algaas 中文意思是什麼

algaas 解釋
鋁砷化鎵
  1. Aluminium gallium arsenide, algaas

    砷化鎵鋁
  2. Effect of high aluminum algaas oxidized layers on vertical - cavity surface - emitting lasers

    的激光二極體線列陣光纖耦合器件
  3. Finally, we got the 940nm ingaas / algaas strained quantum well semiconductor laser

    最終獲得ingaas / algaas結構的940nm應變量子阱半導體激光器。
  4. In this thesis, the 940nm high power ingaas / algaas strained quantum well semiconductor laser has been studied

    論文對ingaas / algaas高功率940nm應變量子阱半導體激光器進行了研究。
  5. An experimental approach is given for the measurement of the beam quality factors of an ingaas / algaas sch dqw laser

    本文還通過實驗測量了ingaas algaasschdqw激光器的光束質量因子m ~ 2 。
  6. The inherent defects and limitations of the conventional gaas / algaas qwips, which are lead by the structure, were analyzed

    分析了常規gaas algaas量子阱紅外探測器由於其結構所帶來的固有缺點及限制。
  7. 3. the principle of the novel gaas / algaas qwips and the strongpoints of the new structure were elucidated in detail

    詳細敘述了新型gaas algaas量子阱紅外探測器的工作原理及這種新型結構所帶來的諸多優點。
  8. We have grown ingaas / algaas strained quantum well laser by mbe. we studied the doped density in the cladding layer

    採用分子束外延設備mbe （ molecularbeamepitaxy ）對所設計的應變量子阱結構激光器進行晶體生長。
  9. All is the base work in the aspect of vcsel that a vcsel and a algaas microtip can be integrated and established as a vcsel / snom sensors

    這些主要都是為了打好將vcsel與algaas探尖膠合起來，構成vcsel snom復合探針做些在vcsel特性方面的基礎研究。
  10. For the algaas / gaas vcsel fabrication, oxide - confined structure provid electrical and optical confinement. algaas / gaas vcsel fabricated by selective oxidation and selective etching

    在vcsel器件研製方面，我們採用氧化物限制結構來對其的電流和光場進行限制。
  11. The epitaxial growths of ingaas / gaas / algaas fundamental material and the fabrication of 45 - deflector are extensively studied in our work. some measuring methods are used to evaluate the growth quality of our grown structure by pl, cv, x - ray double crystal diffraction, sem etc. property analysis are provided for it

    利用高能電子衍射、電化學c - v 、掃描電鏡（ sem ） 、 x射線雙晶衍射儀、光熒光譜儀（ pl ） 、原子力顯微鏡等多種方法對制備的器件進行了檢測，同時對實驗結果進行了必要的分析。
  12. Because a conventional quantum well is needed to add in the novel structure, many experiments were made on conventional gaas / algaas qwips. the experiment results based on various test methods were well analyzed. the detectivity of conventional gaas / algaas qwips can be comparable to the current level gradually

    由於改進結構中需要加入一常規量子阱，因此針對常規結構做了部分實驗，由多種測試方法得到大量實驗數據，並對其進行了全面的分析，常規gaas algaas量子阱紅外探測器的研製已經逐步趨向正常化。
  13. Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn

    Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。
  14. We studied the factor that influence the quality of gaas, algaas and ingaas by mbe, and studied the growth temperature, growth time and the flux ratio of v - iii beam

    研究了影響mbe生長gaas 、 algaas和ingaas等單晶材料質量的一些因素，對mbe生長溫度、生長時間和生長時的-族束流比進行了研究。
  15. The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm. the low theshold current 2. 9a the output power 20w at 17. 5a have been achieved by sioi isolation, ohmic contact and facet coating processes. the central wavelength is 979nm. at the same time, model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research

    激光器的生長結構採用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構，列陣條寬為4mm ，通過sio _ 2掩膜，歐姆接觸和腔面鍍膜等工藝，實現了閾值電流為2 . 9a ，驅動電流為17 . 5a時輸出功率為20w 。
  16. By use of g. d. shen ' s tunneling cascade theory we have fabricated high performance and high power tunneling cascade ingaas / gaas / algaas 950nm / 990nm double wavelength strained quantum well lasers on the basis of former tunneling cascade high power lasers and high brightness light emitting diodes. the lasers " two peak wavelength are 95 ? nm and 990 ? nm. el spectrum ' s fwhm is 3nm

    在以往隧道級聯大功率應變量子阱激光器及高亮度發光管的理論研究與實驗的基礎之上，採用沈光地教授提出的隧道級聯思想，成功研製出基於ingaas gaas algaas材料的高性能大功率隧道級聯950nm及990nm雙波長應變量子阱激光器，激射波長分別為952 2nm和990 2nm ， el譜的譜線寬度約3nm ，未鍍膜器件單面最大輸出光功率可達2w以上，閾值電流最低達120ma 。
  17. In optical fiber aspect, the incident beam can be collimated, converted and focused by some kinds of lenses, making the mode of incident beam matched with or near the optical fiber ’ s modes. in this thesis, thorough theoretical analyses and experimental investigations were made for the external optical properties of a 980nm high - power tunnel junction regenerated multi - active - region quantum well stripe - geometry algaas / gaas / ingaas ld and three different stripe - width 980nm high - power

    本論文圍繞本實驗室研發的新型隧道再生多有源區980nmalgaas / gaas / ingaas量子阱大功率半導體激光器和多種條寬的單有源區980nmalgaas / gaas / ingaas量子阱大功率半導體激光器的光場外特性、單模階躍折射率光纖和多模漸變折射率光纖的模場特性進行了深入的理論分析和實驗研究。
  18. The maximum one side output power of uncoated lasers attain to 2w and the minimum threshold current is 120ma. thereafter, algalnp and algaas material system lateral real refractive index waveguided 650nm / 780nm double wavelength multiquantum well lasers for dvd - rom driver and dvd player ' s optical pickup system are simulated and designed on the basis of the experiment of conventional lasers and the former research of tunneling cascade devices

    在此之後，結合650nm附近波長的常規algainp gaas多量子阱激光器的實驗結果與以往隧道級聯器件的研究，設計並模擬分析了基於algainp材料與algaas材料的可用於dvd - rom驅動器和dvd播放機光學讀取系統的側向實折射率導引隧道級聯650nm 780nm雙波長多量子阱激光器。
  19. Many kinds of vcsels has been fabricated in the domestic and an kind of algaas microtip with micrometer dimension has been successfully grown on gaas substrate with self - organization by liquid phase epitaxy ( lpe ). it was reported that a vcsel and a si microtip can be simply aligned together using an adhesive agent. hi this article, the peculiarity of vcsel has been observed and investigated

    在vcsel的制備方面，國內也已經有著很成熟的經驗，已經成功的製造出了多種類型的器件；我們半導體教研室利用現有的液相外延生長設備採用自組織生長的方法成功制備出外觀形貌規整的m量級尺寸的algaas的類探針點。
  20. With the development of gesi epitaxy technology, the performance of gesi hbts is already superior to si bjts, and to algaas / gaas hbts and gaas mesfets in some aspects, so the gesi hbts have much prospect for wide applications

    隨著gesi外延技術的發展， gesihbt的性能遠遠優于sibjt ，並在某些方面優于algaas / gaashbt 、 gaasmesfet ，所以gesihbt具有廣闊的應用前景。
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