doped chemical 中文意思是什麼

doped chemical 解釋
摻雜劑
  • doped : 摻雜的摻了添加劑的
  • chemical : adj 化學的，化學作用的；應用化學的，用化學方法獲得的。n 〈常 pl 〉化學製品；藥品。 fine chemicals...
  1. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  2. Particularly, cr4 + - doped crystals as passive q - switch ( saturable absorber ) have got extensive attention, such as cr4 + : yag ， cr4 + : gsgg ， cr4 + : mg2sio4 and cr4 + : yso, which have the advantages of wild absorption band, good saturable absorption, long restored time, good photo - chemical stability, no fading, good thermal conductivity and high damage threshold

    特別是近年來，摻cr4 +離子的各種晶體如cr4 + : yag ， cr4 + : gsgg ， cr4 + : mg2sio4和cr4 + : yso等作為被動調q開關受到了廣泛的關注。它們具有很寬的吸收帶和良好的飽和吸收性質，恢復時間較長，光化學性質穩定，無退化現象，熱導性好，損傷閾值高。
  3. Al - doped zno ( azo ) thin films are emerging as an alternative potential candidate for ito ( sn - doped in2o3 ) films recently not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, infrared reflectance and low d. c. resistivity ) to ito films, but also because of their higher thermal and chemical stability under the exposure to hydrogen plasma than ito

    Al摻雜的zno薄膜，由於具有與ito （ in _ 2o _ 3中適量摻雜sn ）薄膜相比擬的對可見光的高透過率和高電導，又因其在氫等離子體中的高穩定性等優點，已成為替代ito透明導電薄膜的研究熱點。
  4. In recent years, al - doped zno ( azo ) thin films has become a hot issue of transparent conductive thin films field and preferred materials instead of ito films not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, low electrical resistivity ) to ito films, but also because of their lower price and higher thermal and chemical stability under the exposure to hydrogen plasma than ito

    近年來，由於al摻雜的zno薄膜（ azo ）具有與ito薄膜相比擬的光電性能（可見光區高透射率和低電阻率） ，又因其價格較低以及在氫等離子體中的高穩定性等優點，已經成為替代昂貴的ito薄膜的首選材料和當前透明導電薄膜領域的研究熱點之一。
  5. Antimony doped tin oxide ( ato ) and indium tin oxide ( ito ) thin films have been prepared by a sol - gel process using inorganic metal salts as precursors. the effects of heat - treatment atmosphere, temperature, time and dopant content on the electrical and optical properties of thin films were investigated. the fine patternings of the ato films were fabricated by chemical modification and sol - gel method

    本文以無機鹽為出發原料，採用溶膠?凝膠法制備了光學和電學性能較為優良的摻銻二氧化錫（ ato ）薄膜和摻錫氧化銦（ ito ）薄膜，進一步研究了熱處理氣氛、溫度、時間、摻雜量對薄膜電學及光學性能的影響。
  6. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  7. Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度
  8. L shuchen ( condensd matter physics ) directed by prof. huang shihua preparation and room temperature emission of nanocrystalline zno, colloidal zno solutions and rare earth doped nanocrystalline zno are presented in the present paper, including the near infrared and upconversion luminescence. the main contents and the important results are as following : nanocrystals zno are prepared by chemical precipitation

    呂樹臣（凝聚態物理專業）指導教師:黃世華研究員本論文主要研究納米晶zno粉體、膠體及納米晶zno : re材料的制備和室溫發射現象，包括近紅外發射和上轉換發射現象。
  9. But there are still several problems concerning the stability and reproducibility of device fabrication. the heavily born doped p - type diamond films synthesized by hot filament chemical vapor deposition with b ( ch3 ) 3 as boron source substituted the metal electrode aluminum

    本文還利用熱燈絲化學汽相沉積（ hfcvd ）法，採用硼酸三甲酯b （ ch3 ） 3為硼源制備了重摻雜p型金剛石膜，作為lppp / alq異質結增強型發光器的電極。
  10. Boron - doped silicon nanowires grown by plasma - enhanced chemical vapor deposition

    等離子體增強化學氣相沉積法實現硅納米線摻硼
  11. Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades

    純的或摻雜的氧化鋯薄膜因其高熔點、低熱導率、高離子導電能力和高溫化學穩定性而受到相當的重視，而且氧化鋯外延薄膜在金屬氧化物半導體（ mos ） 、高溫超導帶材等領域的應用受到越來越多的關注。
  12. 3. pani nanofibrils were synthesized for the first time by using chemical oxidative polymerization under hydrothermal conditions. the effects of concentration of aniline, doped acid and the reaction time on the morphology of pani were researched

    3 .在水熱條件下通過化學直接氧化的方法得到聚苯胺納米纖維，討論了苯胺的濃度，摻雜酸和濃度以及水熱時間對聚苯胺納米纖維生成的影響。
  13. This part emphasizes the synthesis of nanoarrays, aiming at controlling the size and distance of nanocrystallites using calixarene derivatives by altering the size, length and chemical structure of the organic molecules ; 2. this part emphasizes in situ synthesis strategy for fabrication of polymer network of zns based nanopowder, aiming at size controls, coating and preventing agglomeration following " one - pot " synthesis ; this method fits to low cost, large scale production ; 3. according to development in zno nanomaterials, we first report on the synthesis, characterization of amorphous zno, aiming at describing the principles and approaches of synthesis techniques, optical properties, spatial structure and doped effect ; the amorphous zno displays cage - like structure, showing a strong ultraviolet emission while the visible emission is nearly fully quenched, a potential uv - emission material ; 4

    本論文以量子結構自組裝為出發點，提出利用杯芳烴及其衍生物的化學受限反應實現尺寸可調半導體納米粒子自組裝；提出有機聚合網路原位組裝zns基納米熒光粉方法，把熒光粉的納米化、包敷、防團聚在「一鍋」反應中完成，適于低成本，批量生產；根據當前zno的研究情況，我們首次合成了非晶zno ，研究了它的光學性質，確定了它的結構，並對其摻雜進行了初步的研究，非晶zno表現出強的深紫外發光特性，而可見發射非常弱，是一種有巨大潛在應用價值的深紫外發光材料；利用非晶zno的亞穩特性，對晶化過程中非晶zno納米晶zno三維受限量子結構特性，界面特性進行了深入的研究；利用固相熱分解一般受擴散控制特性，實現了尺寸可控的zno三維量子結構的自組裝；利用非晶zno的高度分散性，容易均勻成膜特性，實現了非晶籽晶誘導低溫液相外延自組裝生長高取向zno晶體薄膜。
  14. Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition. the p - type gan was achieved with high hole concentration 8. 2810

    應用mg離子注入mocvd法生長摻雜mg的gan中，在經過800 ， 1h的退火后，獲得高空穴載流子濃度8 . 2810
  15. Cubic boron nitride ( c - bn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc. because c - bn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ c - bn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ c - bn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  16. Cubic boron nitride ( cbn ) thin films have significant and potential technological application prospect in cutting tools, electronic and optical devices, etc., because cbn possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n - and p - type doped semiconductors

    立方氮化硼（ cbn ）具有優異的物理化學性質，如僅次於金剛石的硬度、高溫下強的抗氧化能力、不易與鐵族金屬反應、可n型摻雜也可p型摻雜成為半導體等，立方氮化硼（ cbn ）薄膜在切削刀具、電子和光學器件等方面有著潛在的重要應用前景。
  17. It is found that dimerization of doped mpc molecules is mainly affected by three factors. one is the structure characteristic of mpc molecule. the other is the change of chemical environment, including the decrease of ethanol / water ratio and quantity of remaining solvent, which promotes dimerization

    因此，可以調整溶膠一凝膠工藝參數，通過對基質的設計實現對酞著二聚行為的調控，強化凝膠孔的「籠化， ，效應以有效抑制二聚。
  18. Surface chemical analysis - secondary - ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質光譜測定法.採用均勻塗料的硅中硼原子濃度測定
  19. Improved cycling performance and enhanced thermal stability are observed for ti - doped cathode materials. these positive effects are attributed to the changes of cationic distribution and chemical bonds in the structure of ti - doped materials

    欽的摻雜能夠在損失部分容量的情況下，改善和提高lini08coo . 20 :電極材料的充放電循環性能和熱穩定性。
  20. Owing to its optoelectronic and chemical properties, cdte is an ideal absorber material for high - efficiency, low - cost polycrystalline thin film. the thesis has investigated the structure, figure and optoelectronic characteristics of cdte polycrystalline thin films, the performance of doped cdte, and the influence of their deposition and anneal process

    Cdte具有良好的光電學性質和化學性質，因此成為制備高效率、低成本的多晶薄膜太陽電池理想的吸收層材料。本文針對cdte薄膜，研究了其制備工藝、摻雜和后處理條件對薄膜結構、形貌和光電學性質的影響。
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