dielectric circuit 中文意思是什麼

dielectric circuit 解釋
介質電路
  • dielectric : adj. 非傳導性的，絕緣的，介電的。n. 電介質，電介體，絕緣體。
  • circuit : n 1 （某一范圍的）周邊一圈；巡迴，周遊；巡迴路線[區域]；迂路。2 巡迴審判（區）；巡迴律師會。3 【...
  1. The equivalent circuit of the coupling between the dielectric resonator and microstrip is proved then

    接下來詳細推證了介質諧振器與微帶線間耦合的等效電路。
  2. Furthermore, on the basis of adopting pzt ( lead zirconium titanate ) as the switched - capacitor dielectric, the output current of a single circuit unit is eight times as large as that of the former single circuit unit with identical technology process parameters

    針對採用鋯鈦酸鉛鐵電薄膜（ pzt ）作為開關電容介質的設想，在工藝參數不變的情況下，計算機模擬結果表明，其單個單元電路輸出電流可提高7倍。
  3. In order to describe the actual working processes of dielectric barrier discharge ( dbd ) circuit, an analysis model of differential - difference equations was presented, based on the working modes of full bridge serial load resonant dbd circuit, which was adopted with phase shifting control

    摘要為描述介質阻擋放電型臭氧發生器電路的實際工作過程，在分析一種移相全橋脈寬調制下串聯負載諧振電源供電的臭氧發生器電路的基礎上，提出了採用微分差分方程來描述電路的工作過程，並給出了電路可能的工作軌跡。
  4. Aerospace series - circuit breakers - test methods - dielectric strength

    航空航天系列.斷路器.試驗方法.介電強度
  5. Aerospace series - circuit breakers - test methods - part 303 : dielectric strength

    航空航天系列.斷路器.試驗方法.第303部分:介電強度
  6. Test method for relative permittivity dielectric constant and dissipation factor of plastic - based microwave circuit substrates

    塑料片基微波電路基片的相對透電率
  7. Since the analysis of the inverter and its control system is very complex, the frequency analysis, time domain analysis and control system is made in capacitance operated conditions limited to pressure of time and paper length. the research content can be summed up as follows : ( 1 ) a new equivalent circuit of dbd circuit ( dielectric barrier discharge ) that consider the consume of transformer, the on - off switching loses and so on is presented based on the ozonier powered by sine current source. as compared with the former equivalent, the new equivalent circuit can be depicted the actual ozone circuit accurately

    本文主要針對容性狀態下的臭氧發生器電源進行相關研究，研究內容包括以下幾部分: （ 1 ）在正弦電流源供電的dbd型發生器的基波等效電路基礎上，提出了一種考慮電路雜散損耗（變壓器勵磁損耗、開關管開關和導通損耗以及其他元件的熱損耗）的改進型基波等效電路，並採用該等效電路得出了適用的臭氧發生器電源設計方法，實驗驗證了該基波等效電路具有工程設計精度高的優點。
  8. The circuitry may be rearranged for the purpose of the test to reduce the likelihood of solid state component damage while retaining the representative dielectric stress on the circuit

    電路上某段出現尖峰電壓時，為了測試，可以將電路重新安排，以減少固態組件受損的可能性。
  9. The measurement of dielectric loss and volume resistivity is effective preventive tests to judge insulating oil isolation status of polluted and aging, and it ' s important method of ensuring the safe operation of transformer and oil - filled circuit breaker, etc. however, the measuring systems of insulating oil dielectric loss and volume resistivity used at present exist the shortcoming of low accuracy, weak repeatability, inconvenience, and its thermostatic control system ca n ' t meet the challenge

    絕緣油的介質損耗因數、體積電阻率測量，是判斷絕緣油的劣化與污染程度的有效預防性試驗，是保障變壓器、油斷路器等充油電力設備安全運行的重要手段。然而，目前所使用的絕緣油介質損耗因數、體積電阻率測試系統存在著測量精度低、測量結果重復性不好、控溫系統不能滿足控溫要求、操作不便等缺陷，針對這一現狀，本文對絕緣油介損及體積電阻率一體化測試系統進行了研究。
  10. To make the design of the drvco more accurately, the coupling between the dielectric resonator and microstrip was studied and its equivalent circuit was proved. based on it, some different ideas from some reference book were presented. farther, the expression of the coupling ratio was derived

    為了使drvco的設計更加準確，在設計前先對介質諧振器與微帶線之間的耦合的等效電路進行了研究，提出了幾點與文獻資料不同的看法，並得出了耦合比k2的表達式。
  11. With the development and application of the microwave communication system 、 precision guided technologies and electronic countermeasure etc, the research on dielectric materials such as circuit dielectric substrate 、 antenna unit dielectric substrate and radome are paid more and more attention

    隨著毫米波通信系統、精確制導、電子對抗等技術的發展和應用，對電路介質基片、天線單元介質襯底、天線罩等介質材料的研究越來越受到重視。
  12. In order to improve the circuit performance and reliability, the considerations of increasing influence of parasitic effects resulted from interconnect crosstalk and delay as well as the electromigration and power consumption drive the introduction of copper and low - k dielectric

    為了提高電路性能及可靠性，並對連串擾及延遲引起的互連寄生效應影響的增長，電遷徙和功率損耗等方面進行綜合考慮，刺激了低電阻率銅和低介電常數介質的發展。
  13. Test method for relative permittivity dielectric constant and dissipation factor of polymer - based microwave circuit substrates

    塑料基微波電路底板的相對介電常數
  14. A theoretical basis has been provided for improving the dielectric recovery characteristics of high voltage circuit breaker. optimization of the nozzle based on the computation of inverse problem of electric field / gas flow field

    本文在對不同噴口結構斷路器短路開斷下介質恢復特性計算的基礎上，首次進行了基於電場/氣流場的高壓s氏斷路器噴口結構優化設計。
  15. The filter takes the advantages of low cost, small in size, light in weight, etc., and can easily be integrated into microwave and millimeter wave integrated circuits firstly, the ltcc technology was introduced and a test circuit based on the resonate method of microstrip ring was designed to test the performance of ltcc for dielectric constant and loss

    這種濾波器具有體積小，便於集成的特點，也適用於表面貼裝。先是對ltcc工藝及材料做了基本介紹，並採用微帶環諧振法設計了一個ltcc工藝性能測試電路，對ltcc成品的介電常數、損耗和q值進行測試。
  16. In this paper, the over voltage induced by re - ignition, rules of breakdown in vacuum contact clearance, factors which influence dielectric strength of clearance and characteristics of re - ignition when vacuum switchgear switch capacitor banks are analyzed. the conclusion is that the breakdown of clearance in vacuum interrupter is the direct cause which inducing re - ignition of vacuum circuit - breaker in capacitor banks ’ switch. particle breakdown is the essential reason to induce breakdown in clearance of vacuum interrupter, although mechanical characteristic of vacuum circuit - breaker is another factor

    本文通過對真空開關投切電容器組重燃過電壓、真空觸頭間隙擊穿機理及影響真空間隙介質強度的因素、真空開關投切電容器組重燃現象特點進行分析研究發現，真空滅弧室斷口的真空間隙擊穿是導致真空斷路器投切電容器組重燃的直接原因，其次是真空斷路器機械性能的影響，而微粒擊穿是導致國產真空滅弧室真空間隙擊穿的根本原因。
  17. Since metal - oxide - semiconductor ( mos ) device appeared, integration of integrated circuit ( ic ) expands as moore law. meanwhile the dimension of device scales down, the thickness of sio2 gate dielectric shrinks as the same law. but as the thickness of sio2 gate dielectric reaches at isa, the gate current rises very quickly and reaches at 1 10a / cm2

    自從金屬-氧化物-半導體（ mos ）器件出現以來，集成電路的集成度按照摩爾定律增加，相應地，器件的物理尺寸按照等比縮小的原則不斷縮小， sio _ 2作為柵介質的厚度不斷縮小，特徵尺寸在0 . 1 m以下的集成電路要求sio _ 2柵介質的厚度小於1 . 7nm 。
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