barrier tunneling 中文意思是什麼

barrier tunneling 解釋
勢壘隧穿
  • barrier : n. 1. 柵，柵欄，隔欄，障壁，隔板，擋板；賽馬的出發柵。2. 關口，（海關）關卡。3. 障礙；壁壘；界線。4. （擴伸到海洋中的）南極洲冰層。vt. 用柵圍住。
  • tunneling : 管道傳送，隧道，管道傳輸
  1. Conventional resonant tunnel diodes allow currents to flow at a specific voltage, one at which the electrons have an energy that is resonant with the tunneling barrier

    傳統共振穿隧二極體在特定電位下可讓電流通過，此時電子的能量共振于（即等於）穿隧位障。
  2. We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field. the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells. it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field. the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells. incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells. the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures

    對磁量子結構中電子在外加恆定電場下的輸運性質進行了研究.分別計算了電子隧穿相同磁壘磁阱和不同磁壘磁阱構成的兩種磁量子結構的傳輸概率和電流密度.計算結果表明，在相當寬廣的非共振電子入射能區，外加電場下電子的傳輸概率比無電場時增加.對于電子隧穿相同磁壘磁阱構成的雙磁壘結構，共振減弱；對于電子隧穿不同磁壘磁阱構成的雙磁壘結構，無電場作用時的非完全共振在適當的偏置電壓下轉化為完全共振，這時的電子可實現理想的共振隧穿.研究同時表明，磁量子結構中存在著顯著的量子尺寸效應和負微分電導
  3. Current flows through the device by the process of quantum tunneling : a small number of electrons manage to jump through the barrier even though they are forbidden to be in the insulator

    電子在元件中利用量子穿隧效應流動，少量的電子可穿過絕緣層的障礙到達另一邊。
  4. Magnetoresistance effect of double - barrier magnetic tunneling junction applied in spin transistors

    雙勢壘磁性隧道結的磁電阻效應及其在自旋晶體管中的應用
  5. For the first current plateau ， two kinds of sequential resonant tunneling of - process and - x process are observed in the wide barrier gaas / alas superlattice under various pressures for p < 2kbar ， the high field domain is formed by - process ， while for p > 2kbar ， the high field domain is formed by - x process when the barrier width was decreased to 2nm, we found that ground - state -

    對于寬壘（ > 3 . 5nm ）的gaaa / alas超晶格，當流體靜壓力超過臨界壓力2kbar后，平臺寬度隨壓力的升高而收縮。對于窄壘（ 2nm ） gaaa / alas超晶格， u - i曲線上的平臺將不隨壓力變窄。
  6. We found that the exciton transference between cdznse quantum well and cdse quantum dots is dominated by exciton tunneling at a thin znse barrier layer

    在薄隔離層時，量子阱與量子點之間的激子轉移過程由激子隧穿過程決定。
  7. 4. photolumescence and micro - photoluminscence of cdznse qw / znse / cdse qds with different znse barrier thickness was studied to investigate the influence of tunneling on excitonic combination in quantum well and quantum dots. we studied the temperature dependent of the excitonic recombination

    通過cdse量子點znse cdznse量子阱結構在不同壘層厚度情況下的發射譜和變溫激子發射譜，研究了激子隧穿過程對量子點和量子阱中激子復合的影響。
  8. Transmission coefficient of electron tunneling through rectangular barrier has been calculated based on the exact solution of the one - dimensional time - independent schr ? dinger equation with the transfer matrix method ; furthermore, the dependence of the transmission coefficient on the effective masses and parameters of rectangular barrier also has been studied

    摘要利用傳遞矩陣方法精確計算了一維定態薛定諤方程，求解出電子穿過矩形勢壘的透射系數，進一步研究了該透射系數與有效質量和矩形勢壘參數的關系。
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