chemical vapor deposition (cvd) 中文意思是什麼

chemical vapor deposition (cvd) 解釋
化學汽相沉積
  • chemical : adj 化學的，化學作用的；應用化學的，用化學方法獲得的。n 〈常 pl 〉化學製品；藥品。 fine chemicals...
  • vapor : n. 〈美國〉＝ vapour.
  • deposition : n. 1. 免職，罷免；廢位。2. 淤積[沉積]（物，作用）。3. 耶穌從十字架上放下（的畫、雕刻）。4. 寄存，委託；委託物。5. 【法律】口供，證言；口供書。
  1. Sub - thesis is mainly on the test and research of the photoelectric properties of a - si : h thin film deposited by microwave electron cyclotron resonance chemical vapor deposition ( mw - ecr cvd ) system

    本論文主要是對mw - ecrcvd系統沉積的a - si : h薄膜進行了一系列的光電特性的測試研究工作。
  2. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
  3. The study showed that the effect of surface tension induced by the nanosize curvature of critical nuclei could drive metastable phase region of diamond nucleation in carbon diagram into stable phase region, consequently, for both of homogenous and heterogeneous nucleation processes, diamond nucleation would be prior to graphite nucleation in competing growth of diamond and graphite upon chemical vapor deposition ( cvd )

    研究表明，建立在碳的平衡相圖基礎上，在納米尺寸的金剛石臨界核的曲率誘導下的表面張力效應將金剛石成核的亞穩相區推進到穩定相區，因此無論對于金剛石的均勻氣相成核還是異質成核，在金剛石和石墨的競爭生長中，金剛石成核均優先於石墨成核。
  4. We analyzed the nucleation act of diamond in chemical vapor deposition ( cvd ) from the view of thermodynamics in the paper. a new nanothermodynamic approach was proposed, based on the established carbon thermodynamic equilibrium phase diagram

    本文從熱力學角度分析了化學氣相沉積（ cvd ）金剛石過程中，金剛石的成核行為，提出了一種新的金剛石的納米成核熱力學觀點。
  5. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  6. In situ diagnosis of plasma environment for synthesizing diamond film was conducted by langmuir single probe and optical emission spectroscopy. the mechanism of diamond growth was investigated and the n - type diamond was deposited by glow plasma assisted chemical vapor deposition ( cvd )

    本文通過langmuir單探針和光發射譜對合成金剛石薄膜的等離子體環境進行了原位診斷；初步探討了金剛石薄膜生長的動力學過程；並採用輝光等離子體輔助化學氣相沉積（ cvd ）技術制備得到了n型金剛石薄膜。
  7. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
  8. Sic films are synthesized using two technologies of pulse laser deposition ( pld ) and chemical vapor deposition ( cvd ) and the characteristics of sic films are analysized in this paper

    本工作採用激光濺射沉積（ pld ）和激光輔助熱絲化學氣相沉積（ hfcvd ）兩種實驗技術制備了sic薄膜，並對薄膜特性進行了研究。
  9. However, the limitation of large - scale production and the high cost have restrained the development of the research on their application. comparing to arc discharge and laser ablation, chemical vapor deposition ( cvd ) is the most possible method with large - scale, low - cost and high - yield advantage to fabricate swnts

    相對電弧法與激光蒸發法，化學氣相沉積法（ cvd ）是最有望實現大批量、低成本、高產率制備swnts的方法，因此已成為其制備方法研究領域的熱點。
  10. It is found that the catalyst inducement and density greatly affect the alignment of carbon nanotubes. ferrocene as the catalyst precursor, double - layered aligned carbon nanotubes were grown on silicon substrates using chemical vapor deposition ( cvd ) by decomposing acetylene twice

    對于鍍al 、鍍ni硅面，在二茂鐵分解形成的納米鐵顆粒與襯底上的al和ni顆粒分別形成的液相合金的作用下，碳原子團簇生成大量雜亂無序的碳納米管。
  11. The applications field of fgm include aerospace, electron, chemistry, biology and medicine fields ; the composition change also from metal / ceramic to metal / metal, metal / alloy, non - metal / non - metal and non - metal / ceramic. moreover, various methods including powder metallurgy, self - propagating high - temperature synthesis ( shs ), chemical and physical vapor deposition ( cvd and pvd ), electrodeposition, laser cladding method, plasma sputtering and sol - gel method have been studed. metal organic chemical vapor deposition ( mocvd ), using chemical vapor deposition of metal organic compounds, is an effective method for acquiring special function materials and membrane

    功能梯度材料是21世紀最有發展前景的新型材料之一，其用途已由原來的宇航工業，擴大到核能源、電子、化學、生物醫學等領域；其組成也由金屬?陶瓷發展成為金屬?金屬、金屬?合金、非金屬?非金屬、非金屬?陶瓷等多種組合；其制備方法主要包括粉末冶金法，自蔓延高溫合成法（ shs ） 、氣相沉積法（ cvd和pvd ） 、電沉積法，激光熔覆法，溶膠?凝膠法（ sol - gel ）等。
  12. In my work, nanocrystalline - sic films were prepared by catalytic chemical vapor deposition ( cat - cvd ) on single crystal si ( 100 ) wafers, and quartz wafers

    本文採用觸媒cvd方法，在單晶si和石英襯底上制備出納米立方sic （ - sic ）薄膜。
  13. The implementation of fluorine generation technology for chemical vapor deposition ( cvd ) chamber cleaning applications poses significant new challenges with regard to safety, reliability, purity and overall cost of ownership

    摘要對于將氟氣應用在化學氣相沉積器清洗的應用而言，其安全性、穩定性、純度和價格，在應用上是一個新的挑戰。
  14. The multiwalled carbon nanotube array was fabricated by chemical vapor deposition ( cvd ) in the template of porous alumina in the presence of a catalyst such as cobalt and the carbonaceous source of c2h2

    以多孔氧化鋁為模板，金屬鈷為催化劑，乙炔為碳源，通過化學氣相沉積法制備出多壁碳納米管陣列。
  15. The main contents in this paper were as follows : 1. cnts were synthesized by chemical vapor deposition ( cvd ) method, the mechanism of cnts growth was analyzed

    主要內容為以下幾個方面: 1 .本文通過化學氣相沉積法制備了碳納米管，分析了碳納米管的生長機理。
  16. Abstract as a good material in engineering, diamond can be used in many fields. however, natural diamond is scale and expensive, so people make synthetic one using chemical vapor deposition ( cvd )

    化學氣相沉積（ cvd ）金剛石膜是具有優異的力學、電學、熱學、聲學和化學性能於一體的材料，在高科技領域具有十分廣闊的應用前景。
  17. In order to study these questions, we researched three topics in this paper mainly : 1. we prepared zno nanowires using chemical vapor deposition ( cvd ) method based vapor - liquid - solid ( vls ) mechanism. our object was getting arrayed and controllable growth of zno nanowires through integrating the controllable ability of vls mechanism and merits of cvd and controlling the technique conditions of preparation

    針對以上存在的問題，本文主要在以下三個方面進行了初步的探索: 1 .採用基於氣-液-固（ vls ）生長機理的化學氣相沉積（ cvd ）法制備zno納米線，結合vls機理對生長過程的控製作用以及cvd方法的優點，通過對催化劑、源溫度、生長溫度和反應氣氛等工藝條件的控制，得到納米線的陣列化生長。
  18. Third, the fabrication of hollow fibers with sic films has been done with chemical vapor deposition ( cvd ), and the power - transmitting properties of the above samples have been obtained with an austar 360 ftir spectrometer and kyky - 2800 sem. the kind of fiber has a 950um inner diameter and 3m length, and its transmitting loss is about 0. 7db / m which can be suitable for many applications

    利用化學氣相沉積法（ cvd ）初步完成了具有sic內膜的空芯傳能光纖的制備，使用auastar360ir - ft紅外光譜儀、 kyky - 2800型掃描電鏡等先進儀器對樣品進行分析研究，所研製的孔徑為950微米、長3米的sic sio _ 2空芯傳能光纖，傳輸損耗約為0 . 7db m ，為進一步提高光纖性能打下了良好的基礎。
  19. In this paper, the properties of diamond is summarized at first, then the mechanism of chemical vapor deposition ( cvd ) for synthesizing diamond film is introduced and some common techniques of the cvd are commented. among these common techniques, electron aided cvd ( eacvd ) is seleceted for develepment of diamond film deposition equipment in this study, because of its high efficiency and low cost

    本文首先對金剛石的性質進行概述，然後介紹了化學氣相沉積法（ cvd ）生長金剛石膜的原理，接著對幾種常見的cvd法進行比較和評述，由於eacvd法具有高效、低成本的特點，因此在這幾種方法中選擇eacvd法作為本課題設備生長金剛石膜的方法。
  20. In order to improving the performance of high - power ni / mh batteries, nano - scale additives including cnts and nano - scale coo were added into the positive electrode of the batteries. the overall characteristics of ni ( oh ) 2 / niooh electrode and ni / mh batteries were investigated at different charge - discharge conditions at room temperature. multi - walled carbon nanotubes were synthesized by chemical vapor deposition ( cvd )

    本文以改善高功率mh ni電池性能為應用背景，通過對mh ni電池正極物理添加cnts 、納米coo兩種納米添加劑，研究了正極納米添加劑對ni （ oh ） _ 2 niooh正極和對高功率mh ni電池性能的影響，並討論了納米添加劑對改善鎳正極和mh ni電池性能的作用機理。
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