高頻功率 的英文怎麼說
中文拼音 [gāobīngōnglǜ]
高頻功率
英文
high-frequency power-
With the development of power electronics technology and devices in recent years, instead of using the industrial frequency transformer to boost voltage, dc / dc high frequency converter achieves the function. the system has higher power density and conversion efficiency, and the size, weight, ac noise of which has been greatly reduced
近年來,隨著電力電子技術與器件的迅速發展,使用dc dc高頻變換技術代替工頻升壓,系統具有較高的功率密度與轉換效率,裝置體積、重量與交流噪聲大大減小。A high efficiency dual - band rf power amplifier has an output and / or input of a high frequency transistor well terminated at the second harmonic frequency for dual - band operation
本發明乃一種高效率雙頻射頻功率放大器,提供高頻電晶體的輸出端與?或輸入端于雙頻操作中有良好的二階諧波終止。Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized
文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示,該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值The enhancement of water wettability, better optical transparency, and higher wear resistance have been found after the samples were treated under high rf power, bias voltage and gas pressure conditions
在較高射頻功率、基板負偏壓、反應氣體壓強狀態下制備膜層的潤濕性、耐磨損性較好,而光學透過率較低。The predistortion, which aims at compensating for the nonlinear distortion caused by the power amplifier, has a good performance in eliminating the nonlinear distortion of am / am & am / pm, improving the aci and spectrum efficiency
預失真技術是針對射頻功率放大器非線性而提出的一種補償技術,可以有效消除由非線性造成的傳輸信號的幅度和相位失真,降低信號鄰道干擾( aci ) ,提高頻譜利用效率。High frequency high voltage power converter for electrostatic precipitator
靜電除塵用高頻高壓功率變換器The study of high - frequency power transformer
高頻功率變壓器研究Rules for capacitors ; part 10 : rules for high frequency power capacitors
電容器規范.第10部分:高頻功率電容器規范Semiconductor discrete devices. detail specification for type 3da89 high - frequency power transistor
半導體分立器件. 3da89型高頻功率晶體管詳細規范Semiconductor discrete device. detail specification for type 3da150 high frequency and power transistor
半導體分立器件. 3da150型高頻功率晶體管詳細規范This thesis pays more attention to the drive circuit of high frequency power mosfet, power regulation circuit and frequency - tracing circuit
本文主要研究高頻功率mosfet的驅動電路、頻率跟蹤電路以及功率調節電路。This thesis pays more attention to the hf mosfet drive circuit and characteristics of balancing parallel mosfets " currents in dynamic mode
本文主要研究高頻功率mosfet的驅動電路和在動態開關模式下的並聯均流特性。Firstly, the driving characteristics of high frequency power mosfet and parameter computation of drive circuit are introduced briefly. then the useful and reliable drive circuit is designed
首先簡要介紹了高頻功率mosfet的驅動特點以及驅動電路參數的計算,然後根據實際情況選擇並設計了實用可靠的驅動電路。As the great reform and progress in a lot of techniques have been made in the new generation of semiconductor high - frequency power amplifier, valve power amplifiers are replacing by complete solid - state high - frequency linear power amplifiers gradually
隨著新一代半導體高頻功率放大管的一些突破性變革和多種技術的推陳出新,電真空管功率放大器正在被全固態高頻線性功率放大器逐步取代。With the development of electronic technology in the field of high - frequency and high - power, power mosfet is gradually enhancing its important status in semiconductor apparatus and is being widely applied in power converters as switch. with the increasing of the operating frequency ( > 200khz ), the energy loss caused by parasitic capacitance will affect the efficiency of power transforming in converters. especially in the applications of high frequency power supply using mosfet as main devices ( the unit of frequency is mhz ), the energy loss caused by the switch process will badly affect its efficiency
隨著電力電子技術進一步向高頻的大功率用電領域發展,功率mosfet在各種電力半導體器件中的重要地位日益顯著,使用功率mosfet作為開關器件的功率轉換電路也日益增多,但隨著器件開關頻率的提高(大於200khz ) ,由器件極間電容引起的能量損耗將會影響到功率轉換電路的能量傳輸效率,特別是在以mosfet作為開關器件的高頻感應加熱電源中(工作頻率可達兆赫) , mosfet在開關過程中的能量損耗嚴重影響到電源的效率,因此如何減小開關器件的損耗提高高頻功率轉換線路的效率成為電力電子技術領域的重要研究課題之一。High frequency switching technique is becoming more popular in the power electronics area, the high frequency power transistors are applied in the buck - boost type chopper system. the characteristics of power mosfet and insulated gate bipolar transistors ( igbt ), some new kinds of power swithing devices, are deeply studied
高頻開關技術是當今電力電子技術發展的方向,本文研究的buck - boost斬波系統中採用了高頻功率器件,所以本文對新型開關器件? ?功率mos場效應管[ mosfet ]和絕緣門極晶體管[ igbt ]的特性進行了初步研究。The slow - wave structure ( sws ), as a key part of twt where the beam - wave interaction carries out for exciting microwave energy, determines its performance directly. with the development of techniques, novel slow - wave structures are needed to improve the performance of twt with higher power and wider bandwidth
隨著科技的發展,人們對行波管的性能提出了更高的要求,更高的功率和帶寬成為人們追求的目標,隨著微波管向更高的頻段發展,也要求有新型的慢波結構來提高行波管的性能。Because direct torque control requires very high performance of real - time, the popular microcomputer core dsp is used as controller in the design of hardware. its high speed of running is suitable for the experiment. in the main circuit, there is a highly integrated power element : ipm as inverter, which includes seven igbt, has high switch frequency and fault diagnosis function
在本控制系統的具體實現上,由於直接轉矩控制對實時性要求很高,因此在硬體方面,採用了目前比較流行的數字信號處理器( dsp )作為系統的控制器,其處理速度高的特點正好符合本實驗的需要:在主電路中,本系統使用了集成度高的功率器件:智能功率模塊( ipm ) ,作為逆變環節,其集成了七個igbt ,實現了高開關頻率逆變以及故障診斷的功能,從而使控制系統的體積大大縮小、控制更加靈活。Due to the direct torque control requires very high performance of real - time, the popular microcomputer core dsp is used as controller in the design of hardware. its high speed of running is suitable to the experiment. in the main circuit, there is a highly integrated power element : ipm as inverter, which includes seven igbt, has high switch frequency and fault diagnosis function
在本控制系統的具體實現上,由於直接轉矩控制對實時性要求很高,因此在硬體方面,本課題採用了目前比較流行的數字信號處理器( dsp )作為本實驗的控制器,其處理速度高的特點正好符合本實驗的需要;在主電路中,本系統使用了集成度高的功率器件:智能功率模塊( ipm ) ,作為逆變環節,其集成了七個igbt ,實現了高開關頻率逆變以及故障診斷的功能,從而使控制系統的體積大大縮小、控制更加靈活。In chapter three, based on the analysis of the restricted factor of high frequency and the latest research achievements, it puts forward and designs the integrity structure of phase shifting pwm soft switching high voltage invert power supply. the main circuit, driving circuit and high voltage high frequency transformer are discussed in detail in this chapter
在分析了限制逆變電源高頻化因素的基礎上,綜合了軟開關技術的最新研究成果,本文在第三章提出並設計了移相式pwm軟開關高壓逆變電源的整體結構,對其中的主電路、驅動電路、保護電路和高壓高頻功率變壓器作了詳實的分析與設計。分享友人