crystal defects 中文意思是什麼

crystal defects 解釋
晶體缺陷
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  • defects : 布疵
  1. These defects appear during crystal growth, but crystals having such defects are not considered usable for ic manufacture and are discarded.

    這些缺陷在晶體生長時出現，有這類缺陷的晶體不能用於集成電路製造，應報廢。
  2. The crystal imperfections we consider here are called point defects.

    我們認為這里的晶體缺陷是致命缺陷。
  3. Xrd, sem, tem and hrtem were applied to analyze the phase composition and microstructure, as well as crystal defects in the rps tin coating

    利用xrd 、 sem 、 tem及hrtem等分析手段研究分析了塗層的結構、微觀組織，以及塗層內的晶體缺陷。
  4. Testing of materials for use in semiconductor technology ; detection of crystal defects and inhomogeneities in silicon single crystals by x - ray topography

    半導體工藝使用材料的檢驗.第1部分:用x射線外形測量
  5. The main aim of this book is to explain, in the simplest terms possible, the techniques which are available for the analysis of crystal defects using tem

    這本書的主要目的是要說明，在最可能的條件，用tem進行晶體缺點分析的技術。
  6. As the increasing of calcinating temperature, crystallite size of co3o4 is reduced, while that of licoo2 increased and furthermore, there is less defects in the crystal structure

    Licoo _ 2樣品的晶粒大小、顆粒大小和團聚情況等微結構因素與先驅物co _ 3o _ 4存在一定的繼承性。
  7. Another possibility is that the crystal of helium contains numerous defects and lattice vacancies ( yet another effect of the zero - point motion )

    另一種可能是氦的晶體中有許多缺陷和晶格空位（也是零點運動所造成的） 。
  8. Abstract : the defects such as inclusion, splitting, dislocation and dendrite in the pbxla1 - x ( zry tiz sn1 - y - z ) o3 ( plzst ) single crystal grown from pbo - pbf2 flux by the slow cooling self - seeding technique were discussed in this paper. the forming mechanism of these defects were analyzed and some measures to eliminate the defects were proposed

    文摘:本文介紹了助熔劑緩慢降溫自發成核法生長的稀土摻雜鋯鈦錫酸鉛鑭（ plzst ）晶體中出現的幾種缺陷：包裹體、開裂、位錯、枝晶，分析了這些缺陷的形成機理並提出了減少和消除這些缺陷的一些措施。
  9. These defects in crystal can be explained by the instability of the growth and cooling, etc. another factor is the high viscosity in this system, xrd indicated that most of the inclusion was flux

    通過對晶體表面缺陷的觀察與分析認為，晶體裂縫、生長丘、生長臺階及包裹物等缺陷與生長條件和工藝密切相關。
  10. No3 : revealing crystal defects at atomic level by field - emmission hrem ( invited lecture ), f. h. li, proceedings 7th asia - pacific electron microscopy conference, singapore, june24 - 30, 2000, pp. 26 - 27

    場發射高分辨電子顯微鏡在揭示原子解析度晶體缺陷上的應用（特邀論文） ，李方華，科儀新知， 21 （ 1999 ） 8 - 15
  11. Three parts are discussed, respective, ( 1 ) the nanostructure in the perfect of single crystal copper structure and perfect titanium structure. ( 2 ) the tensile deformation mechanism and stress analysis of the point defects effects. ( 3 ) the significance of effect as size reduced

    本論文所探討的內容可分為三部分，分別為： （ 1 ）針對完美單晶銅結構與完美鈦結構的拉伸變形研究（ 2 ）包含了空孔點缺陷的拉伸變形結構研究（ 3 ）針對尺寸縮小后所造成的表面效應影響作一探討。
  12. Ordinarily, there are four types of defects of crystal oscillator, such as, fill insufficient, bubble, heave and out of order leg

    晶振常見的缺陷有填充不足、填充材料有氣泡、凸起和長短腳等。
  13. The dislocation - free, low defects densities crystal are acquired, in which the impurities concentration is decreased, their distribution are uniform, and the gaas crystal has high uniform and purity characteristics

    利用m - lec法可以消除單晶中的位錯，降低缺陷密度，降低單晶中的雜質含量，並能使雜質在晶體中的分佈均勻，得到晶體均勻性、純凈度都高的gaas單晶。
  14. It turns out that such single - crystal ingots are no longer good enough for the job : they have too many “ defects, ” dislocations in the atomic lattice that hamper the silicon ' s ability to conduct and otherwise cause trouble during chip manufacture

    然而這樣一顆單晶棒已經不足以滿足工作需求：它們有太多缺陷分佈在原子晶格之間，這會影響矽的導電能力，而且會在晶片製造過程中帶來麻煩。
  15. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  16. When two same defects are introduced into the structure, the defect modes, no matter in the bragg gap or the zari gap, reveal degeneracy and split as the interval between the two defects decrease, due to the coupling of the two defects. the split of defect mode doesn ’ t appear when two different kinds of defects are introduced. furtherlly, the transmission of 1d ternary photonic crystal containing lhm is also investigated with the help of tmm

    引入兩個缺陷之後，當缺陷相同時，缺陷間的相互作用與它們的間隔成反比，當缺陷間隔比較大時，相互作用比較小，其缺陷模是簡並的;隨著間隔的減小，相互作用變大，簡並的缺陷模將發生分裂，間隔越小分裂越明顯，而且這種現象與缺陷模所處帶隙以及結構本身的構成無關。
  17. We modify the defect by applications of optical tweezers technology. structural defects can dictate the properties of photonic bandgap materials, adding intentional defects within the crystal are needed

    在實際的應用中，缺陷的結構決定了光子帶隙材料的性質，這就需要人為的製造出具有特殊用途的缺陷。
  18. In this case, tft - lcd panel shows an uneven brightness due to the variance of the backlight and uneven distributions of liquid crystal material. moreover, mura defects generally have low contrast and vague outline

    這種方法中，首先假設圖像中每個像素的灰度值都是該像素二維坐標的函數，而所有像素的灰度值及其二維坐標構成了分佈在矩形格點上的空間數據點的集合。
  19. Its potential and maximal application field is for semiconductor films and optic films that mainly rely on the high - orientation and single crystal diamond films and big area transparent diamond films. but it is widely existent for defects in the process of diamond films growth and also it is difficult to get parameters stability such as temperature etc in wide area, as a result, the diamond films " orientation is changed, and it is very difficult to get the high - orientation and single crystal diamond films and big area transparent diamond films

    金剛石膜潛在的最大應用領域是作為半導體薄膜和光學薄膜，而這個領域的開發在很大程度上依賴于高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得，但由於金剛石膜生長過程中缺陷的普遍存在以及大面積范圍內均勻溫度場等參數的難以獲取，從而導致金剛石膜的取向發生改變，使高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得十分困難。
  20. In undoped lec si - gaas single crystal, the density of dislocation is usually very high and the dislocations easily form the cellular structure. the formation and distribution of other impurities and point defects are closely correlative with the cell structure and then result in the non - uniformity distribution of electrical and optical characteristic of gaas material

    而非摻lecsi - gaas中的高密度位錯，往往形成胞狀結構；其它雜質和點缺陷的形成與分佈與該結構密切相關，並導致gaas材料電學和光學特性的不均勻。
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