bias power 中文意思是什麼

bias power 解釋
偏置功率
  • bias : n 1 成見，先入之見，偏執，偏見 （opp Impartiality ）; 傾向，嗜好；癖 （towards）。2 （衣服等上面...
  • power : n 1 力，力量；能力；體力，精力；（生理）機能；〈常 pl 〉才能。2 勢力，權力，權限；威力；政權；權...
  1. As a mix - mode chip, the application - specific controller including analog signal and digital signal processing block can be applied to receiving, amplifying, processing, controlling signals of pir, and offer a wide application in some fields. in analog circuits, by sub - threshold mosfet, a self - bias current source is presented, which has a high power supply restrain ratio and a complementary to absolute temperature characters

    這款晶元是一款數模混合晶元，包括模擬信號處理（含模數介面模塊）和數字信號處理兩大模塊，完整實現對紅外信號的接收、放大、處理、控制，產生有效數字電平驅動繼電器、可控硅等負載，應用於自動燈等多種場合。
  2. 9 one suit of contra - variant bias power

    9一套逆變偏壓
  3. Experimental results show that the bistable of tuned substrate self - bias was determined by discharge gas pressure, discharge power and tuning circuit parameters etc. the bistable exists is because of there is capacitive coupling in icp system and sheath capacitance is nonlinear

    實驗結果表明這種跳變回滯現象與等離子體的放電氣壓、射頻功率以及調諧外電路的參數等多種因素密切相聯系。而產生跳變回滯現象的原因是icp中存在容性耦合以及鞘層電容具有非線性特性。
  4. Simox soi wafers produced by ion implant processes were used in this experiment. the results for simox soi samples we got here revealed that all the three structures are valuable for soi electrical characterization and sis structure has irrefragable advantage over the other two structures. the soi transistors have been the key devices for achieving the low voltage operation and low power consumption, because of the small junction capacitance, the small s - factor, and the small substrate bias effect

    這三種模型分別是：第一，將傳統的mos電容結構應用到soi材料上來進行c - v ， i - v測試，分析計算soi材料的重要電學性能參數；第二種，針對soi材料的特殊結構，為了適應生產線上對無損soi園片進行電學性能測試的要求，應用mosos結構來對soi材料進行電學性能表徵。
  5. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  6. We apply the agrawal ' s theory model of soa, and study the temporal characteristics of the output pulse for input picosecond optical pulses with different sharpness edges passing through a semiconductor optical amplifier, and find that the peak power and the pulse width of the output pulse depend on the input pulse peak power, the sharpness degree of the input pulse edge and the bias current of soa

    本文應用agrawal的關于soa理論模型，詳細研究了具有不同陡峭邊沿的皮秒超高斯光脈沖經soa后的時域特性的變化，發現輸出脈沖的峰值功率、脈沖寬度與輸入脈沖的峰值功率、輸入脈沖邊沿的陡峭程度以及soa的偏置電流密切相關。
  7. The components, microstructure, luminousness, thickness and surface topography of the films were analysised via xrd, uv ? vis, xps, ellipsometric examination and stm. the photocatalytic properties of these fims are characterized by the decomposition rate of methylene blue or rhodamine b. the effect of sputtering power, temperature, o2 mass flow, bias, w - doping and sputtering time on photocatalytic properties are discussed

    採用x射線衍射儀、紫外-可見光分光光度計、 x光電子能譜儀、薄膜厚度測試儀及掃描探針顯微鏡等測試手段，研究分析了薄膜的組分、結構、透光率、膜厚和表面形貌等。
  8. In chapter three, the all sub - circuits including uvlo, current bias, ldo, oscillator, green mode, slop compensation, power limiting, pwm, ovp, blanking time generator, logic controller are designed and simulated. as a result, all of the sub - circuits are satisfied the requirements

    本文第三章對集成電路內各個模塊包括欠壓保護、電流偏置、 ldo 、振蕩器、綠色模式、斜坡補償、功率限制、脈寬調制、過壓保護、前沿消隱、邏輯控制電路等進行了設計與模擬，且達到了預定的設計目標。
  9. Ppfc working principle, circular current and effects of clamping capacitor are studied in this paper in detail. because of the clamping capacitor, ppfc have some good features compared with ppc : reducing the fluctuate of the input current ; restraining the voltage spike of the power mosfet ; avoiding the bias - magnetic of the transformer

    由於箝位電容的加入，相對于推挽電路而言，該拓撲具備了一些獨特的優點：減小了輸入電流的脈動：削弱了開關管的關斷電壓尖峰；有效抑制了變壓器的偏磁。
  10. Process parameters included rf power, substrate negative bias voltage, substrate temperature and working gas pressure

    工藝參數有射頻功率、襯底負偏壓、襯底溫度和工作氣壓等。
  11. It is ideal for ate and production test environments, where it can supply bias power and stimulus to subassemblies and final products

    它很適合ate與生產測試環境使用，能為副組件與成品提供偏壓電源和激發。
  12. This machine adopts high - level siemens plc concentration control, set up with computer controlled gear shifting vacuum gauge, and a three - flow controller, one set of contra - variant bias power and four - route contra - variant arc power supply, four side - installed heating tubes, computer pid automatic temperature control device, 60 and 100 two kinds versatile arc supply

    該設備採用先進的西門子plc集中控制，裝有電腦自動換檔真空計和三路流量控制器，一套逆變偏壓和四路逆變弧電源，邊裝式加熱管四支，電腦pid自動控溫， 60和100兩種弧源通用。
  13. This machine adopts japanese pro - face touch screen and mitsubishi plc control technology. in addition, it is set with automatic gear - shifting vacuum gauge, a three - flow controller, side - installed heating tube, computer pid automatic temperature control, and two sets of flat magnetic controlled target, contra - variant magnetic - controlled power source, and contra - variant bias power with easy operation and top grade film layer. they are widely used in decorative film layer, and compound film layer in plating

    該設備採用日本pro - face觸摸屏和三菱plc集中控制裝有電腦自動換檔真空計，三路流量控制器，邊裝式加熱管，電腦pid自動控溫，配備兩套邊裝式平面磁控靶，逆變式磁控電源和逆變式偏壓電源，操作簡單，膜層細膩，廣泛適用於鍍制各種裝飾膜層和復合膜層。
  14. This machine adopts japanese pro - face touch screen and mitsubishi plc control technology. in addition, it is set with automatic gear - shifting vacuum gauge, a two - flow controller, side - installed heating tube, computer pid automatic temperature control, and 32 sets contra - variant arc power supply and contra - variant bias power. they are widely used in plating different thick film layers of mono - metal and many compound film layers

    該設備採用日本pro - face觸摸屏和三菱plc集中控制裝有電腦自動換檔真空計，兩路流量控制器，邊裝式加熱管，電腦pid自動控溫，配備32隻逆變式弧電源和逆變偏壓，適用於鍍制各種特種單金屬厚膜層或多鐘金屬復合膜層。
  15. 10 one glower bias power

    10燈絲偏壓一套
  16. 9 intelligent controlled by plc 10 one normal bias power

    10普通偏壓一臺
  17. 7 one suit of bias power supply

    7偏壓電源一套
  18. 8 one suit of bias power

    8工件偏壓一套
  19. 9 one suit of contra - variant bias power and four contra - variant arc power supply, 60 100 arc sources are all suitable

    9一套逆變偏壓和4個逆變弧電源， 60和100兩種弧源通用
  20. 10 one suit of contra - variant bias power and eight contra - variant arc power supply, 60 100 arc sources are all suitable quantity of arc sources can be increased

    10一套逆變偏壓和8個逆變弧電源， 60和100兩種弧源通用弧源數量可增減
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