annealing time 中文意思是什麼
annealing time
解釋
退火時間-
In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper
本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。 -
We also find that the pinning phenomenon gradually disappear with thicker single layer of the [ pt / mn ] n films, and firstly prepared permalloy before the deposition of [ pt / mn ] n multiplayer more easily form anti - ferromagnetic structure than another caseo maybe this is a good way to shorten the annealing time
我們還發現隨著單層厚度的增加釘扎現象逐漸消失，而且先沉積nife層，后沉積pt / mn多層膜的情形更容易獲得反鐵磁結構。這可能是縮短退火時間的一種好方法。 -
By analyzing the microstructure of as - cast alloys with different surplus of samarium added, the optimum surplus of samarium is decided. by comparing the microstructure of the alloys annealed for different time, the ideal and economical annealing time is confirmed. the microstructure and phase composition of alloys during the whole preparation of sm2fe17nx are analyzed using the scanning electron micrograph with energy - dispersive x - ray analysis and x - ray diffraction patterns
本論文首先就熔煉工藝參數對鑄態組織微結構的影響進行了探討，並制定出一套較為合適的熔煉工藝；通過對不同釤加入量的鑄態組織微觀結構的觀察分析，確定了原料配置過程中釤的最佳補償量；通過對採用不同退火時間的合金組織進行比較，確定了理想、經濟的退火時間；同時還利用掃描電子顯微圖像和x射線衍射圖譜，比較了整個制備過程中，試樣微結構和相組成的變化情況。 -
And the impact of processing conditions on the electrochemical performance of the porous sn - cu alloys was investigated. results showed that it was good to add more verdigris and to make the annealing time longer for improving the performance. however, the problem of capacity fading can not be solved completely by this method
並對制備合金材料過程中所添加物質的種類和比例、燒結時間等工藝參數對合金的性能的影響進行了分析，發現添加堿式碳酸銅，並且增大添加比例以及延長燒結時間對電極材料的循環壽命有利，但是不能根本解決容量衰減的問題。 -
The effects of baking temperature, baking time and prestrain on the bake hardenability and dent resistance of isotropic sheet steel and bh sheet steel produced by batch annealing were studied
摘要研究了烘烤溫度、烘烤時間和預拉伸應變量對罩式爐退火工藝生產的各向同性鋼的烘烤硬化性的影響，並與力學性能相當的冷軋烘烤硬化鋼進行了對比。 -
In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time
在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。 -
It is verified that the high temperature in rtp can efficiently dissolve the existing oxygen precipitates, indicating that the annealing temperature other than time is the determinative factor for the dissolution of oxygen precipitates
研究證實：高溫快速熱處理可以顯著地消融氧沈澱，氧沈澱消融的決定性因素是熱處理溫度。 -
A novel two - phase genetic - annealing algorithm is proposed to solve the vehicle routing problem with time window ( mdvrptw ) and multi - constraint in multiple dispatching centers
摘要針對多約束條件的多配送中心有時間窗車輛路徑問題，提出了一種二階段遺傳退火演算法。 -
Addition agent for mgo used on the silicon steel the agent can improve qualities of oriented silicon - steel coatings, enhance magnetic properties of silicon steel and decrease the finishing annealing emperature and time in manufacturing of oriented steel
作用：專用於取向硅鋼片高溫退火隔離塗層，是國內新的取向硅鋼塗層用氧化鎂，該塗層具有國內第二代硅鋼氧化鎂的透氣性，又具有納米氧化鎂的活性。 -
Annealing cooling processes are classified in accordance with material and thickness of each steel coil in annealing plan, then multi - input and single - output modeling problem for cooling time prediction of hood - type annealing furnace is simplified to a group of single - input and single - output modeling problem
摘要按照退火計劃內各鋼卷的鋼種和厚度對退火中的冷卻工藝進行分類，將罩式退火爐冷卻時間預報的多入單出建模問題化為一組單入單出建模問題。 -
The visible optical absorption of the film increases with increasing annealing time, coating - annealing time and concentration of the starting solution
樣品的可見光區光吸收率隨著初始溶液濃度、退火時間、塗膜厚度的增加而增加。 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige -
However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0 -
In the experiments, we also found the - sources flow rate, temperate of the substrates, annealing time and annealing temperature have an important infuence to epitaxial quality of the films
在實驗過程中，我們也發現-族源氣體的流量比、襯底溫度、退火時間和退火溫度對外延晶體的生長質量也有重要的影響。 -
The crystal grains propagate with prolonging the annealing time
隨著硫化時間的延長，薄膜晶粒呈長大趨勢。 -
With the prolongation of the annealing time at 400 " c and sokpa, the energy gap and the electrical resistivity increase and all the thin films trend to n - type semiconductors
400 、 80kpa硫化時，薄膜均呈n型導電特性，而且隨著硫化時間的延長，薄膜禁帶寬度及電阻率增大。 -
At present, local morphology was used to discriminate ferroelectric phase area and non - ferroelectric phase area, but once morphology variation of phase transformation was tiny, the ferroelectric phase area and non - ferroelectric phase area was hard to discriminate only from morphology view. however, the introduction of sndm can overcome this limitation, and visualize the investigation of annealing process. combining x - ray diffraction, atomic force microscopy ( afm ) with sndm, the phase transformation process of pzt thin films with different annealing time and of plt films with different annealing temperature were studied, respectively
結合原子力顯微鏡（ afm ） 、 sndm 、 x射線衍射（ xrd ） ，通過對微區形貌、電容分佈變化和鐵電薄膜結晶情況的表徵和分析，研究了pzt鐵電薄膜和plt鐵電薄膜的晶化過程，分析了不同退火時間對pzt鐵電薄膜微結構，不同退火溫度對plt薄膜的微結構和微區極化分佈的影響，有效克服僅依據形貌特徵判定鐵電相與非鐵電相的局限性，實現鐵電薄膜微區晶化過程的可視化分析，豐富了晶化過程的研究方法。 -
Both the size and density of oxygen precipitation increase with the annealing time, and the size of oxygen precipitation decrease with the increase of the annealing temperature
隨著退火時間的延長氧沉澱尺寸增大，密度略有增加；隨著退火溫度的升高，氧沉澱尺寸相對減小。 -
By analyzing the microstructure and phase composition of sm - fe alloy annealed and nitrided for different time using scanning electron microscopy and x - ray diffraction technique, the optimum values for the annealing time and the nitriding time is determined
通過對不同退火時間和氮化時間下材料的掃描電子顯微分析和x -射線衍射分析，確定了最佳的退火時間和氮化時間。 -
The results turned out that the crystal structure was changed by the variation of the deposition temperature and annealing time. the surface morphology was greatly influenced by the spray parameters which atomized the precursor droplet in different diameters and different intensities
薄膜的表面形貌隨著噴霧參數的改變發生了較大的改變，噴霧參數的改變使是霧化液滴大小和液流密度隨之發生了一定改變。
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