cubic lattice 中文意思是什麼

cubic lattice 解釋
立方點陣
  • cubic : adj. 1. 立方體[形]的,正六面體的。2. 【數學】三次的,立方的。n. 【數學】三次曲線;三次方程式;三次多項式;三次函數。
  • lattice : n. 1. 格子。2. 【物理學】點陣;網路。3. 【建築】格構。vt. 1. 把…製成格子狀。2. 用格子覆蓋[裝飾]。
  1. Abstract : considering the second nearest - neighbor interaction and cubic, quartic anharmonic interactions simultaneously, we employ the multiple scales method combined with a quasidiscreteness approximation to calculate the lattice vibration. it is shown that the kind of nonlinear chain exhibits envelope soliton, envelope kink and envelope antikink soliton. these results can also be used to explain the experimental phenomena that the kink amplitude of the self - localized structure is determined only by the intrinsic properties of its lattices

    文摘:同時考慮次近鄰諧振相互作用和三次方、四次方非諧相互作用,利用多重尺度結合準離散近似方法去計算晶格振動行為,發現一維非線性點陣中存在包絡孤子及正扭結型包絡孤子、反扭結型包絡孤子,解釋了自局域結構的幅度只取決于點陣中的固有參數的實驗現象
  2. Another example of the cubic lattice system is the body-centered cubic crystal of cesium chloride.

    立方晶系的另一個例子是氯化銫的體心立方晶體。
  3. Abstract : the effect of correction of self - consistent potential on electronic structure in simple cubic nanocrystal particles is calculated by means of the green ' s function method in the tight - binding approximation, taking only the nearest neighbor matrix elements into account. the numerical results show that the electronic energy spectrum is shifted, the chemical potential is not equal to the atomic energy level, the electronic density at each lattice point is changed, and the variation of electronic density at surface lattice point is the largest

    文摘:在緊束縛近似下,只計及最近鄰的矩陣元,採用格林函數計算了自洽勢修正對簡立方納米晶體顆粒的電子結構的影響,發現電子能譜發生了移動,化學勢不等於格點原子能級,各格點的電子密度也發生了變化,其中以表面格點的電子密度變化最大。
  4. Compared with the behavior of macromolecules in real solution system, the adsorption information in the monte carlo simulation system, such as adsorption isotherm, surface coverage, and bound fraction, was studied for discussing its relation to simulation parameters. five - selection simple cubic lattice, self - avoiding walk, and nearest interaction model were used to construct the homopolymer adsorption model on the solid - liquid interface. periodic boundary conditions were used to reduce the fixed error from limited cubic lattice in size

    模擬中採用五選擇簡單立方格子上的自迴避行走和最近鄰相互作用模型;使用周期性邊界條件以減小有限大格子空間帶來的系統誤差;用鏈節間相互作用能、界面吸附能、體相濃度和鏈長約束體系中的高分子的吸附行為;用末端轉動、 l -翻轉、曲柄運動、蛇形運動和r - r切除-生長法對模擬體系進行擾動;用系統達到吸附平衡后的樣本來研究模擬體系中的高分子鏈在固液界面上的吸附。
  5. Body - centered cubic lattice

    體心立方格子
  6. Cubic simple lattice

    簡單立方晶格
  7. A novel cubic homogeneous similarly lattice module structure was proposed in this paper, which includes active module and passive module according to the different connection mechanism

    本文首先提出並研製了一種新型的正立方體類均一陣列式模塊結構,根據模塊中連接機構的不同分為主動模塊和被動模塊兩種。
  8. Face - centered cubic lattice

    面心立方格子
  9. Simulation of face - centered cubic lattice ' s first brillouin zone with 3 - dimensional animation

    面心立方晶格第一布里淵區的三維動畫模擬
  10. A monte carlo model was developed for simulating the adsorption behaviors of linear macromolecule chains on the solid - liquid interface. the simulations were performed on a simple cubic lattice, which was 50 50 50 sites in size. the concentration profiles of total segments, tails and loops in dilute solutions were used to analyze the influences of simulation parameters ( body concentration, interaction energy between segments, adsorption energy of interface, and macromolecule chain length ) on various adsorption configurations

    本文採用montecarlo方法構造了水溶性均聚鏈狀高分子固液界面吸附模型,在50 50 50簡單立方格子上模擬研究了高分子稀溶液中鏈節濃度、鏈尾和鏈環分佈,並結合真實高分子鏈的吸附行為,討論了模擬參數(鏈節間相互作用能、界面吸附能、體相濃度與鏈長)對各種吸附構型分佈、吸附量、表面覆蓋度和附著分數的影響。
  11. Body centered cubic lattice

    體心立方晶格
  12. A study of the simple cubic lattice bond percolation problem on the renormalization group approach

    簡立方格子鍵滲流模型的重整化群方法研究
  13. Lanio3 ( lno ), as a desirable candidate for electrode materials, has a pseudo - cubic perovskite crystal structure with a lattice parameter of 3. 84

    作為一種合適的侯選電極材料, lanio3 ( lno )的晶體結構是一種贗立方的鈣鈦礦結構。
  14. It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials, however, for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little. 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas, we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films, and bn ( n - type ) / si ( p - type ) heterojunctions were prepared

    5實現了氮化硼薄膜的n型摻雜,成功制備出bn型)乃…型)異質結並且首次系統研究了其卜v和cv特性我們用射頻濺射法濺射六角氨化硼靶,在工作氣體氮和氮中混入s ,沉積氮化硼薄膜,以研究氮化硼薄膜的n型摻雜,並得到bnh型)侶i …型)異質結。
  15. Based on the given linear holstein model, and using the variational method we obtained the ground state properties of the electron - phonon interaction system with cubic and quartic lattice ( phonon ) terms. we obtained the relations between the ground state energy and the phonon squeezing effect and polaron squeezing effect as well as the variation of the polaron bandwidth

    在線性holstein模型的基礎上,採用變分法得出了含晶格(聲子)三次方和四次方勢下系統基態特性,得到了基態能量與聲子壓縮效應和極化子壓縮效應的關系,並求得了極化子能帶寬度的變化規律。
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