effects circuit 中文意思是什麼
effects circuit
解釋
音響效果電路-
To comply with the low - power - consumption application, low - voltage design is taken into account by using some special circuit structures. besides there are many nonideal effects in pll which degrade the loop performance badly, some efficient solutions have been put forward to suppress the undesired ones
此外論文還討論了若干制約環路性能的非理想效應，並在借鑒國外相關理論成果的基礎上，成功設計了克服這類效應的一些改進電路。 -
The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward
介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。 -
Low noise amplifier ( lna ) is widely used in front end of a received set of mobile communication 、 wireless radio 、 blueteech technology and so on 。 the active device is the core of the circuit and has significant effects on the whole equipment, therefore, the design of the active device is vital in lna
微波低噪聲放大器（ lna ）廣泛應用於移動通訊、無線電、藍牙技術等的rf前端。 lna中的有源器件是整個電路的核心，對整個放大器電路的性能有著重要的影響，因此有源器件的設計是lna的關鍵技術之一。 -
The capacitance offset averaging network is used in the distributed track - and - hold circuit block of the designed system. finally, according to the analysis on error effects in adc, the mathematics error model is simulated. furthermore, the input - output characteristics including input -
最後，基於對a / d轉換器系統中誤差的分析，對其誤差數學模型進行了模擬，得到了包含延遲、限幅、諧波失真等誤差的輸入輸出特性曲線。 -
All sorts of imperceptible factors making the system get worse, including the harmonic of the inverter and magnifying of dv / dt over long cable and the effects after applying the inverter. i applied the three - level main circuit structure to the esp system, so that the high voltage problems resulted by low endureing voltage can be solved, at the same time avoided the voltage distributing because of devices in series
為此本文將三電平主電路結構運用到潛油電泵變頻系統中，以解決由於當前器件耐壓較低而要求實現中高壓問題，同時避免了由於器件串聯而引起的均壓問題，具有諧波含量較二電平變頻器要低和體積較低壓單元串聯方式要小等特點。 -
Psychologist dr. robert sinclair and his former phd student carrie lavis recently conducted a series of four studies addressing the effects of experimentally induced happiness versus sadness on work productivity by asking the participants to build circuit boards
最近進行了一系列研究，用實驗方法誘導參與者心情愉快或悲觀憂愁，要他們製作電路板，最後了解其對工作效率的影響。 -
The stability of electric power system has been being focused for a long time toprevent a power system from losing synchronism after sudden fault ， researchers have done much work and got many accomplishments this paper applied the direct feedback linearization ( dfl ) technique on the power system ， a strong nonlinear system simulation results by matlab proved this method efficiency main works and results are as follows ： this paper compared some existing methods in excitation control ， fast valve control and coordinated control respectively, analyzed the developments and actuality of nonlinear control research in brief, illustrated why ransient stability could be greatly improved by using the fast valve control in chapter 3 ， indicated the importance of coordinated control farther this paper introduced the inverse system theory, based on which ， discussed the dfl theory, pointed out which had consistency with the inverse theory, expanded the dfl theory combined the idiographic model equations ， made which adapt to the model of a single machine - infinite bus power system this paper referenced abundance articles and educed a set of equations ， which could describe the dynamical process of excitation and fast valve control for synchronous generators in the equations ， there were several very important parameters of power system - - rotor angle ( ) ， rotor speed ( ) ， generator q axis voltage ( eq ) ， transient voltage ( e ' q ) ， active power ( pe ) ， mechanical input power ( pm ) ， valve opening ( ) ， generator terminal voltage ( vt ) ， based on the model ， nonlinear coordinated controller and terminal voltage optimal controller have been designed by using the expanded dfl theory and lq optimal control theory the simulation results showed that the controller could keep power system transiently stable under the effects of a symmetrical 3 - phase short circuit fault ， which achieved better postfault regulation compared with another two routine methods ， one is the proportion excitation controller and proportion fast valve controller, the other is the proportion excitation controller and the optimal fast valve controller, which could exert good performance when met 1ittle disturbance either
在介紹逆系統理論的基礎上，詳細介紹了dfl理論，通過比較闡明了dfl理論其本質是逆系統方法的一類，並結合具體課題推導出的模型方程將dfl理論進行了擴展，使之適應于電力系統這個強非線性對象。通過參考大量的書籍文獻推導出一套實用的可將大型汽輪發電機勵磁與汽門綜合起來進行控制的模型方程，此模型方程涵蓋了電力系統中特別引人注目的幾個量- -轉子角、轉子轉速、發電機q軸電勢eq 、暫態電勢e ' q 、有功功率pe 、機械功率pm 、汽門開度、機端電壓vt ，在此基礎上建立了實用的電力系統簡化的數學模型，並將擴展的dfl理論應用於此模型系統，結合線性二次型最優控制理論設計出大型汽輪發電機的非線性綜合控制器及機端電壓最優控制器，通過模擬實驗與採用常規的按電壓偏差進行調節的比例式勵磁控制器+汽門比例控制及採用常規的按電壓偏差進行調節的比例式勵磁調節器和基於二次型性能指標設計的最優快控汽門（考慮發電機的飽和因素）進行了對比，證實了採用此種控制器可以有效地提高電力系統的暫態穩定性，並且在電力系統遭受小干擾時同樣具有良好的調節性能。 -
On the base of studying imaging theory of lens, the imaging theory of laser confocal scanning microscopy was analyzed in detail in this paper, and the advancement of that the optical fiber was applied to the system was described ; on the base of completed the demonstration for whole project, the experiment scheme was designed ; the relationship between the main parameters of key devices and the resolution was deduced, and the requirements of coupling efficiency and vignetting effects to optical system was analyzed ; the design of optical system and the planar scanning controlling circuit was completed ; a new method was put forward to resolved the inherent non - liner scanning problem of the galvanometer scanner by using software liner controlling in circuit design, and the perfect planar scanning was realized ; at last the low noise, high multiple and non - distortion amplify circuit of photoelectric detector was completed
本文在透鏡成像理論的基礎上，系統、深入地分析了共焦掃描顯微成像的機理，論述了應用單模光纖的激光共焦掃描顯微成像系統的優點；進行了總體方案的論證，並設計確定了單模光纖激光共焦掃描顯微成像系統的總體方案；從理論上推導分析了解析度要求與試驗系統中相關器件主要參數之間的關系，分析了系統耦合效率和漸暈現象對光學系統的設計要求；完成了方案中光學系統和二維掃描控制電路的設計，並在電路設計中採用了用軟體解決檢流計式光學掃描器（振鏡）非線性問題的新方法，能夠實現較為理想的二維模擬掃描；完成了高增益、低噪聲和低失真的探測接收系統的設計和調試。 -
This thesis aims at discussing the model of manufacturing defects, the principles of soft and hard faults induced by manufacturing defects, the effects of soft fault on circuit reliability and yield and the relationship between yield loss and reliability decrease caused by manufacturing defects. the author ' s main contributions are as following : reliability and yield are two significant factors to semiconductor manufacture. based on the principles of the manufacturability engineering, the thesis discusses the effects of the manufacturing defect on the functional yield, parametric yield and the reliability for ics, and abstracts geometric models from actual chips
本文對集成電路製造缺陷模型、由製造缺陷導致的軟、硬故障的作用機理、軟故障對電路可靠性和成品率的影響以及由製造缺陷導致的電路成品率的損失和可靠性下降之間的關系進行了系統的研究，主要研究結果如下：可靠性和成品率是影響半導體生產的兩個主要因素，本文首先從集成電路的可製造性工程理論出發，討論了製造缺陷在影響集成電路功能成品率、參數成品率和可靠性方面的作用。 -
Short - circuit currents. calculation of effects. examples of calculation
短路電流.效應計算.計算範例 -
Short - circuit currents - calculation of effects - part 2 : examples of calculation
短路電流效應的計算.第2部分:計算舉例 -
Short - circuit currents - calculation of effects - definitions and calculation methods
短路電流效應計算.第1部分:定義和計算方法 -
The effects of the particle size and distribution of ink explosive on the critical explosion transfer performance of explosive logic circuit are studied
摘要研究了油墨炸藥的粒度大小、粒度分佈對爆炸邏輯網路臨界傳爆性能的影響。 -
The article consists of three parts mainly : the first part has described the method of detecting the faint signal, mainly include : detection technique of faint signal, principle of the optical fibre sensor, the little lose effects when optic fibre little curved, and the research of the stress sensor of optical fibre. the second part emphasizes on the design of the intelligent photoelectricity system, mainly tells the design of the circuit to process the faint photoelectricity signal, details the software and hardware design of intelligent photoelectricity system made of single chip microcontroller, led, man - machine interface, communication interface, etc. the third part is the network communication of the detection system, details the technology of single chip microcontroller how to group the network, and the communication between single the chip microcontroller system and the modem, and how to realize the data between the field and computer central exchanged through the existing public phone network
文章主要分為三部分：第一部分論述了微小信號的檢測方法，主要包括微小信號的檢測技術、光纖傳感器的原理、光纖微彎損耗效應及光纖應力傳感器的研製；第二部分重點講述了智能光電檢測系統的研製，主要講述了微弱光電信號調理電路的設計及由前（后）向通道、單片機、 led 、人機介面、通信介面等組成的智能光電系統的軟硬體的具體設計；第三部分為檢測系統的網路通信部分，具體闡述了單片機系統間的組網技術、單片機和modem之間的通信及通過現有的公用電話網路實現遠程監控的技術，實現現場檢測系統與橋梁測控中心的數據交換。 -
Along with silicon ulsi technology has seen an exponential improvement in virtually any figure of merit, as described by moore ’ s law ; the miniaturization of circuit elements down to the nanometer scale has resulted in structures which exhibt novel physical effects due to the emerging quantum mechanical nature of the electrons, the new devices take advantage of quantum mechanical phenomena that emerge on the nanometer scale, including the discreteness of electrons. laws of quantum mechanics and the limitations of fabrication may soon prevent further reduction in the size of today ’ s conventional field effect transistors ( fet ’ s )
隨著超大規模集成電路的的發展，半導體硅技術非常好地遵循moore定理發展，電子器件的特徵尺寸越來越小;數字集成電路的晶元的集成度越來越高，電子器件由微米級進入納米級，量子效應對器件工作的影響變的越來越重要，尺寸小於10nm將出現一些如庫侖阻塞等新特性。量子效應將抑制傳統晶體管fet繼續按照以前的規律繼續減小。在這種情況下，宏觀的器件理論將被替代，可能需要採用新概念的晶體管結構。 -
Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established
鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、柵線電極接觸電阻和少子壽命等測試系統。 -
Method for calculation of thermally permissible short - circuit currents, taking into account non - adiabatic heating effects
考慮非絕熱效應因素的允許熱短路電流的計算方法 -
Based on the model of 3 - mesh white circuit, the effects of each part of circuit on the system characteristic were analyzed
摘要文章基於3個單元的懷特電路模型，重點分析了迴路中各個部件對系統特性的影響。 -
With the software cadence, model establishment and parasitic parameter extraction are made on the main pcb lines of the proposed circuits. equivalent circuit models of common mode combined with differential mode current and noise simulation models are also established on full bridge switching - mode converters. study on the simulation of conducted interference noise is made with the software saber and the effects on the circuits " noise by the main parasitic parameters are also analyzed
在對全橋開關型變換器電路工作原理分析的基礎上，建立了全橋開關型變換器主要元器件的電磁干擾參數模型，利用cadence軟體對其pcb主要印製導線進行了建模分析和寄生參數的提取，得到了全橋開關型變換器傳導干擾的共模、差模噪聲電流等效電路模型以及噪聲模擬模型，並運用saber軟體進行了傳導性干擾噪聲的模擬研究，分析了主要寄生參數對電路噪聲的影響。 -
Finally, according to the mosfet ' s parameter degradation due to hot - carrier effects and different application environment of mos devices on analog and digital circuits, the circuit structures for hot - carrier immunity are proposed for digital applications by adding a schottky diode in series with the drain of the nmosfet suffered heavily from hot - carrier degradation.,
即在受熱載流子退化效應較嚴重的n mosfet漏極串聯一肖特基二極體的新型cmos數字電路結構和串聯一工作于線性區的常開n mosfet的mos模擬電路結構。經spice及電路可靠性模擬軟體bert2
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