bipolar semiconductor 中文意思是什麼

bipolar semiconductor 解釋
雙極半導體
  • bipolar : adj. 1. 【電學】兩極的，雙極的。2. 有兩種相反性質[見解]的。3. 關于或涉及地球兩極地區的。n. -ity
  • semiconductor : n. 【物理學】半導體。
  1. Semiconductor devices - part 7 : bipolar transistors

    半導體裝置.第7部分:雙極晶體管
  2. Semiconductor, diodes, bipolar junction transistors, field - effect transistors, transistor amplifiers, frequency response, operational amplifiers, differential and multistage amplifiers, integrated circuits

    半導體、二極體、雙極電晶體、場效電晶體、電晶體放大器、頻率響應、算放大器、差動及多極放大器、積體電路。
  3. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section 4 : blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件.分立器件.第7部分:雙極晶體管.第4節:高頻放大雙極晶體管的空白詳細規范
  4. Semiconductor devices - discrete devices. part 7 : bipolar transistors. section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件分立器件第7部分:雙極型晶體管第四篇高頻放大管殼額定雙極型晶體管空白詳細規范
  5. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification

    半導體器件.分立器件.第7部分:雙極性晶體管.第1節:低頻和高頻放大用的額定環境晶體管的空白詳細規范
  6. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications

    電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管
  7. Semiconductor devices - discrete devices - bipolar transistors for power switching applications

    半導體器件.分立器件.電開關裝置用雙極晶體管
  8. Semiconductor devices - integrated circuits - part 2 : digital integrated circuits - section one - blank detail specification for bipolar monolithic digital integrated circuit gates excluding uncommitted logic arrays

    半導體器件集成電路第2部分:數字集成電路第一篇雙極型單片數字集成電路門電路
  9. Semiconductor devices - discrete devices. part 7 : bipolar transistors. section one - blank detail specification for ambient - rated bipolar transistors for low and high frequency amplification

    半導體器件分立器件第7部分:雙極型晶體管第一篇高低頻放大環境額定的雙極型晶體管空白詳細規范
  10. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
  11. Semiconductor devices ; integrated circuits ; part 2 : digital integrated circuits ; section 1 : blank detail specification for bipolar monolithic digital integrated circuits gates excluding uncommitted logic arrays

    半導體器件.集成電路.第2部分:數字集成電路.第1節:雙極整體數字集成電路門
  12. Specification for harmonized system of quality assessment for electronic components - semiconductor devices - integrated circuits - blank detail specification - bipolar monolithic digital integrated circuit gates excluding uncommitted logic arrays

    電子元器件質量評定協調體系.半導體器件.集成電路.空白詳細規范.雙極單片式數字集成門電路
  13. Discrete semiconductor devices and integrated circuits - bipolar transistors

    分立半導體器件和集成電路.雙極晶體管
  14. There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication

    目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。
  15. Well, cmos complementary metal - oxide semiconductor chips use metal - oxide semiconductor field effect transistors mosfets. these are fundamentally different from bipolar transistors

    哦， cmos （互補金屬氧化物半導體）晶元使用金屬氧化物半導體場效應晶體管（ mosfet ） ，顯然它是一種fei （場效應晶體管） 。
  16. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
  17. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification

    電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.低頻和高頻放大用環境溫度額定雙極晶體管
  18. Specification for harmonized system of quality assessment for electronic components - semiconductor devices - integrated circuits - blank detail specification - integrated circuit fusible - link programmable bipolar read - only memories

    電子元器件質量評定協調體系規范.半導體器件.集成電路.空白詳細規范:集成電路熔斷絲可編程序雙極只讀存儲器
  19. Igbts semiconductor devices - discrete devices - insulated - gate bipolar transistors

    半導體器件.分立器件.絕緣柵雙極晶體管
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