annealing temperature 中文意思是什麼
-
In our experiment, the specific fragment was amplified from transgenic bobwhite genome dna at annealing temperature 61 by using high - fidelity pfu dna polymerase and cloned into clone vector pgem - 7fz ( + ), then sequenced. the cloned sequence was completely identical to the sequence which was issued in genbank
本實驗採用了高保真pfudna聚合酶，在退火溫度61條件下從轉基因bobwhite品種基因組dna中擴增出特異性片段，將此片段插入克隆載體pgem - 7fz （ + ） ，經測序和序列分析表明，所擴增得到的片段含有bar基因完整的讀碼框，並且序列與genbank中發表的序列完全一致。 -
Effects of annealing temperature on exfoliation properties of al6mgsc and 2101 alloys
合金和2101合金剝落腐蝕性能的影響 -
2. the optical transmission spectra of batio3 thin films annealed at different temperatures on fused quartz substrates are measured. the bandgap energies calculated from their optical transmission spectra are larger than that of single crystals reported in the literatures, whereas for poor - crystallized films with lower annealing temperature, their bandgap energy values are much larger than that of single crystals
發現batio3多晶薄膜的光學帶隙大於文獻報導的單晶薄膜的光學帶隙，對于結晶性好的薄膜，其光學帶隙接近於單晶值，退火溫度越低，結晶性越差，與單晶的光學帶隙相差越大。 -
In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time
在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。 -
We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem
論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。 -
It is verified that the high temperature in rtp can efficiently dissolve the existing oxygen precipitates, indicating that the annealing temperature other than time is the determinative factor for the dissolution of oxygen precipitates
研究證實：高溫快速熱處理可以顯著地消融氧沈澱，氧沈澱消融的決定性因素是熱處理溫度。 -
Effect of annealing temperature on the properties of nickel oxide thin films prepared by sol - gel dip coating
凝膠法制備的氧化鎳薄膜的影響 -
The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film
退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。 -
In order to investigate the interfacial reaction of high - k thin film on si substrate, the high - k samples were studied by xps as a function of annealing temperature
為了考察high - k物質與si基底的界面反應，以溫度為函數，對樣品進行xps光電子譜線測定。 -
The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists
本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。 -
And then, we measured x - ray diffractive spectrum of samples and investigated the crystal lattice structure of samples treated under different annealing temperature and different implantation condition comparing the diffraction peaks
然後，通過x射線衍射測量了樣品的衍射譜，通過比較不同樣品衍射峰的形狀，了解了不同退火溫度及注入條件下樣品的晶格結構情況。 -
Ir spectrum analyses have demonstrated that the structure mode of the substoichiometric silicon - 53 - abstrct oxide films ( sio ~ ) can be described as a mixture of rmm and rbm x at relatively low annealing temperature. the reaction, si - si ~ o4 ~ - - - ~
進一步升高，由a工膜的xrd圖矛前人的實驗推車如t 800硅晶化自分急后增力，相應的a七減少， nc和a七。 -
By sims method, we analyzed the profile distribution of mn and c, found that increasing the annealing temperature is beneficial to the diffusion of mn, but has no influence to c. mfm and squid measurements demonstrate that sub micron single - domain magnetic mnas particles found in sample annealing at 850 for 15s show ferromagnetism at room temperature and have a high curie temperature more than 300k
利用二次離子質譜方法對mn和c在樣品中的分佈進行了研究，發現退火溫度的上升，有利於mn的擴散；而對c的分佈影響較小。利用磁力顯微鏡和超導量子干涉儀對樣品的磁性質進行了研究。發現在850 + 15s退火處理的樣品中形成了亞微米級單疇磁性mnas粒子；經測試其在室溫下呈現出鐵磁性，居里溫度在300k以上。 -
We measured the samples " electrical properties ( square resistance, square carrier concentration, carrier mobility and hall coefficient ) at room temperature by hall measurement. the experimental results revealed that all the samples are p - type, with increasing the annealing temperature, the carrier mobility increased and the square carrier concentration decreased. these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing
所有樣品均為p型導電類型；發現在650到850溫度范圍內，隨著退火溫度的升高，樣品的方塊載流子濃度呈下降趨勢，而載流子遷移率呈上升趨勢；這是由於在退火過程中，隨著退火溫度的升高，有更多的mn參與mnas相的形成，使得以替位受主形式存在的mn減少，並且晶格缺陷得到恢復所致。 -
Xps showed that there were much chemical absorbing water on the ti _ ( 2 ) film surface which mainly existed in form of - oh, and the contents of - oh was increasing with the annealing temperature. hydrophilic property became better with the annealing temperature ; the essential relation between the changing of contact angle and light - induced - electrons and light - induced - cavities was studied in details. the photocatalysis of samples without heat treatment was very bad, but that of samples after heat treatment was much better
Xps的分析表明：試樣的表面含有大量的化學吸附水，主要以羥基的形式存在，隨著熱處理溫度的升高，吸附羥基的含量在增加；親水性能測試表明：隨著氧氣分壓的變化，其親水性能變化不大，隨著熱處理溫度的增加，試樣的親水性能在變好，並從理論上解釋了親水性能光照前後變化和光生電子?空穴對之間的本質關系。 -
However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0 -
We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5
研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。 -
With the annealing temperature increasing, the average optical transmittance increases and the absorption edge of the transmission curve of the films moves toward short wavelength
Azo薄膜的塞貝克效應的結果表明: azo薄膜具有明顯的塞貝克效應，溫差電動勢隨著溫差（ ? t ）的增大而呈線性增大。 -
The one deposited at 300 substrate temperature owns denser crystallites. during the annealing process, with the increasing of annealing temperature, the crystallites become bigger, and crystalline phase begins to transfer. when the annealing temperature gets to 800, tio2 transfers to rutile structure completely
（ 2 ）常溫下制備的tio _ 2薄膜是無定型的， 300濺射薄膜表面有緻密的晶粒，熱處理溫度升高，晶粒變大，晶相開始轉化， 800退火tio _ 2完全轉化為金紅石結構。 -
In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films
在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。
分享友人