bipolar devices 中文意思是什麼
bipolar devices
解釋
雙極裝置-
Semiconductor devices - part 7 : bipolar transistors
半導體裝置.第7部分:雙極晶體管 -
The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes
本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。 -
Using two - dimensional numerical simulation software, analyze the affect of isolated - trench ' s parameters on the breakdown voltages of three - class bipolar power devices ( whose ideal breakdown voltages correspond to 40v, 70v and 100v ), which include width, depth, isolated material ' s dielectric constant, fixed interface - charge and field plate located at the top of deep - trench termination
利用二維數值模擬軟體分析了影響三類典型應用的雙極功率器件（對應的理想擊穿電壓bv _ （ cro ）分別為： 40v ， 70v ， 100v ）擊穿電壓的諸多因素（主要包括阱寬度、阱深度、阱內填充介質、界面固定電荷、阱區頂端場板） 。 -
High frequency switching technique is becoming more popular in the power electronics area, the high frequency power transistors are applied in the buck - boost type chopper system. the characteristics of power mosfet and insulated gate bipolar transistors ( igbt ), some new kinds of power swithing devices, are deeply studied
高頻開關技術是當今電力電子技術發展的方向，本文研究的buck - boost斬波系統中採用了高頻功率器件，所以本文對新型開關器件? ?功率mos場效應管[ mosfet ]和絕緣門極晶體管[ igbt ]的特性進行了初步研究。 -
Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section 4 : blank detail specification for case - rated bipolar transistors for high - frequency amplification
半導體器件.分立器件.第7部分:雙極晶體管.第4節:高頻放大雙極晶體管的空白詳細規范 -
Semiconductor devices - discrete devices. part 7 : bipolar transistors. section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification
半導體器件分立器件第7部分:雙極型晶體管第四篇高頻放大管殼額定雙極型晶體管空白詳細規范 -
Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification
半導體器件.分立器件.第7部分:雙極性晶體管.第1節:低頻和高頻放大用的額定環境晶體管的空白詳細規范 -
Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications
電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管 -
Recent progress in sige materials and relevant bipolar devices
材料及其在雙極型器件中的應用 -
High - frequency and microwave bipolar power devices have been largely applied in military and civil electronic equipment, mainly in communication, radar ( including navigation ) and electron - confrontation field
雙極高頻、微波功率器件已大量應用於軍用、民用電子設備中，其典型應用主要在通信、雷達（含導航）和電子對抗等領域。 -
Semiconductor devices - discrete devices - bipolar transistors for power switching applications
半導體器件.分立器件.電開關裝置用雙極晶體管 -
In order to improve bipolar power devices " reliability, propose not - uniform two - direction ballasting technology and overload - temperature defending technology with v - class thermistor film
為提高雙極功率器件的可靠性，提出了非均勻雙向鎮流技術和v系熱敏電阻過溫保護技術。 -
Semiconductor devices - integrated circuits - part 2 : digital integrated circuits - section one - blank detail specification for bipolar monolithic digital integrated circuit gates excluding uncommitted logic arrays
半導體器件集成電路第2部分:數字集成電路第一篇雙極型單片數字集成電路門電路 -
Semiconductor devices - discrete devices. part 7 : bipolar transistors. section one - blank detail specification for ambient - rated bipolar transistors for low and high frequency amplification
半導體器件分立器件第7部分:雙極型晶體管第一篇高低頻放大環境額定的雙極型晶體管空白詳細規范 -
Semiconductor devices ; integrated circuits ; part 2 : digital integrated circuits ; section 1 : blank detail specification for bipolar monolithic digital integrated circuits gates excluding uncommitted logic arrays
半導體器件.集成電路.第2部分:數字集成電路.第1節:雙極整體數字集成電路門 -
Specification for harmonized system of quality assessment for electronic components - semiconductor devices - integrated circuits - blank detail specification - bipolar monolithic digital integrated circuit gates excluding uncommitted logic arrays
電子元器件質量評定協調體系.半導體器件.集成電路.空白詳細規范.雙極單片式數字集成門電路 -
Discrete semiconductor devices and integrated circuits - bipolar transistors
分立半導體器件和集成電路.雙極晶體管 -
Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification
電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.低頻和高頻放大用環境溫度額定雙極晶體管 -
Specification for harmonized system of quality assessment for electronic components - semiconductor devices - integrated circuits - blank detail specification - integrated circuit fusible - link programmable bipolar read - only memories
電子元器件質量評定協調體系規范.半導體器件.集成電路.空白詳細規范:集成電路熔斷絲可編程序雙極只讀存儲器 -
Igbts semiconductor devices - discrete devices - insulated - gate bipolar transistors
半導體器件.分立器件.絕緣柵雙極晶體管
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