buried channel 中文意思是什麼
buried channel
解釋
地下管溝-
A land drain is usually a pipe buried in farm land but it may also be an open channel.
農田的排水系統通常是埋在農田中的管子，但也可以是明渠。 -
Gpr is a newly developed hi - tech survey technique used to detect shallow ground electric differences. we applied gpr to more than 100 projects in zhujiang river delta and hongkong, and obtained good reputations. the application scope involves stratigraphics division, outining of filled stones in the muddly beach, geotechnical prospecting of old wall, karst detecting in the limestone terrain, caving detecting, landslide and slop surveing, the division of wea - thering zone, onion weathering zone, fracture zone and fau - lted zone in the granite area, detecting of buried objects cable, metal nonmetal pipe, channel, air raid she - lter etc. underground in the urban city, archaeology, tracing of orebody, coal measures strata division, testing of the dam and grouting site, quality checking of the surface and foundation of the highway
的一種高新技術。我公司運用世界最先進的探地雷達設備在珠江三角洲地區和香港開展了百余項探地雷達檢測項目，獲得了良好的聲譽，並被作為深圳市建設局1998年度建設科技成果推廣項目。它主要應用於：山體土石方檢測路基不同回填物界面檢測填海回填物巖溶檢測樁基無損檢測地下管道探測地下隱蔽物探測考古斜坡滑體探測地質結構探測湖底探測高速公路路面及路基檢測。 -
Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design
根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。 -
Feasibly experimental projects of fabricating buried waveguides by field - assisted ion - exchanged technology using this equipment were designed. used thermal ion - exchange and the silver film ion - exchange technology, the planar and channel waveguides were fabricated
在實驗室允許的條件下，採用ag膜電場輔助離子交換和熔鹽離子交換法對鉺鐿共摻磷酸鹽玻璃平板波導和溝道波導進行了製作。 -
After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。 -
The article set up 2 - dementional steady heat conduction model and equations based on buried channel waveguide, and solved the equations by separating variables method. using mathcad, 2 - d temperature distribution and the influenced refractive index distribution by thermo - optic effect were plotted in waveguide section area
本文先以埋入式溝道波導為例，建立了二維穩態熱傳導方程模型，用分離變量法推導了方程解，並用mathcad2000在波導截面上繪出了二維溫度分布圖和受到熱光效應影響的折射率分布圖。 -
At last, a buried - channel ccd ( bccd ) is simulated by the developed software. the influences of some parameters such as the gate length, the gap width between the gates and the depth of the channel to the performance as charge handling capacity and charge transfer efficiency of the bccd are discussed. and the dark current is also analyzed
最後利用該軟體實際模擬了電注入的埋溝ccd器件，詳細討論了柵長，柵間隙寬度和埋溝深度等參數對該結構ccd的電荷容量和轉移效率的影響，同時，還分析了少子壽命對暗電流的影響。 -
Buried - channel charge - coupled device bcc
埋設通道電荷耦合裝置 -
Besides this, a bypass multi - mode waveguide were used to improve attenuation efficiency and reduce power consumption. based on buried channel structure, the simulation software beamprop ? produced by rsoft corp shows some better results than the original device : attenuation range over 20 higher, insertion loss merely 1db higher and the calculated power consumption is only 25mw
加入的旁路吸收波導和多模區間距為零時最大衰減對應的溫度為60 ，衰減增加了20db以上，功耗也增加了1倍，插入損耗比間距為1 ， 2 m時增加約0 . 4db ，比沒有旁路波導時插入損耗增加了約ldb 。
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