bjt 中文意思是什麼

bjt 解釋
電晶體
  1. Bipolar junction transistor - bjt

    雙極結型晶體管
  2. Bipolar junction transistor, bjt

    雙載子晶體管
  3. After introduction of the tranlinear loop principal, the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower. as for modern integrated circuit, the model of mos transistor, the active resistance and the current mirror integrated circuit formed by mos transistor are introduced. the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation

    針對現代集成電路的工藝，本文對mos晶體管的工作原理進行了簡要的敘述，討論了有源電阻和電流鏡的實現方法，並利用mos晶體管的亞閾值特性組成混合跨導線性迴路完成對應的電壓跟隨器的設計，推導出了基於cmos技術的電流控制傳送器。
  4. Then we studied the bmhmt method of soi mosfet and its merit : larger drive current which enables it to be the candidate of bjt in realizing bicmos circuits

    之後我們研究了soimosfet的bmhmt工作模式，同時介紹了這種工作模式的優點:驅動電流大，可替代bicmos電路中的三極晶體管實現bicmos電路。
  5. Y. r. yang, c. l. chen, " steady - state analysis and simulation of a bjt self - oscillating zvs - cv ballast driven by a saturable transformer, " ieee trans. industrial electronics, vol. 46, no. 2, pp. 249 - 260, april 1999

    楊岳儒，陳秋麟，林昌賢「自激串振式半橋型電子安定器電路分析」工研院能資所電力電子技術雙月刊，第24期，第45 - 53頁， 1994年12月。
  6. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
  7. There are three power transistor which have been widely used in s band now : bipolar junction transistor ( bjt ), gaas metal - oxide semiconductor field effect transistor ( gaas mosfet ) and lateral diffuse metal - oxide semiconductor field effect transistor ( ldmos fet ). thanks to the advantages, such as, wide frequency, easy power supply, good stability, the ldmos fet has used in the motion telecommunication

    目前在s波段人們常用的放大器有雙極性晶體管（ bjt ） 、砷化鎵場效應晶體管（ gaasmosfet ） 、邊緣擴散場效應晶體管（ ldmosfet ）等，由於ldmosfet具有頻帶寬、供電方便、穩定可靠等優勢，目前已經廣泛用於移動通信3g的研究。
  8. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
  9. In bjt devices, a small current flow at the base moderates a much larger current between the emitter and collector

    在bjt器件中，基極小的電流調節發射極和接收極之間大得多的電流。
  10. By improving the process technologies, si - based active devices, for example, mosfet ' s and bjt ' s et al, demonstrate an extremely high f, f and fmax, which is sufficient for radio frequency ( rf ) / microwave applications

    對硅基有源器件，如mosfet 』 s和bjt 』 s等，通過改進工藝技術，可以得到很高的特徵頻率f _ t和振蕩頻率f _ （ max ）性能，能夠滿足射頻微波應用的要求。
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