active emitting material 中文意思是什麼
active emitting material
解釋
發射活性材料-
Although many achievements have been acquired in oled structure material, production technology, drive methods, oled technology is just at the beginning, oled has given an equal chance for every company and country, and it is very important for our country to develop displaying technology of our own. the research direction of oled is managing to improve the device lifetime, at the same time found a perfect production technological flow and the global standard production mode. it is still a arduous mission that we want to live up to a batch production of oled displays in the future some years. active matrix organic light emitting diode ( am - oled ) adopts a circuit structure based on matrix addressing, and its driving circuit includes pixel driving circuit and peripheral driving circuit
在文中，首先，分析和研究了有源oled的像素驅動電路，闡述了amoled顯示屏及其周邊驅動電路的結構和原理;其次，提出了qvga解析度的有源oled顯示屏列電極數據引線的分塊（ block ）方法，確定屏上驅動電路所需要的控制信號之間時序關系和幅值要求;最後，以fpga控制器的設計為核心，對外圍控制ic進行了具體設計，建立控制器電路模塊模型和演算法流程，通過quartus軟體對其內部的各個電路模塊進行綜合設計和模擬，得到了正確的模擬波形，完成了解析度為qvga （ 320 3 240 ）的amoled專用驅動電路的設計。 -
The main work can be summed up as follows : firstly, we studied the thermal - field properties of vcsels, and analyzed the influences of current spreading, material parameters and operating conditions on the temperature distributions. secondly, we began with the electrode voltage and calculated the equipotential s distributions, compared the distributions of voltages and current densities in different depths of vcsels, and then studied the influences of the oxide - confining region with different position or thickness, and the different sizes of the gain - guided aperture and emitting window on the distributions of the injected current density, carrier concentration and temperature in the active region. thirdly, we realized the coupling of electricity, optical and thermal - fields, worked out the threshold voltage, calculated the distributions of the injected current density, carrier concentration and temperature under different offset voltages, and analyzed the impacts of temperature profile and carrier density on the refractive index, fermi levels and optical - field
具體工作可以概括如下：首先，研究了vcsel的熱場特性，分析了電流擴展，材料參數和工作條件對于溫度分佈的影響；其次，從電極電壓入手，計算出激光器中的等勢線分佈，並對不同深度處的電壓和電流分佈進行比較，研究了高阻區的不同位置和不同厚度、限制層和出射窗口半徑的大小對電流密度、載流子濃度和溫度分佈的影響；再次，實現了電、光、熱耦合，求出了閾值電壓，計算了不同偏置電壓下的電流密度分佈、載流子濃度分佈和熱場分佈，分析了溫度和載流子濃度變化對折射率、費米能級和光場的影響；最後，給出了考慮n - dbr和雙氧化限制層時激光器中的等勢線分佈，分析了n - dbr和雙氧化限制層對vcsel電流密度、載流子濃度、溫度和光場分佈的影響。 -
Active emitting material
放射活性材料
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