amorphous solid 中文意思是什麼

amorphous solid 解釋
非固體非定形體
  • amorphous : 玻璃態的
  • solid : adj 1 固體的;實心的,實質的,密實的。2 【數學】立體的,立方的,三維的。3 結實的,堅強的,堅固的...
  1. The unstable solid solution would disintegrate and transform into carbide phases in these systems of sisocso, tisocso and zrsocso, based on the increase of free energy introduced by the effect mechanical alloying. for the system of wsocso, the solid solution had not transformed into tungsten carbides but an amorphous phase, which was different from those systems. the exist of fe in these experiments, which came from the abrasion of ball - milling tool because of the higher hardness of w and w - c solid solution, would induce the crystalline - to - amorphous phase transformation during milling

    C50球磨體系中,繼續球磨時,不穩定的固溶體在機械合金化作用下,由於體系能量提高,會發生分解相變,從而可以形成碳化物;對于w扣c50球磨體系, w ? c固溶體具有較高的硬度,磨削不銹鋼質的球磨介質和球磨容器,而引入雜質,其中fe會促使固溶體向非晶相轉變。
  2. The inperfect crystal structure and its analysis for materials, is an elective course for the master graduate student, which include the crystallology principle, development of crystal diffraction, crystal determination and computer simulation of new phase, analysis of solid solution and superstructure, correction of crystal structure and bondvalent theory, analysis of inperfect crystal structure, analysis of amorphous structure and so on

    材料不完整晶體結構及其分析方法,為材料科學及工程等專業碩士研究生的選修課,內容包括晶體學基礎、晶體衍射技術最新進展、新相晶體結構測定與數值模擬、固溶體與超結構分析、晶體結構修正與價鍵理論、不完整晶體結構分析、非晶結構分析等。
  3. Wang yongqian, liao xianbo, ma zhixun, et al. solid - phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing [ j ]. applied surface science, 1998 135 : 205

    薛清,郁偉中,黃遠明.利用快速退火法從非晶硅薄膜中生長納米硅晶粒[ j ] .物理實驗, 200222 ( 8 ) : 17
  4. Aluminum coagulation pretreatment enhances the uf removal of ha and greatly ameliorates the effect of ha on the membrane flux decline. at ph = 7. 0 the mechanism is adsorption of ha on the amorphous solid - phase al ( oh ) _ 3 ( s ), while at ph = 5. 0 the mechanism is charge - neutralization. in terms of the removal of ha ( toc, uv _ ( 254 ) ) and the membrane flux decline, the effect of coagulation under ph = 7. 0 condition turns out to be much better than that under the condition of ph = 5. 0

    Ph = 7 . 0條件下的混凝預處理機理主要是鋁鹽高分子水解產物對腐植酸的吸附網捕作用, ph = 5 . 0時的機理主要是帶正電荷低分子鋁鹽水解產物吸附電中和作用,從toc和uv254的去除率以及膜滲透通量的變化情況來看, ph = 7 . 0條件下的混凝預處理優于ph = 5 . 0 。
  5. The nanowire is solid and the periphery is very clean without any coating of amorphous material. the - sic nanowires axes lie along the < 111 > direction and possess a high density of planar defects

    納米線是實心的並且表面清晰不帶有任何包覆層,其軸線方向是< 111 >方向,並且在納米線內部有高密度面缺陷。
  6. First, the solid ice on the surface could have been annealed, meaning that its temperature could have been raised above the 78 kelvin mark to allow the amorphous ice to recrystallize

    首先,表面的固體冰曾經退火過,也就是說其溫度曾升高至78k以上使無定型冰重新結晶。
  7. By the increasing of temperature, liyco3 - xo4 was further changed into licoo2 and lixco1 - xo, and then licoo2 formed by the reaction of lixco1 - xo with li2o. the reaction that produces licoo2 is almost completely done at 700, although some remaining li2o and li2co3 present as a partially amorphous film dispersed on the surface of licoo2, which can accelerate the growth of licoo2 crystallites. however, when temperature is higher than 850, some of licoo2 begin to decompose into the solid solution phase of liyco2 - yo2 and lixco1 - xo, and damaged its own crystal structure

    制備licoo _ 2的合成反應中licoo _ 2的微結構不斷發生變化,隨著焙燒溫度升高, co _ 3o _ 4晶粒逐漸減小, licoo _ 2晶粒和顆粒逐漸長大,晶格內部缺陷減少, licoo _ 2晶格趨于完整,在焙燒溫度為850時licoo _ 2晶粒達到最大值;焙燒溫度低於700 ,晶胞參數a隨著焙燒溫度上升而減小,晶胞參數c隨著焙燒溫度上升而增大;而高於700則晶胞參數基本保持不變。
  8. The amorphous phase is formed from the transformation of super - saturate solid solution, and there is no nuclear formation and grow process

    非晶相的形成是通過超過飽和固溶體的失穩轉變而成,不存在形核與核長大過程。
  9. Yoon s y, oh j y, kim c o, et al. low temperature solid phase crystallization of amorphous silicon at 380 [ j ]. journal of applied physics, 1998 ( 84 ) : 6 463 - 6 465

    陳一匡,林揆訓,羅志,等.鋁誘導非晶硅薄膜的場致低溫快速晶化及其結構表徵[ j ] .物理學報, 2004 ( 53 ) : 582 - 586
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