atomic crystal 中文意思是什麼

atomic crystal 解釋
原子結晶
  • atomic : adj. 1. 原子的。2. 極微的。3. 強大的。
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  1. Treating the anharmonic terms of potential energy as perturbations, and employing the formulas for atomic displacements and hamiltonian in phonon occupation number representation, the formulas for thermal expansion coefficients of crystal nano - wires are derived and the numerical calculations are carried out in this paper

    摘要將原子間相互作用勢的非諧項作為微擾，運用聲子數表象中的晶格原子振動位移和晶格振動哈密頓公式，推導了納米晶體線的熱膨脹系數公式，並進行了數值計算。
  2. The spacing between atomic planes in a nickel crystal is 2. 15×m.

    一塊鎳晶體中各原子平面的間距為215米。
  3. Abstract : we have studied the spontaneous emission from a three - level atom with an external - driving field in a photonic crystal. as a result of quantum interference and photon localization, the population in the two upper levels displays quasi - oscillatory oroscillatory behavior. this depends on the initial atomic state and the relative positions of the two upper levels from the forbidden gap. the intensity and the phase of the external field can affect spontaneous emission from the atom. the properties are different from a three - level atom either in vacuum or in aphotonic crystal without an external driving field

    文摘:討論了在雙光子驅動場作用下，三能級原子在光子晶體中的自發發射問題.由於量子干涉和光的局域化作用，兩個上能級中的占據數將具有周期振蕩或準周期振蕩的性質，這不僅依賴于兩個上能級與禁帶的相對位置，同時也依賴于原子的初始狀態，而且還與驅動場的強度、驅動場的入射位相有關.這些性質既與真空中帶有驅動場的原子的自發發射性質不同，也有別于無驅動場作用下光子晶體中三能級原子的自發發射性質
  4. Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol

    Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。
  5. No3 : revealing crystal defects at atomic level by field - emmission hrem ( invited lecture ), f. h. li, proceedings 7th asia - pacific electron microscopy conference, singapore, june24 - 30, 2000, pp. 26 - 27

    場發射高分辨電子顯微鏡在揭示原子解析度晶體缺陷上的應用（特邀論文） ，李方華，科儀新知， 21 （ 1999 ） 8 - 15
  6. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  7. 1. mainly for the engraving of ron - metal martials : ox horns wood plastics poly methgl atomic materials crystal jade, etc. 2. for the processing of small - width artistic works. for the engraving of bamboo piece, polg methly plank and cloth. the pltterns and characters engraved are trae to life and pleasing to the eye

    2適用於小面積的工藝品加工在雙色板木板竹片有機玻璃板布匹上刻制各種各樣的圖形和文字，圖文並茂，形象逼真可觀。
  8. It turns out that such single - crystal ingots are no longer good enough for the job : they have too many “ defects, ” dislocations in the atomic lattice that hamper the silicon ' s ability to conduct and otherwise cause trouble during chip manufacture

    然而這樣一顆單晶棒已經不足以滿足工作需求：它們有太多缺陷分佈在原子晶格之間，這會影響矽的導電能力，而且會在晶片製造過程中帶來麻煩。
  9. It showed that the polybenzoxazine precursor had intercalated into vermiculite layers. cured the composites, the diffraction peak of vermiculite d001 in xrd spectrum disappeared. according to atomic force microscopy ( afm ) images, in the cured - composites, when the content of vermiculite minerals was less of 3 %, most crystals were cleave d into the " exfoliated " shape in which crystal gallery breadth was about of 113nm

    Dfm分析表明：在蛭石含量低於3時，形成主要以剝離狀納米分散為主的固化結構，相鄰蛭石晶片間距可達到113nm ，隨著蛭石含量的增多，逐漸形成以插層狀納米分散為主的固化結構，相鄰蛭石晶片間距在40nm左右。
  10. Then protein crystal of eif - 5a was observed using atomic force microscopy. further, the polyclonal and monoclonal antibodies were gained from immunized rabbits and rats. hypusine - contained eif - 5a plays a role in cell growth and differentiation

    用得到的重組蛋白分別免疫家兔和小鼠，獲得兔的抗血清和三株持續分泌單抗的雜交瘤細胞株，為進一步分析eif - 5a的功能提供了檢測手段。
  11. It was found that large scale single crystal ttf m - nbp film can be obtained by this method. atomic resolution surface images were observed both with atomic force microscope and scanning tunneling microscope. high density data storage was realized by applying voltage pulses between the stm tip and the substrate

    用原子力顯微鏡afm和掃描隧道顯微鏡stm都觀察到了ttf m - nbp薄膜表面的原子級分辨像。通過stm針尖施加脈沖電壓在ttf m - nbp薄膜上實現了納米級的信息存儲，最小記錄點直徑約為1 . 2nm 。
  12. The tungsten oxide films with catalyst by two methods were characterized by x - diffractometer, tunnel scan - atomic force microscope, ft - ir, double - beam uv - vis - nir spectrophotometer and speediness volt - ampere cycle meter. as results of x - diffractometer, pt / wo3 sputtered film samples are crystal when annealed at 400 with distinct diffractive acuti - apices

    本文分別用x衍射儀、隧道-原子力顯微鏡、傅立葉變換紅外光譜儀、雙束紫外可見分光光度計、快速伏安循環法等表徵了用以上兩種方法制備的三氧化鎢摻雜薄膜。
  13. Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )

    本文採用分子束外延（ mbe ）方法在gaas （ 001 ）襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜，採用原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）與x射線雙晶衍射（ dcxrd ）等方法研究了insb / gaas薄膜的表面形貌與結晶質量。
  14. Further more, atomic force microscopy ( afm ) results showed no noticeable difference in grain size. it ' s concluded that magnetic treatments results in oriented stacking of vopc molecules. this change in crystal structure leads to an improvement in photoconductivity behavior : a photoreceptor used pbpc as the charge generation layer had a much shorter decay time

    我們分別制備了氧化鋅（ zno ）酞菁鉛（ pbpc ）和氧化錫（ sno ）酞菁鉛（ pbpc ）多層異質復合薄膜，對兩種結構的復合薄膜進行了紫外-可見吸收光譜測試（ uv - vis ）和x射線衍射分析（ xrd ） 。
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