bias device 中文意思是什麼

bias device 解釋
偏壓裝置
  • bias : n 1 成見，先入之見，偏執，偏見 （opp Impartiality ）; 傾向，嗜好；癖 （towards）。2 （衣服等上面...
  • device : n. 1. 設計，計劃；方法，手段。2. 〈pl. 〉意志，慾望。3. 謀略，策略，詭計。4. 器具，器械，設備，裝置。5. 圖案，圖樣；花樣；紋章；標記，商標；（紋章上的）題銘。
  1. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  2. If the device supports lod bias adjustments ; otherwise,

    如果設備支持lod偏移調整，則為
  3. Determines whether the device supports level of detail bias adjustments

    確定設備是否支持詳細等級（ lod ）偏移調整。
  4. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  5. Polycrystalline diamond films with preferred orientation by adopting assisted - bias hfcvd technique are prepared, and the mechanisms of the nucleation and growth of the films are studied. in addition, application of the film to the heat sink of power electron device is discussed

    採用輔助偏壓熱絲cvd技術，制備擇優生長的多晶金剛石薄膜，研究了金剛石薄膜的成核及生長機理，並將其應用於功率電子器件的熱沉。
  6. Abstract : a new approach, gate - capacitance - shift ( gcs ) approach, is described for compact modeling. this approach is piecewise for various physical effects and comprises the gate - bias - dependent nature of corrections in the nanoscale regime. additionally, an approximate - analytical solution to the quantum mechanical ( qm ) effects in polysilicon ( poly ) - gates is obtained based on the density gradient model. it is then combined with the gcs approach to develop a compact model for these effects. the model results tally well with numerical simulation. both the model results and simulation results indicate that the qm effects in poly - gates of nanoscale mosfets are non - negligible and have an opposite influence on the device characteristics as the poly - depletion ( pd ) effects do

    文摘:提出了一種新的建立集約模型的方法，即柵電容修正法.此方法考慮了新型效應對柵電壓的依賴關系，且可以對各種效應相對獨立地建模並分別嵌入模型中.另外，利用該方法和密度梯度模型建立了一個多晶區內量子效應的集約模型.該模型與數值模擬結果吻合.模型結果和模擬結果均表明，多晶區內的量子效應不可忽略，且它對器件特性的影響與多晶耗盡效應相反
  7. Wellhead bias - adjustable device for rod - pumped well

    抽油機井井口調偏裝置
  8. A novel self - bias high - voltage device structure for the start - up circuit of an off - line switching model power supply ic is described

    摘要設計了一種新的用於離線式集成開關電源啟動電路的自偏置高壓器件結構。
  9. This machine adopts high - level siemens plc concentration control, set up with computer controlled gear shifting vacuum gauge, and a three - flow controller, one set of contra - variant bias power and four - route contra - variant arc power supply, four side - installed heating tubes, computer pid automatic temperature control device, 60 and 100 two kinds versatile arc supply

    該設備採用先進的西門子plc集中控制，裝有電腦自動換檔真空計和三路流量控制器，一套逆變偏壓和四路逆變弧電源，邊裝式加熱管四支，電腦pid自動控溫， 60和100兩種弧源通用。
  10. Both spontaneous and reverse - bias assisted recoveries of device performances were observed, and these degradation and recover } " phenomena were discussed in terms of the movement of ionic impurities and the formation of permanent and induced electric field dipoles in organic layers

    文中定性的比較了在中斷電場和反向電場前後的發光特性變化，定量的給出了中斷電場和反向電場前後發生器件性能衰變的恢復程度。
  11. The purpose of introducing ferroelectric polymeric pvdf material was to make use of the remanent polarization of ferroelectric materials and to study the effect of the internal field formed in the device during the device worked. the diodes were driven at constant voltage and were also kept under short - circuit or reverse - bias conditions

    本文將具有特殊極化性能的鐵電高分子材料pvdf引入器件，目的在於利用其電場下其殘余極化特性，研究此種器件工作時形成的內電場情況及其對器件穩定性的影響。
  12. True if the device supports true slope scale - based depth bias ; otherwise,

    如果設備支持實際基於斜率的深度偏移，則為
  13. Determines whether the device supports performing true slope scale - based depth bias

    確定設備是否支持執行實際基於斜率的深度偏移。
  14. What value bias resistors ( if any ) are used in the device ? are they accessible for modification

    用於設備偏置電阻的取值情況如何（若有） ？如果要修改，容易嗎
  15. Determines whether the device supports legacy depth bias

    確定設備是否支持舊式深度偏移。
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