amplifer gain 中文意思是什麼
amplifer gain
解釋
放大器增益-
The basic principle, main properties, typical parameters, technical characteristics and general situation of klystron are introduced. the electron beam prebunching in the modulated cavity and shift tube of relativistic klystron amplifer ( rka ) is studied analytically, a self - consistent equation of radiation generated by the prebunched electron beam in the radiation cavity is derived using the field method of particle ? wave interaction instead of the electrical circuit method, and in terms of it, the gain in the linear regime calculated, a field analysis method is proposed. the theory analysis shows that the characteristic parameters, such as resonance frequency, real part of gap - impedance, external quality fadtor in all kinds of klystron output circuits including single - beam, multi - beam, single - gap, multi - gap, single - beammulti - gap, multi - beam multi - gap klystron output circuit, can be calculated by the field analysis method
本文系統的介紹了速調管的工作原理、主要特點、發展概況、主要性能指標和技術特點，解析的研究了電子束在相對論速調管放大器的調制腔和漂移管中的預群聚;用粒子波互作用的場方法導出了在輻射腔中預群聚電子束產生輻射的自洽方程，同時對線性區的增益進行了計算。理論分析表明，場分析法可用於計算單注單間隙、多注多間隙、單注多間隙和多注多間隙速調管輸出迴路的諧振頻率、間隙阻抗實部和外觀品質因數等特性參數。 -
Also, by using the hot - carrier immiunity analog circuit structure, the output resistance degradation caused by the hot - carrier degradation is deeply supressed and the small - dimensional effect can be improved shown by the spice 3f5 simulation results, and the gain degradation of a cmos o peration amplifer after 10 years operation decreases from 23 % to 10 % with this structure according to bert2. 0 simulation
而串聯常開n mosfet的模擬電路結構可使n mosfet輸出電阻的退化大為減小同時還可改善器件小尺寸效應引起的輸出電阻下降：採用該結構的os運放與未採用的相比，其十年工作后增益的退化由23下降為10 。 -
This subject aim at designing a linear power amplifer whose output power is 40w for 225 - 450mhz band. but it seems not easy to finish the task because of this power amplifier own unique requirements including high output power, broad working frequency band, high linearity, and flat gain. due to the complexity involved, theoretically several soltuions are derived in the final scheme such as broadband matching technology, power - retreat, power synthesize, automatic power control and negative feedback. in addition, the design will be optimized by eda software and the final test result indicates that our design is successful
本課題的目標是研製一個輸出功率為40w的225 450mhz的線性功率放大器。由於該功放要求輸出功率大，工作頻帶寬，帶內增益波動小，線性度高，所以其終合設計難度大。鑒于這個原因，在理論設計上筆者採用了寬帶匹配、功率合成、功率回退、負反饋、自動功率控制等技術；在實踐中精心設計電路，並且配合eda軟體模擬，最終達到所要求的指標。
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