density of states 中文意思是什麼
density of states
解釋
狀態密度-
We have calculated one - and two - photon absorption cross sections of the lowest excited states of a series of molecules combined with benzene, stilben, thiophene as center attached with amine, diphenylamine, diethylamine as electron - donor and nitryl as electron - acceptor ; the effects of molecular length, n center and electron - donor on two - photon absorption cross sections have been studied and all calculations have been carried out using the density functional theory at an ab initio level. it is found that the molecular length and the one - photon absorption intensity are quite strongly c orrelated factors, and that a corresponding correlation for the two - photon absorption is decreasing. it is also found that a most crucial role for the two - photon absorption is played by the n center
我們分別以苯、二苯乙烯、噻吩為中心，氨基、二苯氨基和二乙氨基為電子給體，硝基為電子受體組合形成的分子為研究對象，在從頭計算的水平上用密度泛函理論計算了這些分子在低激發態下的單、雙光子吸收強度，重點研究了分子的長度、中心和給體的供電子能力對分子單、雙光子吸收的影響。研究結果表明，分子長度與單光子吸收強度之間有密切關系，而在雙光子吸收中這種關系較弱；中心在雙光子吸收中具有重要的作用；在中心和受體一定的情況下，增加給體的供電子能力，可提高雙光子吸收強度。 -
This dissertation proves that a single m - partite entangled mixed state in the system whose dimension of each subsystem is two cannot be purified to an m - partite entangled pure state. in general, a single m - partite entangled mixed state whose density matrix has higher rank cannot be purified to an m - partite entangled pure state. for a class of entangled mixed states, its fidelity cannot be increased under locc
論證了在局域操作和經典通信下，單個多體糾纏混合態（每個子系統的維數都為2 ）不可能被純化；密度矩陣有著較高秩的混合態也不可能被純化；給出了一類多體糾纏混合態，在局域操作和經典通信下，對某一糾纏純態的忠實度不能增加。 -
Then, the nonlinear optical properties of pna molecule are studied by using time dependent density functional theory and few states approach
然後運用含時密度泛函理論及少態方法對pna分子體系的非線性光學性質進行了理論研究。 -
This paper derived the transfer matrix of the bilayer structure composed of left - handed and right - handed materials, and computed the density of states ( dos ) along the axis of the finite one - dimensional photonic crystal, which was constructed out of n such bilayer structures periodically
摘要推導出了由左右手材料構成的雙層結構的轉移矩陣，計算了由n個該雙層結構周期性排列所形成的一維有限長度光子晶體沿其軸線方向的態密度。 -
The entropy or number of states of system or subsystem are closely related to interaction of particles and energy level distribution, therefore, to study the temperature dependence of the specific heat may supply some important and useful microscopic information which may play an important role in understanding electronic structure, density of state, phonon spectrum etc. the specific heat measurements at low temperatures also play important roles in the finding of the third law of thermodynamics, the quantum theory of solid and bcs theory for superconducting etc. moreover, specific heat measurements help us to understand the different kinds of phase transitions ( such as : structural phase transition, magnetic phase transition, superconducting phase transition etc. ) and the scaling behavior near the critical point
系統、子系統的熵或微觀狀態數與微觀粒子間的相互作用及能級分佈密切相關，因此研究比熱與溫度的依賴關系能夠提供被測量系統許多極其有用的微觀信息，對理解固體的電子結構、電子態密度、聲子譜等起著十分重要的作用。低溫比熱的測量和研究對熱力學第三定律、固體量子理論和超導bcs等理論的建立起到了積極的推動作用。比熱研究還有助於認識各類相變如結構相變，磁性相變，超導相變等及臨界點附近的標度規律。 -
Elemental analysis based on the emission from plasma generated by focusing a powerful laser beam on a solid sample surface is known as laser - induced breakdown spectroscopy ( libs ). when the power density of laser on the sample surface is high enough, the sample is vaporized, and the neutral and ionic species are formed in excited states
利用聚焦的強激光束入射固體靶表面產生激光等離子體，對等離子體中原子和離子發射譜進行雜質元素分析，這一過程叫做激光誘導擊穿譜（ laser - inducedbreakdownspectroscopy ） ，簡稱（ libs ） 。 -
The radius of color screening in medium is in inverse proportion to the density of color charge and energy. when the radius of color screening is smaller than that of resonance state, strong interaction will decrease sharply and bound states ca n ' t exist
因為介質中的色屏蔽半徑反比於色荷密度和能量密度，當屏蔽半徑比共振態尺度小時，強相互作用力會減小得很厲害，使得束縛態不可能存在。 -
In chapter 3, after introducing the curvature - modified electronic structures of single - wall carbon nanotubes, we study the density of electronic states. the relations between the electronic structures and tube - diameters and chiralities are discussed
第三章介紹了考慮捲曲效應后的單壁碳納米管的電子能級結構，並在此基礎上研究了單壁碳納米管的電子態密度，以及管徑和螺旋度對其電子結構的影響。 -
In this thesis, we study the density of electronic states of single - wall carbon nanotubes. the effects of tube - diameters and chiralities on the electronic structures are discussed by means of the analytical expression of band structures of single - wall carbon nanotubes under the consideration of curvature effects
本文中，我們通過考慮捲曲效應后的單壁碳納米管解析的能級結構表達式，研究了單壁碳納米管的電子態密度，以及管徑和螺旋度對其電子結構的影響。 -
Secondly, density of states for metallic carbon nanotubes with a magnetic impurity is studied based on a single orbital anderson model
其次，引入anderson模型和快速收斂的微擾展開方法研究了單個磁性雜質對碳納米管態密度的影響。 -
Firstly, the influence of point defects on the density of states and conductance for metallic carbon nanotubes is studied based on the tight - binding model
首先，基於緊束縛模型研究了非磁性點缺陷對金屬型單壁碳納米管態密度和電導的影響。 -
From an analytic treatment, the state is determined by the nanotube diameter rather than chirality. the corresponding image of local density of states in real space shows a highly localized state around the defect
然後逐點計算局域態密度發現，在實空間準束縛態是一個非常局域化的效應，離開缺陷即迅速衰減。 -
Calculation of local density of states in the framework of u methods
方法框架下局域態密度的計算 -
Two kinds of deriving to debye ' s density of states in solid state theory
固體理論中德拜態密度的兩種推導 -
Density of states for one - dimensional photonic crystal composed of alternative left - handed and right - handed materials
左右手材料構成的一維光子晶體的態密度 -
Studying on density of electronic states and half - metallic property of v - and cr - coded cdse ferromagnetic semiconductors
鐵磁半導體的電子能態密度和半金屬性質研究 -
The photoelectric property of a - si : h films is closely associated with hydrogen content in films. on the one hand, hydrogen incorporated as monohydride ( si - h ) saturates dangling bonds in films, and on the other hand, hydrogen incorporated as polyhydride ( si - h2, si - h3, ( si - h2 ) n ) introduces defect in films and thus increases the density of localized electronic states in band gap
A - si ： h薄膜的光電特性同膜中的氫存在密切關系，一方面，氫以單氫化合物（ si - h ）方式結合到膜中，從而飽和了膜中的懸掛鍵；另一方面，氫以多氫化合物（ si - h2 、 si - h3和（ si - h2 ） n ）方式結合到膜中，反而在膜中引入了缺陷，使帶隙中的局域態密度增大。 -
At the same time, it states the dominant industry for each district, and defines growth pole of beijing suburbs on the basis of density of dominant industry and economical level for each district. finally, the paper demonstrates that it is necessary to build economy growth pole model of beijing suburbs on the beginning of 21s1 century on analysis of relations among dominant industry, growth pole and economic growth point, discusses evolvement rules about pole - core space structure phase. point - axis space structure phase and network space structure phase, analyses which space structure phase beijing suburbs is in, and brings forward point - axis developing model, then explains definition of point - axis developing model and important meanings for economy development of beijing suburbs, referring to principle of point - axis developing model, the paper proposes economy growth point model, and offer the policy and suggestion for government corresponding to the problems of application of economy growth point model
最後，通過論述主導產業、增長極與經濟增長點的相互關系，闡述了從產業和地區角度對主導產業和增長極進行綜合分析以構建21世紀初北京郊區的經濟增長點模式的必要性，探討了極核式空間結構階段、點軸式空間結構階段、網路空間結構階段這三種空間結構的演變規律，分析了21世紀初北京郊區所處的空間結構階段，提出了點軸開發模式，從點? ?軸開發的定義、對北京郊區經濟發展的意義進行了論述，進一步通過對點? ?軸空間結構系統的形成機理分析，借鑒點? ?軸開發的原理，提出21世紀初北京郊區的經濟增長點的構建模式，並針對這種模式構建中存在的問題，對政府工作提出了可行性建議。 -
For ga5p5 cluster, the most stable structure is a cube - based structure. the calculation of the density of states for ga5p5 shows semiconductor - like property. the ir and raman spectra, the dipole polarizability anisotropy invariant and hyperpolarizability are also calculated
對于ga _ 5p _ 5團簇的最穩定結構，用b3lyp 6 - 31 + g ~ *又進行了優化，計算了態密度，發現其具有半導體的性質，還計算了紅外和raman譜以及極化率，超極化率。 -
In the high frequency c - v experiments, the large flat - band shift in sio2 / p - sic indicated that there was high density of deep interface states. the deep interface states were simply studied by using photo excitation
在無光照條件下，比較了n型和p型sicmos的不同特點，對其深耗盡特徵和p型sicmos的平帶電壓作了討論和解釋。
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