bias voltage 中文意思是什麼
bias voltage
解釋
蓋環-
Bias voltage, which are related to the superlattice structural paraments, the doped densities and the applied bias voltage. we have also investigated the characteristics of superlattice under hydrostatic pressure by simulations
超晶格的負微分電導區還導致出現固定偏壓下隨時間變化的電流自維持振蕩，振蕩產生的條件依賴于其結構參數，摻雜濃度和外加偏壓的大小。 -
The transformer isolates the transistors with regard to d-c bias voltage.
變壓器可在兩個晶體管之間隔離直流偏壓。 -
It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling. the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad
當氧化層中存在較強電場時，電離輻照對s匯mos電容的影響會更明顯， sicmos器件比st器件具有更好的抗y輻照的能力。 -
Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。 -
The effect of electrostatic force of the drive voltage on the accelerometer had been researched when the bias voltage polarity is positive - negative configuration
前人在研究驅動信號對傳感器的靜電力效應時，用偏置電壓極性為正?負配置的驅動信號進行研究。 -
1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon
研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。 -
The thesis analyses the problems on the noise of apd photoelectric receiving system. author designs apd laser signal receiving system circuits, front amplify circuit, controlling time - series logic circuits, dc / dc transform circuits. and takes apd bias voltage fuzzy control
分析了apd光電接收系統的噪聲問題，並對apd激光信號接收系統電路、前置放大電路、控制時序邏輯電路、 dc / dc變換電路進行了設計，採取了apd偏壓模糊控制。 -
Base on two - stage approach, we adjust experimental parameter to develop a new method ( three - stage approach ) to prepare c - bn thin films. the study proves that it is favorable to prepare bn thin films of high cubic phase content. depositing time and substrate bias voltage in the first stage are 5 min and - 180v respectively
根據si片上bn薄膜的反射光譜r （ ）和熔融石英片上bn薄膜的反射光譜r （ ）和透射光譜t （ ）各自獨立的計算了bn薄膜的光學帶隙，利用兩種方法分別計算立方相含量均約為55 %的bn薄膜的禁帶寬度為5 . 38ev和5 . 4ev ，其結果均和由經驗公式計算得到的結果非常接近。 -
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
Process parameters included rf power, substrate negative bias voltage, substrate temperature and working gas pressure
工藝參數有射頻功率、襯底負偏壓、襯底溫度和工作氣壓等。 -
At 200v of substrate negative bias voltage and 300w of rf power, the content of cubic phase in bn films reaches 92. 8 %
當負偏壓為200v ，功率為300w時，薄膜中立方相的含量達到92 . 8 。 -
For obtaining cbn thin films, it is necessary that substrate negative bias voltage is not lower than 90v and r. f power is not lower than 200w
若要得到立方氮化硼薄膜，負偏壓不能低於90v ，功率不能低於200w 。 -
Substrate negative bias voltage deeply impacts the nucleation and growth of cbn. there is a threshold value of bias voltage for depositing cbn
襯底負偏壓對立方氮化硼的成核和生長有十分重要的影響，存在偏壓閾值，低於該值不能產生立方氮化硼。 -
The enhancement of water wettability, better optical transparency, and higher wear resistance have been found after the samples were treated under high rf power, bias voltage and gas pressure conditions
在較高射頻功率、基板負偏壓、反應氣體壓強狀態下制備膜層的潤濕性、耐磨損性較好，而光學透過率較低。 -
We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5
研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。 -
Either the substrate temperature or the bias voltage as a parameter of particular interest was rised first and reduced after it
偏壓和溫度降由較低的值變為較高的值;而後再將為較低的值。 -
The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power, and analyzes the principles of work, merts and shortcomings of these technologies, based on the absorption of these technologies, it designs a 1. 5v low power rail - to - rail cmos operational amplifier. when designing input stage, in order to enable the input common mode voltage range to achieve rail - to - rail, it does not use the traditional differential input pair, but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure, and uses the proportional current mirror technology to realize the constant transconductance of input stage. in the middle gain stage design, the current mirror load does not use the traditional standard cascode structure, but uses the low voltage, wide - swing casecode structure which is suitable to work in low voltage. when designing output stage, in order to enhance the efficiency, it uses the push - pull common source stage amplifier as the output stage, the output voltage swing basically reached rail - to - rail. the thesis changes the design of the traditional normal source based on the operational amplifier, uses the differential amplifier with current mirror load to design a normal current source. the normal current source provides the stable bias current and the bias voltage to the operational amplifier, so the stability of operational amplifier is guaranteed. the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier
本論文對國內外的模擬低電壓低功耗技術做了廣泛的調查研究，分析了這些技術的工作原理和優缺點，在吸收這些技術成果基礎上設計了一個1 . 5v低功耗軌至軌cmos運算放大器。在設計輸入級時，為了使輸入共模電壓范圍達到軌至軌，不是採用傳統的差動輸入結構，而是採用了nmos管和pmos管並聯的互補差動輸入對結構，並採用成比例的電流鏡技術實現了輸入級跨導的恆定;在中間增益級設計中，電流鏡負載並不是採用傳統的標準共源共柵結構，而是採用了適合在低壓工作的低壓寬擺幅共源共柵結構;在輸出級設計時，為了提高效率，採用了推挽共源級放大器作為輸出級，輸出電壓擺幅基本上達到了軌至軌;本論文改變傳統基準源基於運放的設計，採用了帶電流鏡負載的差分放大器設計了一個基準電流源，給運放提供穩定的偏置電流和偏置電壓，保證了運放的穩定性;並採用了帶調零電阻的密勒補償技術對運放進行頻率補償。 -
Such variations are found that due to applied magnetic field from the substrate. the aspect and brightness of the glow and the self - bias voltage for the target changes significantly
實驗中觀察到，在外加磁場的作用下，等離子體放電的輝光的明亮程度及外貌和靶面自偏壓發生了明顯變化。 -
The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage
利用掠入射x射線分析（ gixa ）技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射（ saxs ）技術測量了薄膜的厚度;採用原子力顯微鏡（ afm ）觀察了薄膜的表面形貌;運用能量損失譜（ eds ）及x射線熒光光譜（ xrf ）對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。 -
A driving signal with a dc bias voltage and ac voltage is usually necessary for sensing very small capacitance. the reliable operation conditions of the capacitive sensor for foreign acceleration had been researched with the assumption of the parallel comb plates. but the comb plates are actually not parallel for the reason of the drie process
前人在研究外界加速度信號對傳感器的作用時，假定驅動信號產生的靜電力作用在平行梳齒電容極板上，但是，在用drie工藝對硅進行刻蝕時會產生側蝕效應，從而得到的梳齒電容有一定的傾斜角度。
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