acceptor impurity 中文意思是什麼
acceptor impurity
解釋
受素不純物-
When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".
當半導體中加入了施主感受主雜質，我們就說該物質「摻雜」了。 -
At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。 -
By means of chemical etching, microscope observation, eelectron probe x - ray micro - analyzer ( epma ), the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated, the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer
本文通過ab腐蝕、 koh腐蝕，金相顯微鏡觀察，透射電鏡能譜分析，電子探針x射線微區分析，研究了液封直拉法生長的非摻半絕緣砷化鎵（ lec ， si - gaas ）單晶中碳的微區分佈。 -
The results show that v5 + whose valence changes is an acceptor impurity and after heat treatment especially at 655. the phenomenon is consistent with the result of the dta ( differential thermal analysis ). the result of dta indicates that v2o5 has a phase transformation absorption peak at 655 while the signal of esr of low valence of v ion is the strongest
結果表明v離子是一種受主雜質，熱處理后，其價態產生了變化，尤其是在655熱處理時價態變化程度最明顯，與v2o5的差熱分析（ dta ）結果相吻合，差熱分析也顯示， v2o5在655存在一相變吸熱峰，此時樣品的低價態v離子的esr信號最強。
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