dielectrics 中文意思是什麼

dielectrics 解釋
電介質
  1. The basic concept of siw is that it use the top and bottom layers of metal together with two row of vias is very small compared with wavelength, the dissipation loss of radiation is very small. it acts like a rectangular waveguide filled with some dielectrics, so components which can be composed by rectangular waveguide can also composed by siw such as antenna, filter, power divider, coupler, resonator

    基片集成波導的基本概念是利用基片的上下金屬板和兩排間隔一定距離的金屬孔構成波導的金屬壁，由於每排金屬孔孔間距遠小於波長，因此由縫隙泄漏的能量很小，這相當于內部填充了介質的矩形波導，所以能夠用矩形普通波導實現的結構也都可以用基片集成波導來實現，比如功分器、濾波器、天線、耦合器、振蕩器等。
  2. Theoretical study of femtosecond laser - induced ablation in dielectrics

    超短脈沖激光對透明介質的燒蝕特性研究
  3. The fishkill fab is so up - to - date that it is capable of producing chips with all of the latest acronyms, from copper cmos technology to silicon - on - insulator and low - k dielectrics - all on 300mm wafers

    Fishkill工廠如此先進，可以生產幾乎所有最新的晶元：從銅cmos xs到絕緣硅、硅鍺合金以及low - k絕緣體，所有這些都可以在300mm的晶片上生產。
  4. These problems boost the study of high - k materials as the alternatives of sio2 gate dielectrics. among all high - k gate dielectric materials, hafnium oxide ( hfo2 ) is being extensively investigated as one of the most promising candidate materials due to its superior thermal stability with poly - si, biggish constant and reasonable band alignment. our researches focus on hfo2 dielectrics

    高k柵介質材料已經被廣泛地研究來替代sio _ 2 ，以降低柵泄漏電流和改善可靠性，其中， hfo _ 2由於其較大的介電常數、較大的禁帶寬度、與si的導帶和價帶較大的偏置、以及與si的高的熱力學穩定性等特徵，被認為是最有希望的替代sio _ 2的柵介質材料之一。
  5. With the continued scaling - down of mosfet, the ultra - thin gate oxide causes some serious problems of devices. the ultra - thin sio2 dielectrics cause significant leakage current, consequently increases standby power of device. meanwhile, the reliability of gate dielectrics is also degraded

    當mosfet器件按比例縮小到70nm尺寸以下時，傳統的sio _ 2柵介質的厚度將需要在1 . 5nm以下，如此薄的sio _ 2層產生的柵泄漏電流會由於顯著的量子直接隧穿效應而變得不可接受，器件可靠性也成為一個嚴重的問題。
  6. Conditions of use of liquid dielectrics. first part : fire risks

    液體電介質的使用條件.第一部分:火險
  7. Standard test method for permittivity dielectric constant and dissipation factor of solid ceramic dielectrics at frequencies to 10 mhz and temperatures to 500 c

    頻率為10mhz溫度至500的固體陶瓷電介質電容率
  8. Based on the breakdown model of blemish dielectrics, the dielectrics state of power cable can be monitored using measures of the loss current from the shield of power cable that is sparked by the disturbing source in power network

    藉助于含有缺陷的絕緣擊穿模型，利用電力系統固有的干擾作為信號源，直接測量電纜屏蔽層的損耗電流，監測電力電纜絕緣運行狀態。
  9. A breakdown model of dielectrics, which exists some blemish inside or on the surface, such as hole, impurity and heave at which breakdown probability is larger than that at other points, was established

    建立了含有缺陷點的絕緣介質擊穿模型，指出電纜絕緣層內部及表面存在空洞、夾雜物和隆凸不平是缺陷產生的內在因素，缺陷點處的擊穿概率較大。
  10. Simulation results show that the fractal dimension of loss current is more than one when water tree occurs inside the dielectrics of power cable, and the operation state of power cable can be estimated from the fractal dimension of loss current

    模擬結果表明，當絕緣介質樹化時，損耗電流的分形維數大於1 ，分形維數可作為判定電纜絕緣狀態的依據。
  11. Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit

    日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。
  12. With the research on hfoxny gate dielectrics, it can reduces leakage current and increase crystallizing point ; our research can help to realize the leakage current mechanism and silc effect of hfo2, futher more it can offer us direction on optimize the fabrication process

    結果表明，與hfo :相比，氮化的hfo :具有小的漏電流。我們的研究結果有助於進一步了解hro :柵介質的泄漏電流機制和silc效應的特徵，為進一步優化hfo :高k柵介質的制備工藝提供指導。
  13. We researched fabrication at different asputtering and annealing atmosphere, the different process conduced different electrical properties. we can conclude a higher annealing temperature and higher proportion of o2 during reactive sputtering favors the improvement of electrical performances of hfo2 dielectrics ; 4. the analysis of i - v curves of these devices displays different leakage current mechanism under different area of applied bias - voltage ; as to silc. there are different leakage current mechanism at influence of sil. c ; 5

    研究表明，在優化工藝條件下制備的hfo _ 2介質層中，襯底注入條件下由於其較低的體和界面缺陷密度，漏電流的輸運機制主要以schottky發射為主; silc效應導致hfoz / si界面缺陷態的增加，從而使得襯底注入條件下，柵泄漏電流機制不僅有schottky發射還有f一p發射機制起主要作用; 5 ）初步研究了氮化的hfo : （ hroxny ）柵介質的電學特徵。
  14. Generally, the property of dielectrics will deteriorate and even breakdown under the action of the dc or ac electric field for some time

    一般來講，介電材料無論是在直流電場中，還是在交變電場中使用一段時間后，總會出現介電性能的降低甚至擊穿等不同程度的破壞。
  15. For most transparent dielectrics there is so little visible light absorbed, that this k value can be ignored and things get easier

    對于多數透明材質而言，光很少被吸收，因此這個消光系數被忽略，事情也變得簡單了。
  16. Test method for permittivity dielectric constant and dissipation factor of solid ceramic dielectrics at frequencies to 10 mhz and temperature to 500 deg c

    頻率10 mhz溫度500固體陶磁介質的漏電率和耗散因子測定方法
  17. Classification of liquid dielectrics according to their fire behaviour

    液體電介質根據燃燒性能的分類
  18. Method of sampling liquid dielectrics

    液體電介質取樣方法
  19. The optical bloch equation of a v - type three - level atom embedded in dielectrics is derived. because of the vacuum anisotropy induced by the presence of the dielectrics, quantum interference between the two decay channels can still be generated in spite of the two dipole moments of the atom are orthogonal to each other

    推導了介質中一個v型三能級原子的光學bloch方程，由於介質所誘導的真空的各向異性，即使此v型三能級原子的兩電偶極矩互相垂直，依然能夠產生量子干涉。
  20. Measurement of the dielectric parameters of high - loss dielectrics

    高損耗介電材料的介電參數測量方法研究
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