conduction band 中文意思是什麼

conduction band 解釋
傳導帶；導電區
  • conduction : n. （用管對流體的）引流；【物理學】傳導，導電；【生理】神經脈沖的傳導。
  • band : n 1 帶，繩；帶形物；箍；箍條；嵌條；鑲邊；鋸條； 〈pl 〉 （法官等的）寬領帶。2 束縛，羈絆；義務；...
  1. There are mainly three arguments on the physical origin of the new conduction band minimum of ganas ( or galnnas ). they are band anti - crossing model, gaas conduction band mixing model and impurity band model

    關于ganas的導帶帶邊的物理本質，目前主要有三種爭論較激烈的觀點，它們分別是能帶反交叉模型， gaas導帶混合模型，雜質帶模型。
  2. The photocatalytic activities of the xw11 / tio2 ( x = p, si, ge ) composite films were tested via degradation of aqueous azo - dyes, congo red ( cr ) and naphthol blue black ( nbb ). it was observed that the photocatalytic activities of the three composite films are much higher than that of the pure tio2 film, mainly attributed to the synergetic effect between xw11 and tio2, i. e., xw11 - catalyzed electron transfer from the conduction band ( cb ) of photoexicited tio2 to itself

    結果表明三種復合膜均具有遠高於純tio _ 2膜的活性，主要歸因於復合膜材料中多金屬氧酸鹽和tio _ 2之間存在的協同效應，即作為強電子受體的多金屬氧酸鹽接受tio _ 2受光激發形成的導帶光生電子，延長了空穴-電子的再復合時間，同時自身仍具有光活性。
  3. 2. when installing the heating band, please stick one side of the plane to the compressor in order to guarantee the heat conduction effect

    2電加熱帶安裝時，應將平面一側貼于壓縮機上，保證熱傳導效果
  4. The system exhibits fast response for the load current disturbance and the system always operates at discontinuous conduction current mode so that no slope compensation is required and high efficiency will be achieved when driving 4 leds. the design and analysis of sub - block circuits are provide in the thesis where band gap reference, oscillator, current sensing and over current protection, led load current

    本文完成了各個單元電路的分析與設計，著重分析了帶隙基準源、振蕩器、采樣和過流保護、負載led電流控制和開負載保護五個子電路，對其餘子電路也作了簡要分析。
  5. The empty spaces in the conduction band are at too high an energy level to be of use

    導帶里的空間則由於能量太高而無法利用。
  6. The quenching centers aroused by mn2 + introduction merely quench the orange emission of colloidal zns : mn2 + nanocrystals. the quenching process of this kind of quenching centers, which reduce the energy of 4t1 level rather than that of conduction band, is different from that of the quenching centers eliminated by zn2 + introduction. the quenching data is analyzed considering the distribution of mn2 + additives adsorbed at the surface of colloidal nanoparticles

    Mn ~ （ 2 + ）表面修飾引起的表面猝滅中心只對橙光發射有猝滅作用，這些猝滅中心和外加zn ~ （ 2 + ）消除的表面猝滅中心猝滅行為不同，它們只減少來自內部mn ~ （ 2 + ）雜質~ 4t _ 1能級上的，而不是zns基質導帶上的能量。
  7. Influence of strain on subband structure is described by a factor dk, which is the phonon induced band deformation potential extracted from experiment data. in strained si conduction band, the value of dk is 2. 4 times larger than its si counterpart

    在該模型中，應力對子能帶結構的影響通過聲子的形變勢能dk表示， dk為經實驗修正得到的經驗參數，在應變硅導帶中，其值是體硅材料形變勢能的2 . 4倍。
  8. We find that the relations between the electronic effective mass of lowest - lying conduction band and wave vector are resemble, not only for narrow - gap semiconductor zigzag tubes but also for wide - gap semiconductor zigzag tubes. the electronic effective masses at bottom of lowest - lying conduction band depend on their tube - diameters

    我們發現，無論是鋸齒型窄隙半導體管還是鋸齒型寬隙半導體管，同一類管的最低導帶的電子有效質量隨波矢變化的規律基本相同，且其導帶底的電子有效質量隨管徑的增大而減小。
  9. The highest - energy band containing electrons is called the valence band, and the next higher one is the conduction band

    填有電子而能量最高的能帶稱為價帶，相鄰的更高能帶稱為導帶。
  10. I adopts rubber as insulation material including power cable, operating temperature is between - 30c and 180c. good heat conducting ability the tight connection of conducting band and crankcase can ensure high conduction efficiency

    電加熱帶線緊貼在壓縮機曲軸箱外殼，通電即可產生熱能直接進行導熱，熱效應高，可短時加熱達到效果。
  11. Quantum confinement effects of the lowest conduction band states in semiconductor quantum dots

    半導體量子點最低導帶態的量子限制效應
  12. Again, the electronic effective masses at bottom of lowest - lying conduction band of narrow - gap semiconductor zigzag tubes are inversely proportional to square of their tube - diameters. as for chiral tubes, the electronic effective masses at bottom of lowest - lying conduction band contact with their tube - diameters and chiralities

    此外，鋸齒型窄隙半導體管導帶底的電子有效質量與其管徑的平方成反比關系；對于螺旋型管，其導帶底的電子有效質量不僅與管徑相關，而且與螺旋度也相關聯。
  13. The tail of localized states in the band gap is formed, and in the high temperature range, the behavior of metallic conduction can be observed

    並根據其電導、載流子濃度、遷移率隨溫度的變化分析zno ： al薄膜的導電機制。
  14. Effective masses at the top of valence band and at the bottom of conduction band are deduced from the band structure

    價帶頂和導帶底的有效質量從計算得到的能帶結構中求出。
  15. The light - induced - electrons were mainly on conduction band, voo / vo and vo / v energy level. the electrons under 0 _ ( 2 ) / 0 _ ( 2 ) were not useful to photocatalysis

    和v口v能級之上，位於吸附態02 / 02 『能級以下的光生電子對光催化沒有貢獻。
  16. The defects energy levels intensity became smaller, the electrons on the conduction band became more and photocatalysis became better with the heat treatment temperature, the similar conclusion was drawn from experiments

    隨著熱處理溫度的升高，試樣的缺陷能級密度減小，導帶上光生電子的數目相應增大，光催化效率提高，實驗中也得出了同樣的結論。
  17. Our pl spectra under hydrostatic pressure showed that the conduction band minimum is in fact the result of the interaction and mixing of the gaas conduction band states. people are still arguing that ganxas, . x ( x < 0. 1 ) and gaas will form type - i or type - ii quantum well

    通過光壓力光譜的研究，我們發現gan _ xas _ （ 1 - x ） （ x 0 . 1 ）的導帶帶邊態實際上主要是gaas各導帶態相互作用的結果，這為導帶混合模型提供了實驗的證據。
  18. Uv - vis and pl spectra were used to study the energy band structure and the holding states of light - induced - electrons of tio _ ( 2 ) powder and films prepared by magnetron sputtering. the energy band structure and light - induce - electrons holding states were studied by pl spectra, conduction band and impurity energy levels were emerged together and formed a new continuum band

    導帶和雜質帶連到一起形成了連續帶?雜質能帶，光生電子並不是位於導帶之上，武漢理工大學碩士學位論文而是占據了2 . 5一3 . sev的連續帶上，主要集中於2 . 65一3 . oev之間。
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