dopant 中文意思是什麼

dopant 解釋
n. 名詞 【物理學】摻雜劑，摻雜物。

  1. Typical of the dopant chemistry is the reaction for arsine, which is depicted with the deposition process in fig. 9.

    砷化三氫的反應是典型的摻雜化學反應，圖9顯示了該反應的淀積過程。
  2. In contrast to the cvd process, mbe does not require the extensive safety precautions, although solid arsenic dopant must be handled carefully.

    和化學氣相淀積工藝相反，雖然在操作中對于固體砷還是必須非常小心掌握，但是，分子束外延不需要龐大的安定保險裝置。
  3. Uses : as an activator of phosphor and dopant of garnet

    用途：用於熒光粉的活化劑和柘榴石的添加劑。
  4. Improvement of thermal stability of pd - al2o3 membranes by the dopant of lanthana

    3復合催化膜的熱穩定性
  5. All in all, ga dopant is superior to other p - type dopants

    總之， ca具有其它p型雜質所不可比擬的優越性。
  6. Influence of transition elements dopant on the photocatalytic activities of nanometer tio

    2光催化劑性能的影響
  7. Effect of fe3 dopant on absorption spectra and photo catalysis activity of titanium dioxide film

    對二氧化鈦薄膜吸收光譜及光催化活性的影響
  8. Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon

    摻硼磣磷硅單晶電阻率與摻雜劑濃度換算規程
  9. As a result, the electric conductivity of mg2si was increased with the increasing of the dopant

    所以能夠大幅度提高mg一si基熱電體系的整體熱電性能。
  10. In the pfb5 and pff5 led, we also find the energy shift from host to dopant intra - chain

    在聚合物led中，我們也發現了從在鏈內的主體到客體染料的能量轉移。
  11. The oxide and reduce potential and the dopant concentration. the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2, maybe that loading v2o5 would accelerate the electron captured and charge transferring, change the samp1e surface hydrophilic and absorption

    納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。
  12. But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed

    而晶粒生長、晶粒半導化和晶界絕緣化受到多種因素的影響，諸如雜質的種類和含量、燒成溫度等，因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響，並藉助于sem分析對srtio _ 3基雙功能陶瓷的微觀結構進行了分析。
  13. Additional contributions to the refractive index are expected to come from the dopant(6. 8)as well as from the electro-optic effect.

    預料其它對折射率的影響來自摻雜劑以及電光效應。
  14. The fabrication parameters were preliminarily optimized. the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ). the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )

    闡述了摻硼金剛石膜的制備工藝，研究了摻硼金剛石膜成核和生長的影響因素，初步優化了沉積摻硼金剛石膜工藝參數，同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。
  15. The bandgap is found to broaden with increasing dopant concentration, and it is found that doping with al has the effect of shifting the optical absorption to the shorter wavelength, with both cases being attributed to the burstein - moss shift. we report a study on the fabrication and characterization of ultraviolet photodetectors based on zno : al films. using sol - gel technique, highly c - axis oriented zno films with 5 mol. %

    為了研究zno : al薄膜在紫外光探測方面的性能，我們採用溶膠-凝膠旋塗法在si襯底上生長出具有高度c軸取向的zno : al薄膜，摻al濃度為5mol . % ，並以此作為有源區成功制備出了au / zno : al / au光電導型紫外探測器的原型器件，並對其i - v特性、紫外光響應和光致發光等方面的性能進行了研究。
  16. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  17. The thermoelectric properties of the samples greatly depend on the doping elements and constituent concentration. the sample with la - dopant shows better thermoelectric performances than those with other three dopants. it should be pointed out that there exists an appropriate range of doping values to improve the thermoelectric properties of the samples

    這四種摻雜劑都不同程度的提高了材料的熱電性能，但只有摻la能夠很好的改善材料的性能，而且摻雜量不是越大越好，而是表現出有一個最優摻雜的限度。
  18. Begin with the comparation of two widely used methods producing the strontium titanate, the oxalate decomposition method shows its advantage hi the microstructure and future performance. the effect of caco3 is studied, and so is the effect of the donor dopant, such as nb2o5, y2o3 and la2o3. the dopant of tio2 is also considered, which involve ti / sr ratio, sintering temperature, oxygen partial pressure, donor dopant, grain growth and future electric performance

    從對比草酸鹽分解法和固相合成法這兩種制備srtio _ 3主晶相的方法開始，在予合成料的制備過程中分析了施主nb _ 2o _ 5 、 y _ 2o _ 3 、 la _ 2o _ 3以及caco _ 3所產生的影響；在tio _ 2摻雜的問題上，綜合考慮了ti / sr比、燒結溫度、氧分壓、施主摻雜、晶粒的微觀生長與成瓷后的元件宏觀電性能等之間的相互關系。
  19. Wang yongqian, liao xianbo, ma zhixun, et al. solid - phase crystallization and dopant activation of amorphous silicon films by pulsed rapid thermal annealing [ j ]. applied surface science, 1998 135 : 205

    薛清，郁偉中，黃遠明.利用快速退火法從非晶硅薄膜中生長納米硅晶粒[ j ] .物理實驗， 200222 （ 8 ） : 17
  20. The cooler and temperature controller of nd : yap rod are improved and the lower dopant concentration of the nd : yap ( 0. 6 at. % )

    除了改進冷卻控溫系統外，選擇摻雜濃度較低的激光晶體，有利於高效散熱，得到更穩定的激光輸出。
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