dislocation density 中文意思是什麼

dislocation density 解釋
差排密度
  • dislocation : n. 1. 【醫學】脫位，脫臼；離位，轉位，位移。2. 【地質學；地理學】斷層，斷錯；【物理學】位錯。3. 混亂，打亂。
  • density : n. 1. 稠密；濃厚。2. 【物理學】濃度；密度；比重。3. 愚鈍，昏庸。
  1. Gallium arsenide single crystal - determination of dislocation density

    砷化鎵單晶位錯密度的測量方法
  2. With the development of the growth skill craft of gaas single crystal, the density of el2 can be controlled in 1 - 5 1016 / cm ~ 3 and its distribution becomes more uniform in gaas wafer too, so the distribution of carbon seems to be more important to determine the uniformity of electrical resistivity of si - gaas material. so it seems to be very important to study the distribution of carbon and the effect of dislocation on the distribution of carbon

    隨著單晶生長技術的發展，通過退火，由於si - gaas中理論化學配比偏離， el2濃度可被控制在1 1 . 5 10 ~ （ 16 ） cm ~ （ - 3 ） ，且分佈均勻。因此碳的分佈就成為決定si - gaas材料電阻率均勻性的一個關鍵因素。所以，研究碳微區均勻性就顯得非常重要。
  3. We studied the effect of laser quenching ( harden by phase transformation ) on some representative mould steels. through measuring the rigidity on the surface of samples treated by laser heat treatment, and through photographing microstructures of the steel surface, we find many reasons attribute to high hardness. these reasons include ultra - fine grains, high density dislocation and more content of carbon in martensite

    我們研究的是激光淬火對幾種典型模具鋼的作用，通過對熱處理后的試樣的硬度分佈的測定，用金相和電鏡觀察金相組織的變化，認為激光熱處理產生高硬度的原因是晶粒細化、高的位錯密度和高的馬氏體含量。
  4. Germanium monocrystal - inspection of dislocation etch pit density

    鍺單晶位錯腐蝕坑密度測量方法
  5. In the relatively high dislocation density areas, dislocations form the relatively small cellular structure and there is few isolated dislocation within each cellular structure. here the profile of c concentration in the dimension of a cellular structure is " u " - shaped. the cell diameter increases as the dislocation density decreases, dislocations form the relatively large cellular structure and there are a few isolated dislocations within each cellular structure

    發現晶片中位錯密度和分佈嚴重影響碳的微區分佈，高密度位錯區，位錯形成較小的胞狀結構，胞內無孤立位錯，碳在單個胞內呈u型分佈；較低密度位錯區，胞狀結構直徑較大，胞內存在孤立位錯，碳在單個胞內呈w型分佈。
  6. The defect and interface in sapphire and gan were observed by afm. we found that when the dislocation density in sapphire was lower thanl05 / cm2, the dislocation density in gan was 108 ~ 109 / cm2and not linear with the dislocation in sapphire. the impurity of mo in sapphire and gan was measured by sem xps epma and uvf we found the mo content in sapphire was 10 - 4, and the mo content in gan was lower than ppm. so it was concluded that low - cost mo crucible is viable

    用掃描電鏡（ sem ） 、 xps 、電子探針和紫外熒光光譜儀測量了藍寶石襯底和gan外延層中的mo雜質的含量，發現藍寶石襯底中含有mo雜質，含量約為10 ~ （ - 4 ） （質量含量） ；而在外延層gan中沒有檢測到mo雜質，即mo雜質含量小於ppm級。
  7. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  8. In undoped lec si - gaas single crystal, the density of dislocation is usually very high and the dislocations easily form the cellular structure. the formation and distribution of other impurities and point defects are closely correlative with the cell structure and then result in the non - uniformity distribution of electrical and optical characteristic of gaas material

    而非摻lecsi - gaas中的高密度位錯，往往形成胞狀結構；其它雜質和點缺陷的形成與分佈與該結構密切相關，並導致gaas材料電學和光學特性的不均勻。
  9. There exists a strong correlation between initial surface morphology prior to ht growth and ht gan growth mechanism and eventual threading dislocation density in epilayers

    發現高溫生長前樣品的表面狀態對隨後生長的gan生長機制及最終外延層中的位錯密度有很大影響。
  10. The study indicated that intensity of materials was enhanced because tic and zrc diffused in cu matrix, and counterworked the motion of dislocation. the cu - based composite materials that prepared in situ synthesis have more fine capability. the upper density was gained when pressing pressure was increasing, and sintering temperature was 800

    研究表明， zrc 、 tic在銅基體中形成彌散強化，阻礙位錯移動，提高材料的強度；用原位合成的cu - 50 tic粉末做原料制備的銅基復合材料具有相對優良的綜合性能；提高壓制壓強，在800燒結可得到較高的緻密度，而材料緻密度的提高會提高材料的各項性能。
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