breakdown effect 中文意思是什麼
breakdown effect
解釋
擊穿效應-
Rat cumulus - enclosed oocyte ( ceo ) and denuded oocyte ( do ) both spontaneously resume meiotic maturation in vitro, when cultured for 2h, the germinal vesical breakdown percentage of do reaches up to 88 %, and ceos get 53 %. oocytes begin to extrude first polar body 1 ( fb1 ) when cultured for 8h. mouse oocyte spontaneous maturation in vitro can be inhibited by 4mm hypoxanthine ( hx ) or 25um 3 - isobutyl - methylxanthine ( ibmx ). while, 4mm hx can not inhibit the spontaneous maturation of rat oocyte, and the lowest effective concentration of ibmx to inhibit rat oocyle spontaneous maturation in vitro is 50um. treated with the same concentration of ibmx, gvbd percentage of rat ceo is lower than that of do, the results indicat that cumulus cells delay rat oocyte spontaneous maturation and potentate the inhibition effect of ibmx, but it ' s not the case on mouse
Ceo和do培養8h時都開始排出pb1 ；在卵母細胞成熟抑制模型中， 4mm次黃嘌呤（ hx ）和25 m的異丁基甲基黃嘌呤（ ibmx ）是小鼠卵母細胞成熟的有效抑制劑，但4mm的hx抑制大鼠卵母細胞成熟效果不理想，用hx - m199和hx - mem培養24h ， gvbd率分別為61 ， 81 ，而ibmx有效抑制大鼠卵母細胞自發成熟的最小濃度為50 m ， ibmx可以降低大鼠ceo和do的gvbd率，但ceo中的卵母細胞gvbd率要顯著低於do的gvbd率， 100 m的jbmx處理24h后，大鼠ceo和do的gvbd率分別為24 ， 84 ，提示卵丘細胞的存在可以延遲大鼠卵母細胞的自發成熟，有助於抑制卵母細胞成熟，但在小鼠上ceo和do的自發成熟差異不明顯。 -
Effect of apex flap length on leading edge vortex breakdown over delta wings
三角翼前緣渦破裂形式及特性研究 -
Effect of the apex flap on the leading edge vortex breakdown over a 70 176 ; delta wing
尖頂襟翼對70 176 ;三角翼前緣渦破裂的影響 -
In this dissertation, the pulse jet style, the influence on the shock wave, the flow in the tube and the cooling effect was deeply studied theoretically and experimentally. the influence of the pulse jet style on the forming of shock wave and the shock wave intensity was explored. the initial disconnection style in oscillating tube vented and the initial disconnection breakdown was proposed by different pulse jet style
本文對脈動射流的型式及其對激波、管內流動及冷效應的影響進行了較系統的理論和實驗研究，主要包括:探討了脈動射流的型式對形成管內激波形成及激波強度的影響，給出了不同脈動射流的型式下振蕩管開口端初始間斷的類型，對初始間斷進行了分解，導出了包含進氣、排氣參數及工質物性參數的管內入射激波馬赫數mj的表達式，給出了管內激波形成的三種原因及其所對應的脈動射流型式和具體的工作狀態。 -
The results showed that with the increase of the field strength, the conduction of the films was separately dominated by ohm ' s law, schottcky effect, pool - frenkel effect, and fowler - nordheim tunneling breakdown
結果顯示，隨著場強的增加，導電機制分別以歐姆定律、肖特基效應、普爾弗蘭凱爾效應，和f - n為主，最後發生f - n擊穿。 -
According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。 -
The growth rate of inflectional instability and viscous instability also saturate similarly to the primary and nonlinearly generated disturbances. the main effect of inflectional instability mode in the final breakdown seems to interact with the disturbances having developed and thus widens the frequency spectrum to turbulent state
屬于拐點不穩定性的高頻二次不穩定模態對最後轉捩的影響主要體現在與其它擾動的相互作用，並導致出現紊流狀態寬帶頻譜。 -
And then some terminal techniques on pic, devices simulation theory, resurfs effect and medici software are presented. at last three kinds of high voltage power devices have been designed and simulated. based on the analysis of the breakdown voltage and electric field distribution of the high power devices, the key physics and structural parameters effects on the breakdown voltage are found
本文首先介紹了國內外功率集成電路的發展狀況，然後介紹了高壓集成電路中的幾種終端技術、 resurf效應、器件模擬的基本理論和medici器件模擬軟體，最後對三種型號的高壓功率器件的擊穿特性進行了分析和計算機模擬，指出了影響器件電壓的關鍵的物理和結構參數，並對這三種型號的器件進行模擬，得出的電特性曲線和參數基本上與公司給出的一致。 -
This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide, and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s
本文對超薄柵氧化層經時擊穿（ tddb ）擊穿機理和可靠性表徵方法以及深亞微米mos器件熱載流子效應（ hce ）進行了系統研究。 -
It also has short protection and voltage overshot protection block. devices and ics based on esoi have the advantages of not only cheaper substrate, good performance of soi technology, but also obtaining a certain breakdown voltage and optimization of self - heating effect
基於esoi的器件及集成電路不僅襯底材料制備工藝簡單，硅層厚度均勻性好，器件及電路特性具有soi結構的優點，而且還兼顧一定的耐壓，對自加熱效應也得到優化。 -
As to the video signal, alarm signal, control signal, are all weak electricity signal, exceedingly easily be subjected to the jam, in case the power supply system does not steady, wave propag ation is greatly, the harmonic content of power source overtops, the veins wave factors are great unduly, and even power source equipment breakdown, outputting abnormal, will be about to affect the video signal image effect, and dependability cuts downs to the security and alarming system. we adopt fast fu lye ' s mutation rule - fft alternatives, by the way of carrying fft alternatives to the local junction circuit, regulated power supply, ups ' s power source, and switch power source, thereby diagnose every degree harmonious wave content of power souse, and abnormal coefficient, compared to the normal working situation. thereby diagnose out the working condition of the regulated power supply, ups ' s power source, and switch power source
如果有供電系統不穩定、波動大，電源的諧波含量過高，紋波系數過大，乃至電源設備損壞、輸出異常等情況出現，將會嚴重影響視頻信號的圖像效果，大大降低防盜系統的穩定性和可靠性，我們採用快速傅利葉變換原理，即fft變換，通過對市電、穩壓電源、 ups電源、開關電源等的電壓信號進行fft變換，從而得出信號中各次諧波的含量及信號畸變系數，並將其與正常工況下的參數進行對比，從而進一步診斷出穩壓電源、 ups電源、開關電源等設備的運行狀況；組成監控系統的設備長期處于工作狀態，往往由於設備散熱條件不好、設備老化故障等原因導致設備表面溫度過高，從而影響設備的正常運行，降低設備的使用壽命。 -
The device structure and physical models of 4h - sic mosfet and mesfet are built and the properties are simulated with the use of medici software. the influence of the temperature and structure parameter on the device ' s properties is summarized indicates that no negative resistance exists in breakdown property and the breakdown voltage is up to 85v and 209v separately. the maximum power density of 4h - sic mesfet is as high as 19. 22w / mm. at the same time, the processes of sic field - effect transistor is studied and the fabrication processes suitable to sic mosfet are developed.
論文分析建立了4h - sicmosfet和mesfet器件的結構模型和物理模型，採用二維器件模擬軟體medici對4h - sicmosfet和mesfet的輸出特性進行了模擬分析，研究了溫度和結構參數對器件特性的影響，表明兩種器件的擊穿特性均沒有負阻現象，擊穿電壓分別達到85v和209v ，由此得到4h - sicmesfet最大功率密度可達到19 . 22w mm ；同時，研究了sic場效應晶體管的製作工藝，初步得到了一套製造sicmosfet器件的製造工藝流程，研製出了4h - sicmosfet器件。 -
The research of the effect of soi s - resurf included the impact of the geometry parameters and drift doping concentration on breakdown voltage and on - resistance
Soisingle - resurf效應研究。研究了soisingle - resurfldmos的器件參數對擊穿電壓和導通電阻的影響。 -
Cassava root is used for carbohydrate source in tropical region. quality of cassava starch is variable and affected by many factors. an attempt was made to evaluate the effect of peeling, washing and drying on starch purity and starch paste viscosity. paste viscosity were based on results of rapid visco analysis ( rva ). the results of this study revealed that : peeling, washing and drying temperature significantly affected cassava starch purity and starch paste viscosity. the starch from unpeeling root had a dullness color, but had higher peak viscosity, trough, final viscosity, breakdown and setback than that of starch from peeling root. more washing not only increased starch purity, but also improved starch past characteristics, such as peak viscosity, trough, final viscosity, setback and pasting temperature. different drying temperature had no effect on starch whiteness. starch purity had a little increase with drying temperature increasing. in general trend, starch dried at higher temperature had higher peak viscosity, trough, breakdown, final viscosity and higher setback
木薯在熱帶地區是碳水化合物的主要來源.木薯澱粉的品質受許多因素的影響.本項研究著重探討澱粉提取過程中，削皮、水洗、乾燥溫度對澱粉純度、白度和澱粉糊化粘度的影響.結果表明，未削皮的澱粉樣品色發灰，但具有比削皮處理高的峰值粘度、 95最後粘度、 50時粘度、峰值降和持久性.增加水洗次數，不但能增加澱粉純度，還可提高澱粉高峰值粘度、 95最後粘度、 50時粘度、持久性和糊化溫度.不同乾燥溫度對澱粉白度無影響，但澱粉純度隨乾燥溫度的提高而稍稍增加.通常高的乾燥溫度有高的峰值粘度、 95最後粘度、峰值降、 50時粘度和持久性 -
Once the original manufacturer s warrant expires, extended warranty protection takes effect. each platinum card account is allowed a maximum of hk 150, 000 worth of cover per policy year. the warranty covers the cost of labor and parts used to repair any breakdown or malfunction covered by the terms of the original warranty
延長保養服務在原廠製造商的保養期屆滿后即時生效每年度每一會員賬戶保障總額為hk 150 ， 000 ，而每件商品最高保額為hk 40 ， 000 。
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