current-voltage characteristics 中文意思是什麼
current-voltage characteristics
解釋
電流電壓特性- current : adj. 1. 通用的，流行的。2. 現在的，現時的，當時的。3. 流暢的；草寫的。n. 1. 水流；氣流；電流。2. 思潮，潮流；趨勢，傾向。3. 進行，過程。
- voltage : n. 【電學】電壓，電壓量，伏特數。 the working voltage （電氣的）耐壓限度。
- characteristics : 產品性能描述
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The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。 -
Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法 -
Numerical study of voltage - current characteristics in a three - quantum - well superlattice unit
三量子阱超晶格單元結構電流特性的數值研究 -
Effect of structural parameters on current - voltage characteristics in a three - quantum - well superlattice unit
結構參數對三量子阱超晶格單元結構伏安特性的影響 -
First, it analyzes the working principle and some features of the system, such as the circulating current characteristics, power distribution characteristics, and characteristics about closed loop regulation of voltage. then it goes on to the study of some typical control methods, and designs on this basis, a parallel controller using a synchronization control strategy of racing to merging and a load - sharing strategy combined with feedback control and drooped control
文中，首先通過建立系統的數學模型，分析了逆變電源並聯運行的工作原理以及並聯系統的一些主要特性，包括它的環流特性、功率特性和電壓閉環調節特性；在此基礎上，又研究了幾種典型的並聯運行控制方式；然後，採用搶占與並發相結合的同步控制方式和反饋與下垂特性相結合的負載均分控制設計了並聯控制器。 -
Firstly, based on the analysis of the principle of the capacitor discharge ignition system in the gasline engine and the characteristics of ignition parameters in the gasline engine, the author proposes the methods of ignition parameters measurement, including the speed of the gasline engine, ignition advance angle, ignition voltage, ignition current and igniton energy
首先，在認真分析汽油機電容放電點火系統的工作原理及其點火參數的特性的基礎上，提出了汽油機轉速、點火提前角、點火電壓、點火電流和點火能量的測量方法。 -
Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高 -
The characteristics : the unit is composed of high voltage parallel capacitor, serial reactor, switch ( disconnector, grounding switch, breaker etc. ), lightning arrestor, fuse, discharging coil, current transformer, insulator, busbar and steel bracket, includes two kinds of structure : frame type and cabinet type
產品特點：裝置由高壓並聯電容器、串聯電抗器、開關（隔離開關、接地開關、斷路器等） 、避雷器、熔斷器、放電線圈、電流互感器、絕緣子、母排和鋼架組成，裝置有框架和櫃式兩種結構。 -
The typical performance characteristics include : line and load transient response, efficiency, output voltage ripple, quiescent current, maximum load current, output voltage temperature characteristics and the short
其中，整體模擬指標包括:晶元線性調整率和負載調整率、轉換效率、輸出電壓紋波、晶元靜態電流、最大負載電流、輸出電壓溫度特性及短路負載電流。 -
In this paper, the theory of negatively charged surface states is used to investigate dynamic breakdown characteristics and the increase of gate - drain breakdown voltage as well as the reduction of saturated drain - source current after sulfur passivation. the measure which can improve the stability of sulfur passivation is proposed
本論文通過對gaasmesfet擊穿機理和硫鈍化機理的研究，用負電荷表面態理論，解釋了gaasmesfet動態擊穿特性及硫鈍化后柵漏擊穿電壓增大、源漏飽和電流減小的機理，提出了改善硫鈍化穩定性的措施。 -
High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix. gettering procedures can reduce metal contamination
由於金屬雜質原子擴散並沉積在器件的有源區，會造成諸如：反向漏電流較大，反向擊穿電壓是軟擊穿等有害的影響。 -
Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors
我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。 -
For the first time, the energy band configuration of p - si / n - bn heterojunctions were studied and drawn up. the study of the current - voltage ( i - v ) characteristics showed significant rectifying behavior with reverse saturation current of 3. 7 x 10 ~ 7a, breakdown voltage of 30v and turn on voltage of 14v. the capacity - voltage ( c - v ) characteristics are studied too
研究了p - si / n - bn異質結的-特性，測試表明異質結具有明顯的整流特性，反向飽和電流3 . 7x10 「 』 a ，擊穿電壓高達30v導通電壓為14v ，應用p七en異質結能帶圖對其卜v特性做出了定性解釋。 -
Numerical simulation of current - voltage characteristics in a double barrier system
雙勢壘系統伏安特性的數值模擬 -
Photovoltaic devices - measurement of photovoltaic current - voltage characteristics
光電器件.第1部分:光電池電流.電壓特性測量 -
Photovaltaic devices. part 1 : measurement of photovaltic current - voltage characteristics
光電設備.第1部分:光電電流電壓特性的測量 -
Photovoltaic devices. part 1 : measurement of photovoltaic current - voltage characteristics
光伏器件第1部分:光伏電流電壓特性的測量 -
Photovoltaic devices ; part 1 : measurement of photovoltaic current - voltage characteristics
光電器件.第1部分:光電池電流.電壓性能的測定 -
Photovoltaic devices - part 1 : measurement of photovoltaic current - voltage characteristics iec 60904 - 1 : 1987 ; german version en 60904 - 1 : 1993
光電器件.第1部分:光電池電流-電壓性能測量 -
As technique of power electronics develops, the load with nonlinear, impactive, unbalanced characteristics such as current rectifiers, frequency converters, arc furnaces have been increasingly used in power network in recent years. they generate lots of harmonics and cause distortion in power electrical network current ( voltage )
隨著電力電子技術的發展，近年來電網中象整流器、變頻器、電弧爐這樣具有非線性、沖擊性和不平衡用電特性的負荷不斷增加，引起供電網中的電流（電壓）畸變，產生大量諧波。
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