buried oxide 中文意思是什麼
buried oxide
解釋
隱埋氧化物-
Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation
採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。 -
The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer
模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。 -
Charge qs was located near the interface of silicon and oxide. with more charge, the field of buried oxide was improved up to the critical breakdown field basis on entirely continuity of electric displacement vector, and then the vertical breakdown voltage was raised. the comparisons between analytical and simulative results proved its availability of this model to interpret the vertical blocking mechanism
該模型認為，將界面電荷qs引入i層si / sio2的si界面，根據電位移矢量的全連續性，界面電荷qs越多，使i層內電場增加，直至sio2的臨界電場，從而提高縱向擊穿電壓vb . v ，很好得解決了器件的縱向耐壓問題。 -
Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design
根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。 -
Buried oxide layer ( box ) - the layer that insulates between the two wafers
氧化埋層（ box ） -在兩個晶圓片間的絕緣層。 -
In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose
本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。 -
After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。 -
The electrical parameters of buried oxide and interface state in soi structures influence the performance, reliability and the radiation hardness of devices fabricated in the superficial silicon film
完成了存儲陣列，控制電路，外圍電路的時序設計，原理圖設計，版圖設計，並且通過了drc ， lvs檢查。
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