crystal impurity 中文意思是什麼

crystal impurity 解釋
晶體雜質
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  • impurity : n. 〈常用 pl. 〉1. 不純，不潔。2. 下流，不道德，不貞節，雜質。
  1. Complete crystal shape, high diaphaneity and low impurity. suitable for circular saws, frame saws and geological broach

    晶體完整，透明度高，雜質含量低，晶形與晶體強度性能優越。使用於圓鋸切片、框鋸切片、地質鉆頭。
  2. In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers

    本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。
  3. It is suitable for medium such as water, gas, heat energy, crystal and powder material etc, especially suitable for medium of easy sedimentation, fouling, crystal, lumber, mixed with foreign impurity, sewage and medium with corrodibility, high scouring and great friction

    適用於水、氣、熱能、漿液、晶粒、粉狀物料等介質，特別是能滿足兩相流溶液工藝流程中易沉澱、結垢、結晶、析出、雜物、異物混雜的介質、污水及腐蝕性、高沖刷性、琢磨性強的特殊需求。
  4. Point defect - a crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom

    點缺陷-不純凈的晶缺陷，例如格子空缺或原子空隙。
  5. With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature

    含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。
  6. Znd2160 complete crystal shape with full surface, good diaphaneity and low impurity, suitable for circular saws, frame - saw and geological broach

    Znd2160晶體完整，晶面飽滿，透明度高，雜質含量低，晶形與晶體強度性能優越。使用於圓鋸切片、框鋸切片、地質鉆頭。
  7. Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

    用光致發光光譜法測定硅晶體中雜質濃度的試驗方法
  8. The grown solution of dkdp crystal was synthesized firstly, then the relationship between concentrations of metal ion impurities and critical supersaturation was discussed by the measurement of metal ion impurity concentrations

    本文首先合成了dkdp晶體生長溶液，測定了合成溶液中部分雜質金屬離子的含量，討論了雜質金屬離子濃度和臨界過飽和度之間的關系。
  9. The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges

    採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。
  10. The crystal structure of the quantum paraelectrics is mainly perovskite type, similar to most of the ferroelectrics, and external factors, e. g. impurity doping, may induce ferroelectric phase

    量子順電體的結構和鐵電體很相似，大部分屬于abo _ 3的鈣鈦礦結構，所以應力或摻雜等易使之成為鐵電體。
  11. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  12. Topics covered include : crystal lattices, electronic energy band structures, phonon dispersion relatons, effective mass theorem, semiclassical equations of motion, and impurity states in semiconductors, band structure and transport properties of selected semiconductors, and connection of quantum theory of solids with quasifermi levels and boltzmann transport used in device modeling

    被覆蓋的論題包括：晶格、電子能帶結構、聲子色散關系、有效質量理論、半經典運動方程和半導體中的非純態、選擇性半導體的帶結構和輸運性質固體量子理論與準費米能級以及用於器件建模的玻爾茲曼輸運理論之間的聯系。
  13. The catena product wholly design for transporting definite corrosive medium have granule or crystal, adopt steel pad uhmw - pe to made it. owned excellent resist causticity and reputably resist attrition, structure and design is model of hang arm front - karat, impeller is half karat model no front cover, boost up transit capability of passage. let the granule and impurity of medium pass pump - cavity quickly not to jam

    本系列產品專為輸送具有一定腐蝕性且含有細顆粒或有結晶的介質而設計，採用鋼襯超高分子量聚乙稀模壓成型工藝製造，具有優異的耐腐蝕性和卓越的耐磨性能，結構設計為懸臂前開式，葉輪為半開式無前蓋板，增強了流道內的通過性，使介質中的顆粒及雜質很快通過泵腔而不會堵塞，軸封為k型氟橡膠密封環外帶冷卻水套，兼顧了耐腐與耐磨的雙重要求。
  14. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  15. There is also energy band structure for photons in photonic crystal, which is similar as that for electrons in natural crystal ( electronic crysta1 ). localized state will ap - pear if there is an impurity or defect

    光子晶體中的光子與一般晶體（電子晶體）中的電子相似，都有能帶結構，都會因為有雜質和缺陷態的存在而存在局域態。
  16. The influence of the crystal shape impurity and temperature on the strength of diamond

    雜質及溫度對金剛石強度的影響
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