crystal nucleation 中文意思是什麼

crystal nucleation 解釋
晶核化作用
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  • nucleation : n. 【物、化】成核（現象）；晶核過程，核子作用；集結；人工降雨作用。
  1. According to the i - t curves of potential step, it was revealed that electrocrystallization of ni - w - b alloy on glassy carbon followed the mechanism of instantaneous nucleation and three dimensional growth with diffusion controlled. the crystal nucleus number on the surface of electrode raised by the increase of over potential

    根據電位階躍的i t曲線分析得知，在玻摘要碳電極上ni wb合金電結晶過程遵從擴散控制瞬時成核三維成長模式進行，且隨著過電位的增加，電極表面上晶核數增多。
  2. With the thermodynamic theories and techniques, it is relatively easy to determine the phase equilibrium data with enough accuracy, however there still exist much more difficulties in crystallization kinetics study even for a simple binary system. that is the reason that nucleation and crystal growth rate are generally represented in form of the empirical expressions. the crystallization kinetic is important for crystallizer design, process control and optimization, and it is strongly depended upon the accurate characterization of process information concerning with multiphase flows and the further disclose of its mechanisms with suitable mathematical models

    熱力學理論和方法已足以獲得準確的相平衡關系；然而即使對于簡單的二元物系的結晶過程，晶核形成和晶體生長動力學的研究仍面臨許多困難，通常採用經驗模型表述，而動力學參數的準確性和可靠性是結晶器放大設計、過程式控制制與優化的關鍵，因此多相流信息的準確表徵、結晶機理的進一步揭示及建立起與之相適應的數學模型有著十分重要的學術研究和實際應用價值。
  3. Nano - sio2 acted as the nucleation agent in pp, and greatly upgrading the crystal temperature, nucleation rate and crystallinity when 1 % ~ 5 % nano - sio2 by weight was added

    在納米sio _ 2含量為1 5份時， pp的結晶溫度以及結晶速率隨著含量的增加而增加；結晶度隨著納米sio _ 2 ，粒子的含量先增加然後下降。
  4. It ' s well - known that nucleation consisted of homogeneous nucleation and heterogeneous nucleation. the organic matrix used as the template to induce inorganic crystal growth and simulate the biomineralization is actually to promote heterogeneous nucleation and inhabit homogeneous nucleation. urinary stone is a kind of product of unusual biomineralization

    眾所周知，結晶過程中的成核有均相成核和非均相成核兩種可能，利用有機基質做模板，誘導無機晶體生長，模擬生物體內的礦化過程實際是促進非均相成核而抑制均相成核。
  5. The paper works out the ice crystal spectrum distributing in the different macroscopic and micro - backgroud of the cloud ( ie, the thickness, the temperature and the supersaturation with respect to ice of the nucleation layer ). this paper also works out the amount of catalyst which is allowed in the cloud nucleation layer according to the different quantity of the supercooled water, the density of the supersaturation of the vapor with respect to ice. simultaneously, the paper discusses the i nfluence of remaining time when seeding artificial ice nucleus in the different ascending - velocity and altitude, and elicits the proper seeding altitude of the catalyst

    以此解為依據，得出了不同均流時，人工引入冰核在核化層存留時間，再以此時間作為人工冰核凝華增長時間，求出不同的雲宏微觀背景（如核化層厚度、溫度、冰面過飽和度等）下的冰晶譜分佈，經和實際資料比對符合相當好。進而求出核化層中不同過冷水量、冰面過飽和水汽密度下雲核化層可允許的催化用量。同時討論了不同升速，不同高度引入人工冰核時對其存留時間的影響。
  6. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  7. On the surface of annealed 45 steel, as the pearlite in it contains cementite phase and has high crystal boundary density, the nucleation and growth of deposits prefer to occur at the pearlite at the beginning during depositioa the coating exists in form of nano - polycrystal layers composed by gathering of nano - sized crystals

    在退火態45鋼表面，由於珠光體組織中含有滲碳體相且具有比較高的晶界密度，因而在沉積初期鍍層優先在此處形核和生長；鍍層在基體表面是以納米尺度的晶粒聚集在一起形成的聚晶體形式存在的。
  8. The seemingly mcnt content in pt can be controlled by repeating the coatings of the film and increasing the mcnt doped concentration of the sol. the heterogeneous nucleation at the interface between mcnt and pt was induced by the doption of mcnt. the films which were calcined at 500 ? had formed perovskite and large crystal content, means that perovskite formed at the lower temperature, in conclusion, the crystalline ability of pt was improved by the doption of tb and mcnt

    納米碳管的引入，使得體系在納米碳管和pt之間的界面產生非均態核化，隨pt薄膜成核勢壘的降低，摻納米碳管的pt薄膜在較低溫度下即可形成鈣鈦礦相，在500的較低溫度，就可獲得結晶完整且己具有很大結晶量的薄膜。
  9. The hydrate formation behavior of methane and gaseous ethylene were compared, including solution rate, nucleation and crystal growth

    比較了甲烷和常規氣體乙烯水合物生成在溶解速率、成核、生長過程的動力學行為。
  10. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  11. It shows that the interface energy and the heterogeneous nucleation barrier were changed by the doping of tb. so the relationship between crystal content and tb doped concentration can be " described as : y = 1 - exp ( k1 exp ( k cos ( ( x + ) 3 ) it shows that the crystal content will reach a maximum with increasing tb doped concentration because of the influence of heterogeneous nucleation barrier variation

    本文在分析界面能的基礎上，推導了在一定條件下薄膜受摻tb影響的鈣鈦礦相析晶含量的理論表達式為： y 1 yxp （ k ； xxp （ kcos （ s ? （ x a ） 』 ）該式表明了受體系成核界面能的變化影響，晶體生長受摻tb濃度影響出現極值。
  12. In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films

    本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。
  13. The experimental results show that : solution, nucleation and crystal growth are a continuous process. the induction effect is not apparent in the ethylene hydrate formation. the kinetic curves of ethylene in gaseous condition are very smooth with second nucleation happened in lower temperature and higher pressure

    實驗結果表明：乙烯水合物生成的溶解、成核、生長的進行是一連續的過程，誘導過程不明顯甚至消失；常規條件下的乙烯動力學為一光滑連續的曲線，在較低溫度和較高壓力下會有二次成核現象；近臨界條件下乙烯生成水合物頻繁出現二次成核現象；超臨界條件下的乙烯由於其特殊的性質而使生成動力學行為變得更加復雜。
  14. Finally, it briefly discusses the feasibility, the applying foreground and the approach with regard to the calculating method about the amount of catalyst provided in this paper by integrating the ascending - velocity field and cloud water field in the possible working section abstracted from the mm5 mesoscale model with the thickness of the ice crystal particles in nucleation layer and supercooled water quantity which is surveyed by the plane

    得出適合的催化劑引入高度等。最後，簡要討論了用mm5中尺度區域模式提取可能作業區的升速場和雲水量場，並結合飛機實測核化層冰晶粒子濃度、過冷水量等，探討了本文提出的催化劑用量計算方法的可行性，應用前景和途徑。
  15. In order to understand the frost crystal growth, the nucleation process on the cold plate with constant temperature was investigated. the experimental results revealed that the lower the cold plate temperature is, the shorter the frozen time of water droplets, and the smaller the frozen water droplets

    為了加深對晶體生長階段的認識，本文對某一具有確定溫度的冷壁面突然與一定環境條件下的濕空氣接觸時冷壁面上的成核過程進行了研究。
  16. Heat treatment can eliminate stress of crystal and facilitate crystal growth. pbo as mineralizer accelerates nucleation and crystal growth rates. the results of xrd demonstrate that the single perovskite phase plzst is stable under the high temperature

    不同工藝條件下形成plzst晶體的情況也不同，合適的工藝條件為： 750保溫2小時就可以生成plzst晶體；在一定的成型壓力下可以促進plzst晶體的長大；利用退火來消除晶體的內應力也有利plzst晶體的長大；加入過量pbo有利plzst晶體的生成。
分享友人
分享到 Line

分享到臉書