄膜的表面形貌和組成結構進行了分析，結果如下： （ 1 ）濺射工藝條件與薄膜沉積速度的關系表明：採用1 . 2pa工作氣壓， 180w的射頻功率tio _ 2薄膜的沉積速率為40nm h ，並隨射頻功率的增加而提高，呈近似的線性關系，在0 . 3pa 1 . 6pa氣壓范圍中，氬氣壓強升高沉積速率迅速增加，濺射溫度提高和退火處理能使薄膜的厚度減小和折射率提高。
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