高電阻半導體 的英文怎麼說

中文拼音 [gāodiànzǔbàndǎotǐ]
高電阻半導體 英文
high ohmic semiconductor
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 半 : Ⅰ數詞1 （二分之一） half 2 （在 中間的） in the middle; halfway 3 （比喻很少） very little; the l...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 體 : 體構詞成分。
  • 電阻 : （物質阻礙電流通過的性質） resistance; electric resistance （電路中兩點間在一定壓力下決定電流強度...
  1. It detailed analyzes the characteristics of symmetric semi - space, layered telluric medium of transient electromagnetic methods, deduces apparent resistivity ( ps ) formulae of earlier, later and whole stage channels, it also analyzes and deduces the tem response effect of local conductive body in high resistance medium and its apparent resistivity formula, inquires into the causing reason, distinguishing method and the way of eliminating or reducing its effect of tem additional effects

    第二章瞬變電磁法的理論基礎，較詳細地分析了均勻半空間、層狀大地瞬變電磁場的特徵，推導了早期、晚期及全期道視電阻率s公式；以及高阻圍巖中局部導電體的瞬變電磁響應和相應的s公式推導。
  2. Semiconductor integrated circuits. detail specification for type jf3140 and jf3140a bimos operational amplifiers with high input impedence

    半導體集成電路. jf3140 jf3140a型bimos高輸入阻抗運算放大器詳細規范
  3. The chip of microbridge structure thermocouple type microwave power sensor is designed by using seeback domino offect of thermocouple. ta2n of relatively low resistor - temperature coefficient and si of relatively high thermoelectric power seebeck coefficient are used as thermocouple materials in the chip

    微梁結構熱偶微波功率傳感器晶元就是利用熱偶的塞貝克效應設計的，晶元選擇具有低電阻溫度系數的ta2n和具有高熱電系數的半導體單晶si作為熱偶材料。
  4. Such a structure ? a semiconductor with a disk cut out of it, which squeezes the current through the two narrow channels of semiconductor ? has a much higher resistance than an uninterrupted slab of semiconductor ( which itself has higher resistance than a semiconductor with a disk of metal embedded in it )

    這種在半導體中挖個圓洞，把電流壓縮到兩旁狹窄通道的結構，其電阻比起沒有障礙的半導體薄片要大很多（不過後者的電阻又比有金屬圓盤的半導體來得高） 。
  5. Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )

    隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。
  6. Rf plasma system 9200 is a barrel - type batch stripping system with optional high temperature capabilities for photoresist removal, nitride etch, and other cleaning applications in semiconductor and mems fabs

    射頻等離子體9200是桶式爐脫模體，擁有可控制的高溫系統可去除光阻材料、氮化物蝕刻和半導體與微型機電系統等方面的清洗功能
  7. The high voltage windings is made by sectional aluminium foil with glass fiber and resin casting, the voltage between turns is very low, the partial discharge is very low, there is no cracking, since the expansion factor of conductor and insulation material is similar, it also has the advantages of no corrosion, no pollution, low losses, low noise level, anti - vibration, fire protection, maintenance free, long operating life and high reliability

    低壓繞組為銅箔繞制，半干nomex紙做層間和外層絕緣，經乾燥與銅箔固化為一體，散熱好強度高。高壓繞組為分段鋁箔繞制，玻璃絲網架環氧樹脂澆注，層間電壓低，局部放電小，導體和絕緣體膨脹系數相似，不裂壽命長無腐蝕無污染損耗小噪音低抗震阻燃免維護運行安全可靠。
  8. Since the company began to resrerch and make radiators in 80 ' s last century, domestically advanced production lines have been adopted in the production. we sim at 100 % conformity of heat impedance performance curve with the testing standards stipulated in st2564 - 85 standard book of " profiled material raditors " which is promulgated by ministry of electronic industry of people republec of china. the radiators are matching heat - radiating components for power semiconductors, generally can be applied to fields of large and small power appliances, hi heat current density utensils, whole - set apparatus, electuonics and electrical devices, etc

    本公司自八十年代初研製生產散熱器系列產品以來，採用國內最先進的生產流水線，工藝精湛，其熱阻特性曲線均按中華人民共和國電子工業部標準st2564 - 85 《型材散熱器》規定的檢測方法，百分之百達到設計要求，是功率半導體器件的配套散熱元件，運用於多種大、小功率電器熱流高密度、整機設備、電子，電器等領域。
  9. Four - point probe measurement technique is one of the most extensive means for examining the resistivity in the semiconductor industry. with continuous progress, semiconductor industry develops at a very fast speed, the integration level of ic becomes higher and higher. presently, the ic production is entering into the age of ulsi, then testings are more and more important

    四探針測試技術是半導體工業檢測電阻率時採用最為廣泛的測試手段之一。隨著時代的不斷進步，半導體產業飛速發展，以單晶矽片為襯底的集成電路集成度越來越高，目前正進入甚大規模集成電路（ ulsi ）時代，測試在整個集成電路生產過程中的地位越來越重要。
  10. However, the pure cdte films have high electrical resistivity and this is mighty unfavourable to improve the conversion efficiency of cdte solar energy cells, and the best way is to doping donor or acceptor in pure cdte films

    但本徵cdte薄膜均為高阻半導體，這對于提高cdte薄膜太陽能電池的光電轉換效率是極為不利的，要提高cdte薄膜的光電性能必須通過施主或受主的摻雜。
  11. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
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