cdse 中文意思是什麼

cdse 解釋
化鎘
  1. Various chemical strategies have been introduced to the system to affect the dynamics of reaction, and thus, to adjust the nucleation and growth process. by using appropriate complexing agents as controlling reagents and adjusting the reaction temperature, both morphologies ( nanorods and fractals ) and structural phases ( zinc blende or wurtzite structures ) of cdse nanocrystals can be easily controlled. a precipitate slow - release controlled method was designed in the synthesis of manganese selenides

    在化學調控合成思想的指導下，運用已取得的調控合成的成功經驗，利用mnseo3沉澱緩釋放出mn2 +源和硒源，在調節反應溫度的基礎上，于同一反應體系成功地合成了mnse2和mnse的立方體和球形微米晶，實現了產物組成和維度的調控，並對它們的磁行為進行了研究。
  2. Exciton decay in zncdse qw cdse qd

    量子點復合結構中的激子衰減
  3. The exciton - phonon coupling in cdse qds and its wetting layer were investigated by pl dependent of temperature

    利用變溫實驗研究了在量子點與其浸潤層中激子與聲子耦合現象。
  4. The effect of deposition parameters on cdse target performances of fpc tube

    靶面淀積參數對攝像特性的影響
  5. From comparison of coupling in the two parts, we found that the exciton - lo phonon coupling was restrained in cdse qds

    而量子點發射峰的線型的非均勻寬化比浸潤層的大近50 。
  6. Semiconductor quantum dots ( qds ) are inorganic nanocrystals consisted of a cadmium selenide ( cdse ) core which was wrapped in an outer shell of zinc sulfide ( zns )

    摘要半導體量子點是無機納米結晶，構成於硒化鎘核心和硫化鋅外殼。
  7. Cadmium selenide ( cdse ) single crystal is regarded as one of the most promising materials for room temperature nuclear radiation detectors, but cdse detectors have not been studied in detail because of the lack of high quality cdse single crystals and suitable technology for this semiconductor and the devices

    Cdse單晶體是最有前途的室溫核輻射探測器材料之一，但由於沒有制備出高質量的cdse單晶體，加上沒有成熟的半導體材料加工技術與器件製作工藝，人們對cdse探測器沒有進行深入的研究。
  8. In this dissertation, firstly, preparation, structure and optical properties of templates - - anodic alumina membranes ( abbreviated as aam ) with nano - pore arrays were studied intensively. then electro - deposition preparation and mechanism of cadmium selenide ( cdse ) thin films were investigated. at last, cdse nano - wire arrays in aam with nano - pore arrays were prepared and characterized by template - electro - deposition method which is one kind of up - to - date way and has merits of both template technique and electro - deposition method

    本論文首先對模板? ?納米孔陣列陽極氧化鋁膜（ aam ）的制備、結構和光學性質進行了比較詳細的研究，然後研究了cdse薄膜的電沉積法制備及沉積機理，最後結合模板技術和電沉積法各自的特點，首次以納米孔陣列aam為模板，用模板-電沉積新方法制備出cdse納米線陣列，並對其進行了較為詳細的表徵。
  9. ( 2 ) uniform cdse nanowire arrays with controllable lengths have been fabricated by dc electrodeposition in the aao templates with ag as their conductive substrates from dmso system under different temperature. the nanowires with the diameters from 10nm to 50nm, and the lengths from 1 ( m to 20 ( m have been obtained

    以銀作為導電基底的多孔陽極氧化鋁為模板，在dmso體系中，用恆流電沉積方法，于不同溫度下分別在直徑為10 ， 20 ， 50nm的aao模板中制備出了cdse納米線，並對它們進行了退火處理。
  10. The main point can be summarized as follows : a low - temperature elemental - direct - reaction route to nanocrystalline cdse and znse, and further more, by using the newly produced se with high reactivity as reactant, a controllable synthetic route named " selenite reduction hydrothermal method " have been developed

    在合成新途徑的探索方面，從發現了水熱元素直接反應法，發展到亞硒酸鹽水熱還原法，提出了化學調控合成的新概念，為液相中金屬硒碲化合物的合成提供了可能的動力學調控手段和方法。
  11. To avoid the noise and the polarization effect, the most suitable structure for cdse detectors made up of perfect crystal wafers should be that : it - n contact as anode, mis contact as cathode

    當晶片的質量較好時， cdse探壩器的最佳結構是正極採用高阻半導體低阻n型半導體鍘刪x負極採用misw 。
  12. Sem, transmission electron microscopy ( tem ), x - ray energy - dispersion analysis ( edax ), xrd, electron diffraction ( ed ) and high - resolution electron microscopy ( hrem ) were used to investigate the morphology, atomic composition and crystal structure of the nanowires. the hexagonal cdse nanowires with single crystal structure have been obtained in dmso under 140. ( 3 ) semiconductor te and cdte nanowires embedded in aao templates were fabricated for the first time by dc < wp = 7 > electrodeposition in ethylene glycol

    Sem 、 tem 、 edax 、 xrd 、 ed 、 hrem分析的結果表明，所得cdse納米線為六方晶型，晶體的（ 001 ）晶面沿平行於基底的方向擇優生長，且隨沉積溫度的降低，這種擇優生長的趨勢越來越強；納米線晶體在生長時，由於受aao模板孔徑的限制，形成c軸方向拉長的晶粒，其長徑比達5 1以上；晶體的大小和完善程度隨沉積溫度的降低而增大， 185沉積得到多晶六方cdse納米線，而140沉積時可得到六方cdse單晶納米線。
  13. ( 5 ) cdse nano - wire arrays / aam composite, cdse nano - wire arrays and cdse nano - wire were prepared by template - electro - deposition in seleneous acid ( hasech ) solution and selenosulfite ion ( sesoa2 " ) solution. then the image, composition and structure of those products were investigated by sem, tem, eds, xps and x - ray diffraction ( xrd )

    （ 5 ）分別以hzseo3和seso32一為硒源，用模板一電沉積法在納米孔陣列aam模板中制備出cdse納米線陣列/ aam復合物，然後溶解掉納米孔陣列aam ，寧} ） ij得了cdse納米線陣列和cdse納米線。
  14. The wavelength of pump light in white light mode is 400nm. 2. the excitonic tunneling from cdznse qw to cdse quantum dots under resonant excitation was investigated using femtosecond pump - probe technology on the cdznse quantum well / cdse quantum dots structure

    用飛秒脈沖泵浦-探測方法研究了cdse量子點znse cdznse量子阱結構在對cdznse量子阱的激子共振激發條件下激子在量子阱與量子點之間的隧穿。
  15. Leakage current is one of key factors for the energy resolution of the detectors, the mis detector has lower leakage current thus improve the energy resolution. the mis structure is a good contact type for the cdse detectors

    可見漏電流是影響探測器能量解析度的重要因素，具有mis接觸電極的探測器能有效地減小漏電流，提高能量解析度，因而是cdse探測器的一種較佳電極接觸方式。
  16. We have obtained some achivements in this work, and our work is one of the important progress in the field of the cdse room temperature nuclear detector research

    若進一步改善晶體的質量和u器的制備工藝， cdsekil核輻射探測器將會有廣闊的應用前景。
  17. Cdse, a ii - vi compound with direct transition, wide - band - gap and high atomic number ( 48, 34 ), is regarded as a new effective materials for room temperature nuclear radiation detectors and photoconductive devices, and can be used in many fields

    Prince提出的優良室溫核輻射探測器材料必須具備的要求，因而被認為是制備室溫核輻射探測器的最有前途的新材料之一，可廣泛應用於探礦、無損檢測、核醫學、環境監測、軍事和空間宇航技術等領域。
  18. - ray at room temperature got 40 %. the results show that the modified growth technique is a new and promising method for grow ing highly purity and perfect cdse single crystals, and by improving the technique of single crystals growth and fabricating process, the resolution of cdse detectors can be improved further

    晶體生長和探測器制備工藝技術是制備性能優異的探測器的基礎，因此，通過不斷改進晶體生長過程和探測器的制備工藝技術，可以制得低背景噪聲、性能穩定及能量解析度較高的cdse室溫核輻射探測器，這也是需要進一步研究和提高的地方。
  19. The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection

    本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。
  20. Studying on density of electronic states and half - metallic property of v - and cr - coded cdse ferromagnetic semiconductors

    鐵磁半導體的電子能態密度和半金屬性質研究
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