doping ratio 中文意思是什麼
doping ratio
解釋
摻雜劑比率-
Its oxygen - sensitivity is related to its oxidation and reduction process and non - stoichiometric ratio. in la _ 2nio _ 4 + system with excess oxygen, the conductivity is in proportion to o21 / 6. the effect of doping on a and b site have been studied in this paper
其本身的氧化還原過程和非化學計量是其氧敏性的根源，在氧過剩的la _ 2nio _ 4 +系統中載流子濃度與氧分壓的1 / 6次方成正比。 -
Cu2 +. cr3 + were selected with different weight ratio doping in tio2 to study the photocatalyst modifying in this paper. the experiments of degradation methylene blue showed that the doping results were quantitatively correlated with the transition metal ion radii. their electronic configuration
對次甲基藍的降解實驗表明摻雜離子的修飾效果與過渡金屬離子的離子半徑、外圍電子構型、氧化還原電位和離子濃度等因素有關，質量比為0 . 5的fe ~ （ 3 + ）摻雜對次甲基藍的降解效率最高。 -
The appropriate calcinations temperature is about 700, and the tetragonal sno2 phase crystal structure of the particles remained unchanged when sb was doped to it. as the calcinations temperature increasing and the calcinations time prolong, the size of particles grows and the crystallization tend to be complete. study on the electrical properties of ato powders prepared by hydrothermal synthesis was performed in - depth, the most optimal electrical properties are obtained at doping ratio of 11 percent
水熱法制備的ato納米粉體在熱處理溫度700左右較為適宜，銻的摻雜並未改變粉體的四方相金紅石結構，隨銻摻雜量的增加，粉體的粒度變小；隨熱處理溫度的升高和熱處理時間的延長， ato粉體的粒度增大，晶體結構趨于完整。 -
When mechanical doping 5 % co, the discharge specific capacity is 225mah / g, the ratio of active material utilization is 78 %. the addition of zn can prevent the swelling of nickel electrode and prolong the cyclic life, decrease the existence of y - niooh when over - charged
隨著co摻雜量的增加，鎳電極的放電比容量明顯提高，機械混合摻雜5 co時鎳電極的放電比容量為225mah g ，活性物質的利用率達到78 ，循環性能比較穩定。 -
Such achievements have resulted in a good significance for guiding both the research on superconductivity of doping mgb2 and the researchers in their selection of doping elements and doping ratio
這些結果對摻雜二硼化鎂超導電性的研究工作及今後實驗工作者摻雜元素和摻雜比例的選取都有很好的指導意義 -
The transmittance of zno thin films with suitable doping molar ratio is above 80 % in the uv - visible range. the films obtained in this work show to have a high c - axis orientation, smooth and smooth morphology, high electrical resisitivity and high transparency, which can meet the requirements for piezo - electrical devices
本論文通過對li ： zno以及（ mg人中znot4膜的分析研究，深入地探討了旋塗方式、熱處理溫度、摻雜濃度和熱處理方式等對zno膜結晶取向的影響以及電學和光學性能的影響關系等，對z ； 。 -
The effects of doping ratio, calcinations temperature and calcinations time on the structure and the particle size have been comprehensively studied
系統研究了摻雜比，熱處理溫度，熱處理時間等制備工藝過程對ato納米粉體相組成和粉體粒度的影響。 -
Then we grew the material with different active layer growth temperature, different v / ratio, different doping concentration and form. after that, we tested these materials by photoluminescence ( pl ) technology, and got the best growth condition according to the results of photoluminescence spectra. our result was that the active layer growth temperature was 700, v / ratio was 60, waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm, p - type doping with dmzn from 90sccm to 490sccm )
然後在不同的有源區生長溫度、 /比、摻雜方式及濃度情況下對激光器材料進行外延生長，並利用光熒光（ pl ）技術對不同生長條件下外延材料的光致發光特性進行了測試對比，結果表明在下列條件下生長出來的材料具有更好的光學和電學性能：有源區生長溫度在700 、波導層/比選擇為60 、 n型波導漸變摻雜190sccm - 590sccm的sih _ 4 、 p型波導漸變摻雜90sccm - 490sccm的dmzn 。 -
Using sncl4 - 5h2o and sbcl3 as precursors, antimony doped tin oxide particles with good electrical properties have been prepared by hydrothermal synthesis. the optimal conditions of this synthesis process were as following : doping ratio was 11 % ; reaction temperature was 180 ; reaction time was 2h ; the temperature and time of calcinations is 700 and 2h. the size of ato particles obtained is about 20nm, and its resistance can reach 0. 2, under 0. 2mpa pressure
在摻雜濃度為11 ，水熱反應溫度為180 ，反應壓力1mpa ，反應時間2h ，熱處理溫度為700 ，熱處理時間2h的實驗條件下制備的ato粉體，性能達到最佳，晶粒度在20個nm左右，在0 . 2mpa壓力下粉體電阻值為0 . 2 。
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