dislocation cell 中文意思是什麼
dislocation cell
解釋
位錯胞- dislocation : n. 1. 【醫學】脫位，脫臼；離位，轉位，位移。2. 【地質學；地理學】斷層，斷錯；【物理學】位錯。3. 混亂，打亂。
- cell : n 1 小室，單室；隔間，艙；〈詩〉茅舍；（單個的）蜂窩，蜂房。2 〈詩〉墓穴，墓。3 （大修道院附屬的...
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In the relatively high dislocation density areas, dislocations form the relatively small cellular structure and there is few isolated dislocation within each cellular structure. here the profile of c concentration in the dimension of a cellular structure is " u " - shaped. the cell diameter increases as the dislocation density decreases, dislocations form the relatively large cellular structure and there are a few isolated dislocations within each cellular structure
發現晶片中位錯密度和分佈嚴重影響碳的微區分佈，高密度位錯區，位錯形成較小的胞狀結構，胞內無孤立位錯，碳在單個胞內呈u型分佈；較低密度位錯區，胞狀結構直徑較大，胞內存在孤立位錯，碳在單個胞內呈w型分佈。 -
In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best
計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。 -
Damage evolution law study by micro - parameter of dislocation cell and positron annihilation life
用位錯胞及正電子湮沒壽命為參量的損傷演變律 -
In undoped lec si - gaas single crystal, the density of dislocation is usually very high and the dislocations easily form the cellular structure. the formation and distribution of other impurities and point defects are closely correlative with the cell structure and then result in the non - uniformity distribution of electrical and optical characteristic of gaas material
而非摻lecsi - gaas中的高密度位錯，往往形成胞狀結構；其它雜質和點缺陷的形成與分佈與該結構密切相關，並導致gaas材料電學和光學特性的不均勻。
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