deep gate 中文意思是什麼
deep gate
解釋
深水閘門-
The god of bane. at odds with ishtar. supported the demons in the ogre battle. hell gate is a 100 - floor - deep temple that was dedicated to him
災難與禍害的神，與光之聖神伊修塔爾不和。在奧伽戰爭中是惡魔族的宗主。一百層的死者宮殿就是作為獻祭給阿斯摩迪神的存在。 -
The power station is diversion type power station of low gate dam with a normal storage level of 1268. 0 m, a highest gate dam level of 31 meters and a reservoir capacity of 2, 974, 000 cubic meters, the length of diversion tunnel of which is 19. 57 kilometers, installed capacity is 360mw futang power station is constructed on the basis of deep and thick overburden, the foundation of which mainly consist of five overburdens which, in general, belong to multiple, complex foundation
福堂水電站位於四川省阿壩藏族羌族自治州汶川縣境內的岷江河段上，電站為低閘引水式開發。正常蓄水位1268 . 0m ，最大閘高31m ，庫容297 . 4萬m ~ 3 ，引水隧洞長19 . 57km ，裝機360mw 。福堂水電站閘壩建於深厚覆蓋層基礎上，基礎主要存在五大覆蓋層，總體屬于多層復雜地基。 -
Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高 -
The total area of the corporation covers about 200 chinese acres and the length of coastline is about 1, 140 meters, the auxiliary facilities have taken shape the main facility and the equipment include the 30, 000 dwt dry dock which is 192 meters long by 40 meters wide the gate width 32 meters and 10 meters deep, is to date the biggest dry dock in fujian province ; one fitting wharf length 65 meters, width 17 meters ; 16 tons portal crane 1 set, 16 tons gantry crane 1 set, mobile cranes 50t1 25t1 12t2 8t4 and other necessary transportation, coatings, the precision work equipment supplying air 120 m min, spraying grit more than 4, 000 m day, renews the steel plate 12 15 t day we can finish repairing all kinds of ships under 40, 000 dwt within 7 to 10 days our corporation obtains the first - class dockyard to repair and build steel - made ships lisence in 2001, passed the national environmental protection appraisal in august 2002, was designated shipbuilding in fujian for maintaining foreign ships in octobet 2002, the dry dock, passage channel, the turning area, fitting wharf are passed by passage safety appraisal in march, 2003
主要設施和設備有： 3萬噸級干船塢一座長192米寬40米塢門凈寬32米深10米是福建省目前最大的干船塢舾裝碼頭一座長65米寬17米16噸門座起重機1臺10噸門吊1臺汽車吊8臺50噸1臺25噸1臺12噸2臺8噸4臺以及與其相配套的運輸噴塗精加工設備。每分種供氣120立方米，日噴砂面積4000多平方米，日換鋼板15 20噸。一般修船工期為7 10天。 -
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
In analyzing laminose structure of deep - hole gate, the method is effective
此方法簡便易行，精度較好，是分析深水閘薄板結構的有效方法。 -
Then he went to the gate facing east. he climbed its steps and measured the threshold of the gate ; it was one rod deep
6他到了朝東的門，就上門的臺階，量門的這檻，寬一竿。又量門的那檻，寬一竿。 -
Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大 -
When the silicon technology comes to deep sub - micron level, the interconnect delay exceeds the gate delay ; and because of the increase of 1c work frequency, the allowable errors become smaller, and the influence of the transmission delay gets bigger, which increase the difficulty of the circuit design
在深亞微米製造技術中，晶元互連線延遲超過門延遲，而且隨著集成電路工作頻率的提高，允許的時序容差變小，傳輸延遲的影響加大，設計工作難度增加。 -
Still waters run deep, my friend. well, buying a gift now is like closeing the gate after the horse has bolted
冰凍三尺非一日之寒，哥們，現在買禮物如同忘羊補牢。 -
This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide, and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s
本文對超薄柵氧化層經時擊穿（ tddb ）擊穿機理和可靠性表徵方法以及深亞微米mos器件熱載流子效應（ hce ）進行了系統研究。 -
The work will be done by an amphibious grab dredger, either fitted with a closed grab or a backhoe depending on the condition of the mud, starting from the southern edge of the deep bay mudflat and working in towards the mangroves and the sluice gate of
有關方面將使用一輛水陸兩用挖土機進行工程將，根據泥灘的情況採用抓鬥挖土機或挖掘機，從后海灣泥灘南面開始，進入紅樹林及17號基圍水閘。 -
Based on structural design criterion of floodgates, a finite clement method is adopted to analyze and calculate deep - hole gate chamber. and based on space plank analysis theory, area stress is considered in the stress calculation of original laminose problems. the method is simple, convenient and manageable and reaches better precision
本文在設計規范的基礎上針對水閘的結構設計，採用有限元對深孔閘的閘室進行了分析計算，根據空間板的分析理論，在原薄板問題的受力計算基礎上考慮了閘內力的作用。
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