buffer gas 中文意思是什麼

buffer gas 解釋
緩沖氣體
  • buffer : n 1 【機械工程】緩沖器,緩沖墊;阻尼器,減震器;消聲器。2 【化學】緩沖,緩沖劑。3 緩沖者;緩沖物...
  • gas : n (pl gases )1 氣,氣體,氣態 〈cf fluid; solid〉 2 可燃氣,煤氣,沼氣;【礦物】瓦斯。3 【軍事...
  1. In pumping fluid with gas, pressure boost can be improved by enhancing the pump rotation speed, thereby improving the performance of the pump to a certain degree ; when the gas content is constant, by increasing the inlet pressure, the pressure boost can be enhanced and the pump efficiency be improved remarkably ; when the gas content is rather high, there will be a problem of matching between the gas pressure and the fluid pressure ; the performance of the multiphase pump can also be improved by means of rational design of buffer vessel and homogenizer

    試驗分析認為,氣液混輸工況下,提高泵轉速可以提高增壓,在一定程度上能改善多相泵的工作性能;含氣率一定時,增加進口壓力,可使多相泵增壓值增大,泵效明顯增加,最大含氣率點后移,但含氣率很高時,存在氣液壓力相匹配問題;改進緩沖罐和均化器的設計,有利於氣液互相夾帶,避免氣囊產生,可改善多相泵的輸送性能。
  2. The quality of buffer layer and thin films was analyzed by afm, xrd, rheed and xps respectively. the effect of the experimental parameters such as carbonization time, working pressure, c source gas flow rate, carbonization temperature, different carbonization gas and substrate on the carbonization process was studied firstly. it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite, but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too, and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low, but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough, and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature, the size of particles was increased, the rms is decreased and a good single - crystalline carbonization layer could be obtained, but a rough surface was formed at a excessive high temperature ; the rms of

    對于碳化工藝,側重研究了碳化時間、反應室氣壓、 c源氣體的流量、碳化溫度以及不同種類的c源氣體、基片取向等因素對碳化層質量的影響,研究結果表明:隨著碳化時間的增長,碳化層的晶粒尺寸隨之變大,表面粗糙度隨之降低,但當碳化到一定時間之後,碳化反應減緩,碳化層的晶粒尺寸以及表面粗糙度的變化幅度變小;碳化層的晶粒尺寸隨反應室氣壓的升高而變大,適中的反應室氣壓可得到表面比較平整的碳化層;在c源氣體的流量相對較小時,碳化層的晶粒尺寸隨氣體流量的變化不明顯,但當氣體流量增大到一定程度時,碳化層的晶粒尺寸隨氣體流量的增大而明顯變大,同時,適中的氣體流量得到的碳化層表面粗糙度較低;碳化溫度較低時,碳化層的晶粒取向不明顯,隨著碳化溫度的升高,碳化層的晶粒尺寸明顯變大,且有微弱的單晶取向出現,但取向較差,同時,適中的碳化溫度可得到表面平整的碳化層;相比于c _ 2h _ 2 ,以ch _ 4作為c源氣體時得到的碳化層表面平整得多;比起si ( 100 ) ,選用si ( 111 )作為基片生長的碳化層的晶粒取向一致性明顯更好。
  3. The result shows that multiple inlet is better than single inlet, and that inlet with buffer is better than that without buffer. other optimal design structures are also adopted. the gas manifold with optimal structure make oxygen much evener for each cell

    結果表明多進口比單進口,有)比無隔板、擴壓型進口比非擴壓型進口、橢圓臺進口比圓臺進口的進氣箱結構更易實現電池堆中每個單電池進氣量的均勻化。
  4. Zno thin films were deposited on silicon ( si ) and glass substrate by reactive radio frequency sputtering ( rf ) technique with zinc target in the mixed gas of ar ando2, and used zno buffer improving the quality of zno thin film. the effects of parameters on the thickness, composition, texture, morphology, optical properties and electrical properties of zno thin films had been systematically investigated by means of xrd, xps, sem, afm, pl and hall test system

    採用x射線衍射( xrd ) 、 x射線光電子能譜( xps ) 、掃描電子顯微鏡( sem ) 、原子力顯微鏡( afm ) ,光致發光譜( pl )和霍爾效應測試技術系統研究了濺射工藝和退火工藝對zno薄膜的厚度、成分、織構、表面形貌、光學性能和電學性能的影響規律。
  5. With the basic theory of air buffer, aiming to the key segment for modeling - flow equation and gas buffering process, theoretical analysis with experimental data is helpful to realize the modeling and simulation research. 3

    介紹了氣動緩沖的基本理論,通過機理分析建立了被研究對象的數學模型,針對建立精確數學模型的關鍵環節? ?流量方程和氣動緩沖過程,提出機理分析與實驗建模相結合的建模方法,並進行了模擬和實驗研究; 3
  6. ( 5 ) the intensity and s / b of libs are investigated in detail at the different buffer gas, gas pressure, and laser power. the results show that under the 120 mj laser energy, for ar the best s / b is at 200 torr pressure, but for air at 100 torr and he at 300 torr. duration of atomic spectra in ar is longer than that in air

    ( 5 )實驗測定了不同的緩沖氣體和氣壓以及不同的入射激光脈沖能量對原子譜線強度和背景光的影響,結果顯示在氬氣環境下,當氣壓約為200torr 、激光的能量約為120mj時, libs的s b最大;在空氣和氦氣中獲得最佳s b時的氣壓約分別為100torr和300torr ;原子譜線在氮氣環境中持續的時間要比在空氣中持續的時間長。
  7. Influence of buffer gas in the hcd lamp upon the line strength of the rare - earth element

    燈中的載氣對稀土元素譜線強度的影響
  8. The following equipment need buffer room ( the buffer room is used for safe cabinet of gas cylinder and noisy compressor and keeping cleaner ) : aas, afs, gc - ms, and lc - ms

    5需要設緩沖間的儀器(緩沖間用來放置安全氣櫃瓶和有噪聲的壓縮機以及保持清潔)原子吸收,原子熒光,氣相色譜質譜,液相色譜質譜。
  9. If it is possible, the rooms for gc, icp, icp - ms should have a buffer area for gas cylinder cabinet and noisy compressor storage ; thereby the buffer room will keep the inner area of the room clean

    建議有條件的情況下,氣相色譜、等離子體發射光譜、等離子體質譜也應建立緩沖間,緩沖間用來放置安全氣瓶櫃和有噪聲的壓縮機以及保持清潔) 。
  10. Abstract : the method of using formaldehyde buffer solution a b sorption - hydrochloric pararosaniline spectrophotometry to determine sulfur diox ide in air has higher sensitivity and good selectivity, and prevents from adoptin g mercurial absorbent. but the conditions in lab are not well controlled, the v alue of reagent blank and standard curvilinear slope can ' t accord with the one s tipulated in “ methods for air and waste gas monitoring and analysis ”. some opra tional techniques for so2 determination in lab are introduced for reference

    文摘:以甲醛緩沖溶液吸收-鹽酸副玫瑰苯胺分光光度法測定空氣中的二氧化硫,方法靈敏度高,選擇性好,避免了使用含汞的吸收液,但如果實驗條件控制不好,試劑空白值及標準曲線的斜率就會不符合《空氣和廢氣監測分析方法》中規定的值,本文著重從操作技巧方面對二氣化硫測定的實驗室質量控制進行分析,僅供參考。
  11. The discussion of the calibration curves concludes that the calibration curves with the ar buffer gas are more accurate than those with the others ; ( 3 ) the curve characteristics are discussed and concluded

    對定標曲線的討論結果表明,在氟氣環境中得到的定標曲線比其他三種環境中的定標曲線具有更好的精確性。
  12. In this thesis, the cvd technique and “ two - step growth process ” were used to deposit the 3c - sic films, that was to carbonize si substrate in carbide gas atmosphere first in order to form a buffer layer, then deposited the 3c - sic films on this buffer layer

    本論文採用cvd方法,並結合「兩步生長工藝」進行3c - sic的異質外延生長。即:首先將si基片碳化,形成一個碳化緩沖層,然後再在此緩沖層上異質外延生長3c - sic薄膜。
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