diffusion and ion implantation 中文意思是什麼

diffusion and ion implantation 解釋
雜質植入
  • diffusion : n. 1. 散布，發散。2. 傳播，普及。3. 冗長。4. 【化學】滲濾。5. 【物理學】擴散，漫射。
  • and : n. 1. 附加條件。2. 〈常 pl. 〉附加細節。
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • implantation : n. 1. 種植。2. 插入；灌輸，鼓吹。3. 【醫學】皮下注射。
  1. The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )

    我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。
  2. In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion

    本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。
  3. Some previous experiments have showed that cavities had more efficient gettering than p - diffusion, mechanical damage and ion implantation. most of studies about cavities gettering are concentrated on the peculiarity of cavities gettering metal impurities intentionally into silicon wafer from the viewpoint of basic study. this technique especially applied to low - contamination process, how ever, has not been carefully studied, which should be important to the semiconductor manufacturing

    而過去的工作多集中在從基礎研究的角度研究氦微孔對有意摻入金屬雜質的矽片的吸除特性，對無意引入的低濃度金屬雜質的器件吸雜效果的研究卻非常少，這方面的研究是氦微孔技術走向實際應用的必經之路。
  4. Contribution on chapter 6 ( diffusion ) and chapter 7 ( ion implantation ) of “ fundamentals of semiconductor fabrication ” textbook by g. s. may and s. m. sze, publication in 2003, p105 - 143, wiley

    修正第13章，半導體元件物理與製作技術，施敏原著、黃調元譯， 91年9月出版，交通大學。
分享友人
分享到 Line

分享到臉書