c-film 中文意思是什麼

c-film 解釋
滌綸電容
  • c :
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. C ： i see, thank you. please give me three rolls of colour film

    原來如此，謝謝你。請給我三卷彩色菲林。
  2. Ceo22 is used as optical materials, polishing agents, ultraviolet absorption materials, the cleaning catalyst of car ' s waste gases, chemical decolorant of glass, radiation - resisting glass permanent magnet, electronic ceramics etc. if it is processed into nanoparticles, it will exhibit some novel properties led to varied applications. for example, ceo22 nanocrystal is a better promoter of cytochrome c and the stabilizer of zro22 ceramics. because of its high index of refraction and good stability, it is used to produce reduced reflection film

    Ceo _ 2是一種廉價而用途極廣的材料，如用於發光材料、拋光劑、紫外吸收材料、汽車尾氣凈化催化劑、玻璃的化學退色劑、耐輻射玻璃、永磁體、電子陶瓷等，其納米化后將出現一些新的性質及應用，如ceoz納米晶是細胞色素c的良好的催進劑，還用作zro :陶瓷的穩定劑，由於ceo :折射率高，穩定性好，常用於制備減反射膜等。
  3. Co - producer douglas gresham is the stepson of c. s. lewis, author of the novel upon which the film is based

    本片的副製片道格拉斯?格雷斯漢姆是原書作者c . s ?劉易斯的繼子。
  4. By analysising the thin film system, polarization and absorption of material, the relation ship between these parameters and the chroma of the light engine system is built. then a programm is writen in c + + language to realize the method

    通過分析該系統從光源到分色合色和投影鏡頭的膜系結構，偏振特性，材料吸收等對系統能量分佈的影響，建立了各個參數與系統色度之間的關系。
  5. ( 5 ) glassy oxide film of samples processed by mevva al / piid si covered the surface of sic coating thickly and uniformly, and left few holes as a result of a good ability of sealing, which made weight loss of sic - c / sic smaller in air at1300

    （ 5 ） mevva源注入al再piid （等離子源全方位沉積） si塗層，玻璃氧化層厚而均勻，愈合性能好，孔洞少，對塗層缺陷有最佳的改性效果。復合材料在1300空氣中的氧化失重顯著降低，甚至出現增重。
  6. The iron doped tio2 thin films showed almost no photocatalytic activity for the photodegradation of no in the gaseous phase when the calcination temperature was lower than 400 c. this was due to the fact that the phase structure of the film was amorphous. at 400 c, the film appeared obviously photoactive du

    對于用液相沉積法所制備的tio :薄膜，薄膜中的si （或fe ）含量和薄膜的厚度可通過調節前驅體濃度、溶液的ph值、基片的沉積溫度和沉積時間，薄膜的熱處理溫度和時間進行有效地控制。
  7. 0xl0 - 2 c / cm2k respectively. and the sbn thin film can avoid plumbum pollution of pzt ferroelectric material

    而且， sbn在制備過程中能夠避免pzt等鐵電材料的鉛污染的問題。
  8. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  9. The method of amino ? roup doping into hydrogenated amorphous carbon ( ct - c : h ) film and the influence of technological condition on it had been exhaustedly discussed in the article

    本文詳細研究了對氫化碳膜進行胺基團摻雜的方法，工藝條件。
  10. The fabrication parameters were preliminarily optimized. the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ). the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )

    闡述了摻硼金剛石膜的制備工藝，研究了摻硼金剛石膜成核和生長的影響因素，初步優化了沉積摻硼金剛石膜工藝參數，同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。
  11. C - plane sapphire substrate for opto - electronic applications as nitride based led is one of the latest additions to our sapphire product line. over the years, sapphire has proven to be a reliable base substrate to grow gallium nitride epitaxial film for high brightness led

    C -軸切型的藍寶石是近年來應用在生長氮化鎵藍光led重要的基材。兆晶科技新近增加此產品以因應光電業者殷切的需求。
  12. On the advertising in film and tv among current c hinese mainland, hongkong and taiwan and the mentality of boatrace

    當代中國大陸及港臺影視廣告與受眾心理研究
  13. The zn / o ratio, c - axis orented and stress were improved by annealing, and also redusing the defect of zno flim, increasing the size of grain. but too high annealing temperature was adverse to recrystallization of zno thin film

    退火能改善zno薄膜的鋅氧比、 c軸的擇優取向和應力狀態，減少薄膜中的缺陷，使晶粒長大，但是過高的退火溫度不利於zno薄膜的重結晶，使zno薄膜的質量變差。
  14. The results indicated that the dimension, shape and purity of base material could meet the functional demand of solid lubricant ; the thermal decomposition temperature of ptfe resin exceeds 400 c, but organic and inorganic packing filler added in ptfe made the water absorption rate of composite material increased, melting temperature and decomposition temperature decreased, in the meanwhile oxidative decomposition reaction was accompanied ; polar groups such as c = o, c - o - c and so on in the carbon fiber surface is advantageous to increase compatibility with other components and interlayer shearing strength ; uniform design experimental method could help to find the relationship between formula and frictional property by relatively small tests. the developing trend of each formula ' s friction coefficient could be showed by fitting curve ; the friction coefficient with no copper powder or graphite in formula was relatively big. this fact showed that copper powder and graphite should be used cooperatively ; it was found that when the ratio of copper powder to graphite by weight is 15 : 60, 30 : 30 - 40 and 60 : 15 - 30 respectively, the friction coefficient was relatively small. the degree of crystallinity of pure ptfe reached maximum by air cooling and the abrasion loss also reached maximum among three ones ; at the same time, the abrasion loss of solid lubricant sample was also the biggest among three ones ; when solid lubricant matched with 45 # steel axle or gcrl5 steel axle, lubricant transfer film could be formed on metal surface, thus direct contact between the surface of metal friction pair rings was reduced. their working life was elongated extremely ; there was mainly much graphite, a little ptff, moo3, feso4, cus and so on in lubricant transfer film

    試驗結果表明：所選原料的尺寸、形狀及純度可滿足固體潤滑劑的性能要求；聚四氟乙烯樹脂熱分解溫度超過400 ，但在ptfe中加入無機填料會使復合材料吸水率提高，熔融溫度及分解溫度降低，且伴有氧化分解反應；碳纖維表面含有c = o及c - o - c等極性基團，有利於提高其與其它組分的相容性，提高層間剪切強度；均勻設計試驗方法能夠用較少的試驗次數找出配方與摩擦性能間的關系，擬合曲線基本能表示各配方的摩擦系數發展趨勢；配方中不加銅粉或不加石墨，其摩擦系數均較高，說明銅粉和石墨應該配合使用；當銅粉15份、石墨60份時，銅粉30份、石墨30 - 40份時，銅粉60 、石墨15 - 30份時，摩擦系數均具有較低值；純聚四氟乙烯樹脂在空氣冷卻時結晶度最大，磨損量也是三者中最大的；同時，固體潤滑劑試樣在空氣冷卻時的磨損量也是三者中最大的：不論是固體潤滑劑與45 #鋼軸配副或是固體潤滑劑鑲嵌入銅套后與gcr15鋼軸配副，在金屬表面均可形成潤滑轉移膜，從而減少金屬摩擦副表面間的直接接觸，大大延長其使用壽命;轉移膜中主要含有較多的石墨、少量聚四氟乙烯、 moo 。
  15. The purpose of this dissertation is to study the effect of substrate on the characteristics and microstructure of high temperature superconducting yba2cu3o7 - thin film, and well c - axis oriented epitaxial ybco thin films have been deposited on both laalo3 ( 100 ) and r - plane sapphire al2o3 ( 102 ) substrates by inverted cylindrical dc sputtering ( icds ) technique

    =本論文的目的是研究基片對薄膜結構和性能的影響關系，採用倒筒靶直流濺射技術在在laalo3 （ 100 ）和r -平面的藍寶石（ al2o3 （ 102 ） ）兩種基片上制備出c軸取向的外延高溫超導yba2cu3o7 -薄膜。
  16. By film thickness measured, fourier transformed infrared spectrometer ( ftir ) analysis, x - ray photoelectron spectroscopy ( xps ) analysis and relative irradiance measurement, the effect of microwave input powers on deposition rates, f / c ratios, bonding configurations of ct - c : f films and the radicals in plasma originating from source gases dissociation is analyzed

    由於微波功率的改變會導致等離子體中電子溫度和等離子體密度發生變化，從而造成不同的源氣體分解過程，結果微波功率的升高導致了薄膜沉積速率的提高、 f / c比的降低，同時也導致薄膜中cf和cf _ 3基團密度的降低，而保持cf _ 2基團密度接近常數。
  17. Growth rates of between 0. 25 and 1. 3μm/min were reported with the c axis of hexagonal zno grown on(0112)-oriented al2o3 lying in the plane of the film。

    據報道，在（0112）取向的Al2O3襯底上生長C軸位於薄膜平面上的六角晶體ZnO的情形中，其生長速率在025mmin和13mmin之間。
  18. However, all of them had the same insuperable problem that the epitaxy of gan thin film had to be happened in high temperature no less than 1000 c. as a result, impurity as well as structure defect will be induced

    上述方法均面臨一個問題，那就是gan薄膜的生長要在約1000的溫度下進行，其結果是造成晶格結構缺陷的產生。
  19. We have found the best ways to optimize the growth of quality zno films and got highly c - axis oriented zno films. the microstructures of the films were observed by afm. after analyzing the crystal structures, the crystal tropism and the surface conformation flatness, we found the result that the substrate temperature of 400 ? is ideal for silicon substrates, which conforms to the result of the structure analyse. by analyzing the magnetism of zno films, we found that the films appropriately doped with fe, co ions have magnetism at room temperature and their magnetism can be improved by doping other little cu ion, but it is not certain that the content of cu is higher, the film has more magnetism, so it has the best content of cu. moreover, the films which have best crystal structures may not have the best magnetism

    我們採用原子力顯微鏡（ afm ）方法觀察薄膜的顯微結構，利用所得的圖象信息對薄膜的晶粒結構、晶粒取向、表面形態平整度等進行分析討論，認為400的襯底溫度對硅襯底薄膜是合適的，與結構分析的結果一致。通過對薄膜磁性能的分析和研究，我們得出一些有意義的結果：適量過渡金屬離子fe 、 co摻雜的zno薄膜，在室溫下具有鐵磁性，而在此基礎上摻入少量的cu離子能改善薄膜的磁性。摻cu量有個最佳值，而且結構最好的薄膜磁性不一定最好。
  20. The a - c films were quantitatively analyzed by boxing dimension method. it indicates that with the fractal dimension increase, such surface of a - c film has more complicated microstructure, more and finer nanostructured grooves, so that it is able

    隨著分形維數的增大，薄膜的表面具有更加復雜的結構，表面有更多和更精細的具有納米尺度的凹凸、皺褶和缺陷結構，具有更大的吸附和容納氣體的能力，從而提高水滴薄膜表面的接觸角。
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