conduction carrier 中文意思是什麼

conduction carrier 解釋
傳導載波
  • conduction : n. (用管對流體的)引流;【物理學】傳導,導電;【生理】神經脈沖的傳導。
  • carrier : n 1 運送人,搬夫;負荷者;使役,〈美國〉信差,郵遞員;送報人;〈英國〉運輸行,運輸業者。2 傳書鴿...
  1. And non - fourier heat conduction is encountered. when the wavelength of the heat carrier is comparable to the characteristic length of the structures, or the time of heat conduction is shorter than that required for reaching the state of thermal equilibrium, the heat conduction has wave characteristics

    當載熱體的微時間尺度與能量激發特徵時間相比擬時,或者傳熱發生的時間比達到熱力學平衡態所需的時間短時,熱傳導就可能出現波動性質。
  2. The n type carrier was provided by interstitial zn atom, and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility. when zno thin film was annealed in the ar ambience, p conduction type was founded in the zno thin film which grew in oxygen enrichment condition. this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ), and p type carrier was from oi

    在ar氣保護下,對富氧條件下生長的zno薄膜的退火后的霍爾測量中發現, zno薄膜呈現p型導電狀態,分析認為,這可能是由於富氧狀態下生長的zno薄膜中過量的o在ar氣保護下退火沒有逸出薄膜,反而進入了zno薄膜的間隙位置,成為正電中心,使zno薄膜呈現p型導電。
  3. Heterojunctions : conduction normal to junction : i - v models and characteristics. theory of graded layers ; creation of internal carrier - specific fields

    垂直於接面的電流傳導:電流-電壓模型與特性。漸變層理論;內部載子規?電場的產生。
  4. With the finite - difference method, self - consistent solutions for the possion ' s equation, injected current density, carrier concentration, optical field and thermal conduction equations have been realized to study the thermal - field properties, the coupling of electricity, thermal and optical - fields, and the influences of n - dbr and double oxide - confining regions on the characteristics of vcsels

    本文建立了一個直接耦合的準三維理論模型,通過有限差分法求解泊松方程、載流子擴散方程、熱傳導方程和光場方程的自洽解,研究了vcsel的熱場分佈特性,並實現了電、熱和光場的耦合,同時考慮了n - dbr及雙氧化限制層對vcsel特性的影響。
  5. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件熱載流子退化所引入的界面態,根據其沿溝道非均勻分佈的模型,採用準二維分析方法對退化后器件的漏源電流、閾值電壓和飽和區溝道電場作了詳細的理論推導,並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。
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