diamond concentration 中文意思是什麼

diamond concentration 解釋
金剛石粒密集度
  • diamond : n 1 金剛鉆，金剛石，鉆石。2 菱形；菱飾；（紙牌的）方塊。3 【棒球】內野；棒球場。4 【印刷】鉆石體...
  • concentration : n. 1. 集中。2. 【化學】提濃，蒸濃，濃縮；濃度；稠密度；【礦物】汰選，選礦，富化。3. 集中注意，專心。
  1. Effect of carbon source concentration on mechanical properties of hfcvd diamond thin film coated tools

    碳源濃度對金剛石薄膜塗層刀具性能的影響
  2. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  3. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  4. With superior properties such as high thermal conductivity, high hole mobility, excellent chemical, thermal and radioactive stability, p - type diamond electrode can also greatly improve the stability of the devices, which complement the current electrode. the effect of boron concentration on the electronic properties of diamond films was investigated by raman spectroscopy, x - ray photoelectron spectroscopy and

    結果表明，摻雜金剛石膜突出的光學及電學性質及優異的抗高溫、抗腐蝕能力，機械強度大等優點，使其在作lppp發光器件的電極時，能克服一般電極在空氣中易於氧化、穩定性差的缺點，大大改善器件穩定性，提高器件壽命。
  5. Abstract : a research has been carried out theoretically and experimentally on the relationships among the unit volume fragmenting power of the diamond - circular saw and the factors such as grain sizes, concentration and working clearnce

    文摘:從理論和實踐上研究孕鑲金剛石圓鋸片的單位體積破碎功與金剛石的粒徑、濃度及工作間隙等因素的關系。
  6. Effects of methane concentration, deposition pressure, gas flow rate and substrate temperature on diamond coating on quartz glass by mpcvd were studied systemically. the best parameters were established by experiments

    系統地討論了在石英玻璃上mpcvd沉積金剛石薄膜的實驗過程中，甲烷濃度、沉積氣壓、氣體流量、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響。
  7. The paper systemically studied effects of methane concentration, deposition pressure, gas flow rate and substrate temperature on diamond coating on wc - co tools by mpcvd. the best parameters were established by experiments. influence of diamond film and coating adhesion was compared with two different pretreatments

    本文系統地研究了在硬質合金上mpcvd沉積金剛石薄膜的實驗過程中，甲烷濃度、沉積氣壓、氣體流量、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響。
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